TK4A50D
2013-11-01
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK4A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.)
High forward transfer admittance: |Yfs| = 1.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 4
Drain current Pulse (t = 1 ms)
(Note 1)
IDP 16
A
Drain power dissipation (Tc = 25°C) PD 30 W
Single pulse avalanche energy
(Note 2)
EAS 156 mJ
Avalanche current IAR 4 A
Repetitive avalanche energy (Note 3) EAR 3.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Note 1:Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17 mH, RG = 25 Ω, IAR = 4 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 4.17 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
1
3
2
Start of commercial production
2008-11
TK4A50D
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±30 V, VDS = 0 V ±1 μA
Drain cut-off current IDSS V
DS = 500 V, VGS = 0 V 10 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.4 4.4 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 2 A 1.7 2.0 Ω
Forward transfer admittance Yfs V
DS = 10 V, ID = 2 A 0.4 1.5 S
Input capacitance Ciss 380
Reverse transfer capacitance Crss 2.5
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
45
pF
Rise time tr 15
Turn-on time ton 35
Fall time tf 7
Switching time
Turn-off time toff
Duty 1%, tw = 10 μs 55
ns
Total gate charge Qg 9
Gate-source charge Qgs 5
Gate-drain charge Qgd
VDD 400 V, VGS = 10 V, ID = 4 A
4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR 4 A
Pulse drain reverse current (Note 1) IDRP 16 A
Forward voltage (diode) VDSF I
DR = 4 A, VGS = 0 V 1.7
V
Reverse recovery time trr 800 ns
Reverse recovery charge Qrr
IDR = 4 A, VGS = 0 V,
dIDR/dt = 100 A/μs 4.4 μC
Marking
Lot No.
K4A50D
Part No.
(or abbreviation code)
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
RL = 100 Ω
0 V
10 V
VGS
VDD 200 V
ID = 2 A VOUT
50 Ω
TK4A50D
2013-11-01
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10
0
0 2 4 6 8
2
10
Tc = 55 °C
25
100
4
6
8
8
6.4
4.8
3.2
0
0 24 40
VGS = 5.5 V
10
9
8
7.5
6.5
7
1.6
32
16
6
0
6
9
12
15
0
ID = 4 A
4 8 12 16 20
1
2
3
0.1
0.1 1 10
1
100
VGS = 10, 15 V
10
0.1
10
0.1 1
25
100
Tc = 55 °C
10
1
4
3.2
1.6
0.8
0
0 2 4 6 8 10
VGS = 5.5 V
6.5
6
7
9
10
2.4
7.5
VDS – VGS
ID – VDS
Yfs – ID
ID – VDS
FORWARD TRANSFER ADMITTANCE
Yfs (S)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)
ID – VGS
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
VDS = 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
VDS = 10 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
DRAIN-SOURCE VOLTAGE VDS (V)
RDS (ON) – ID
TK4A50D
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0 4 8
VDD = 100 V
VDS
VGS
400
200
12 16
500
400
300
200
100
0
20
16
12
8
4
0
VGS = 0 V
10
31
5
0
1
2
5
80 40 0 40 80 120 160
4
1
0.1
10
100
1000
10000
1 10
100
Ciss
Coss
Crss
0
0.1 0.3
1
100
0.6 0.9 1.2 1.5
10
160 40 0 40 80 120 80
6
3.6
2.4
1.2
0
ID = 1 A
2
4.8
4
RDS (ON) – Tc
Vth – Tc
IDR – VDS
PD – Tc
CAPACITANCE C (pF)
DRAIN POWER DISSIPATION
PD (W)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( Ω)
DRAIN REVERSE CURRENT
IDR (A)
GATE THRESHOLD VOLTAGE
Vth (V)
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)
GATE-SOURCE VOLTAGE VGS (V)
COMMON SOURCE
VGS = 10 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
COMMON SOURCE
ID = 4 A
Tc = 25°C
PULSE TEST
CAPACITANCE – VDS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50
0
0 40 80
120 160
10
20
30
40
CASE TEMPERATURE Tc (°C)
3
TK4A50D
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0.001
0.1
0.01
1
10
100
10 1000100
100 μs *
1 ms *
0.1
1
VDSS max
0.01
10μ
0.1
1
10
100μ 1m 10m 100m 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 4.17 °C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
15 V
15 V
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 17 mH
= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
rth – tw
EAS – Tch
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
PULSE WIDTH tw (s)
SAFE OPERATING AREA
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
ID max (pulsed) *
ID max (continuous)
DC operation
Tc = 25°C
AVALANCHE ENERGY
EAS (mJ)
CHANNEL TEMPEATURE (INITIAL)
Tch(°C)
TEST CIRCUIT WAVEFORM
180
140
100
60
20
0
25 50 75 100 125 150
160
120
80
40
TK4A50D
2013-11-01
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
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