30C02CH
No.7363-1/6
Applications
• Low-frequency Amplifi er, high-speed switching, small motor drive
Features
• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330mΩ[IC=0.7A, IB=35mA]
• Ultrasmall package facilitates miniaturization in end products
• Small ON-resistance (Ron)
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 40 V
Collector-to-Emitter Voltage VCEO 30 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC700 mA
Collector Current (Pulse) ICP 1.4 A
Collector Dissipation PCMounted on a ceramic board (600mm2×0.8mm) 700 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7015A-003
Ordering number : EN7363A
80812 TKIM/O2203 TSIM TA-100140
SANYO Semiconductors
DATA SHEET
30C02CH
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifi er Applications
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : CPH3
• JEITA, JEDEC : SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
3
2
1
CL
LOT No.
TL
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
21
3
0.95
30C02CH-TL-E
30C02CH
No.7363-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=30V, IE=0A 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA
DC Current Gain hFE VCE=2V, IC=50mA 300 800
Gain-Bandwidth Product fTVCE=10V, IC=50mA 540 MHz
Output Capacitance Cob VCB=10V, f=1MHz 3.3 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA 85 190 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=200mA, IB=10mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 40 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V
Turn-On Time ton See specifi ed Test Circuit. 35 ns
Storage Time tstg 255 ns
Fall Time tf40 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
30C02CH-TL-E CPH3 3,000pcs./reel Pb Free
VRRB
VCC=12VVBE= --5V
++
50Ω
INPUT
OUTPU
T
RL
220μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=300mA
0
0
500
400
300
700
600
200
200
100
0
300
400
200
800
700
600
500
100
500 1000
800 900100 300 400 600 700
IC -- VCE
IT05082
0 0.2 0.4 0.6 0.8 1.0
IC -- VBE
IT05083
IB=0
200μA
400μA
1mA
2mA
3mA
5mA
7mA
10mA
50mA
15mA
30mA 20mA
Ta=75
°
C
--25°C
25°C
VCE=2V
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
30C02CH
No.7363-3/6
IT05089
fT -- IC
100
1000
7
3
5
2
101.0 100
23 5723 57 1000
23 57
VCE=10V
Cob -- VCB
IT05088
2
10
1.0
7
3
5
1.0 10
23 5 23 57
f=1MHz
VCE(sat) -- ICVBE(sat) -- IC
IT05086 IT05087
10
100
1000
7
5
3
2
7
5
3
2
1.0 23 510 100 1000
723 5723 57
1.0
0.1
10
3
2
5
7
3
2
5
7
1.0 23 510 100 1000
723 5723 57
IC / IB=50 IC / IB=20
25°C
--25
°
C
Ta=75°C
75°C
Ta=--25°C
25°C
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product, fT -- MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
PC -- Ta
IT05091
0
800
600
700
500
300
400
100
200
020 40 60 80 100 120 140 160
Mounted on a ceramic board(600mm2✕0.8mm)
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron -- Ω
f=1MHz
0.1
0.1
IT06793
10
7
5
3
2
7
5
3
2
1.0
32 57 32 57
1.0 10
OUT
IN 1kΩ
1kΩ
IB
1.0 10 100 1000
3
257 3
257 3
257
1000
100
2
3
5
7
hFE -- IC
IT05084
VCE(sat) -- IC
IT05085
Ta=75°C
--25
°
C
25°C
VCE=2V
2
3
5
7
2
3
5
7
10
1.0
100
2
3
5
7
1000
1.0 23 5 10 100 1000
723 5
723 5
7
25
°
C
--25°C
Ta=75°C
IC / IB=20
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
30C02CH
No.7363-4/6
Embossed Taping Specifi cation
30C02CH-TL-E
30C02CH
No.7363-5/6
Outline Drawing Land Pattern Example
30C02CH-TL-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.6
2.4
0.95 0.95
1.4
30C02CH
PS No.7363-6/6
This catalog provides information as of August, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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