TLP785,TLP785F
2012-02-20
1
1
23
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TOSHIBA Photocoupler GaAs IRED & Photo−Transistor
TLP785,TLP785F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
• TLP785: 7.62mm pitch type DIP4
• TLP785F: 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL approved: UL1577, file No. E67349
• BSI under application: BS EN60065:2002
BS EN60950-1:2006
• SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
• Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
.
• Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 7.0mm(min) 8.0mm(min)
Clearance 7.0mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)
Inner creepage distance 4.0mm(min) 4.0mm(min)
Unit: mm
TOSHIBA 11-5L1
Weight: 0.32 g (typ.)
Unit: mm
TOSHIBA 11-5L102
Weight: 0.32g (typ.)
TLP785
Pin Configurations
(top view)
TLP785F
TLP785,TLP785F
2012-02-20
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Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
(Note 1)
Min Max
Marking of Classification
None 50 600 Blank
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
TLP785
Rank BLL 200 400 B
(Note 1): Ex. rank GB: TLP785 (GB)
(Note 2): Application type name for certification test, please use standard product type name, i. e.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
Pulse forward current (Note 3) IFP 1 A
Power dissipation PD 90 mW
Power dissipation derating ΔPD / °C −0.9 mW / °C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 80 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation (single circuit) PC 150 mW
Power dissipation derating
(Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Operating temperature range Topr −55 to 110 °C
Storage temperature range Tstg −55 to 125 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 240 mW
Total package power dissipation derating
(Ta ≥ 25°C) ΔPT / °C −2.4 mW / °C
Isolation voltage (Note 4) BVS 5000
Vrms
(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 3): 100 μs pulse, 100 Hz frequency
(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
TLP785,TLP785F
2012-02-20
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Recommended Operating Conditions (Note)
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C
(Note): Recommended operating conditions are given as a design guideline
to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively.
In developing designs using this product, please confirm
specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ― ― 10 μA
LED
Capacitance CT V = 0V, f = 1 MHz ― 30 ― pF
Collector−emitter
breakdown voltage V(BR) CEO I
C = 0.5 mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR) ECO I
E = 0.1 mA 7 ― ― V
VCE = 24 V ― 0.01 0.1 μA
Collector dark current ID(ICEO)
VCE = 24 V ,Ta = 85°C ― 0.6 50 μA
Detector
Capacitance
(collector to emitter) CCE V = 0V, f = 1 MHz ― 6 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
50 ― 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 ― 600
%
― 60 ―
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 ― ―
%
IC = 2.4 mA, IF = 8 mA ― ― 0.4
― 0.2 ―
Collector−emitter saturation
voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB ― ― 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0V, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V 1×1012 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
TLP785,TLP785F
2012-02-20
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Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
― 3 ―
μs
Turn−on time ton ― 1.5 ―
Storage time ts ― 25 ―
Turn−off time toff
RL = 1.9 kΩ (fig. 1)
VCC = 5 V, IF = 16 mA
― 50 ―
μs
Surface-Mount Lead Form Option
TOSHIBA 11-5L106
Weight: 0.31g (typ.)
TOSHIBA 11-5L107
Weight: 0.31g (typ.)
Unit: mm
TLP785(LF6) TLP785F(LF7) Unit: mm
IF
VCE
VCC
ton
4.5V
0.5V
toff
ts
VCC
VCE
IF
RL
(fig. 1): Switching time test circuit
TLP785,TLP785F
2012-02-20
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Option: Specifications for Embossed-Tape Packing; (TP6)/(TP7)
1. Applicable Package
Package Name Product Type
DIP4LF6 TLP785
DIP4LF7 TLP785F
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
classification is as below.
(Example)
TLP785 (BL−TP6,F
[[G]]/RoHS COMPATIBLE
Tape type
CTR Rank
Device name
(Example2)
TLP785F (BL−TP7,F
[[G]]/RoHS COMPATIBLE
Tape type
CTR Rank
Device name
3. Tape Dimensions
3.1 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 2.
Figure2 Device Orientation
3.2 Tape Packing Quantity:2000 devices per reel
3.3 Empty Device Recesses Are as Shown in Table 1.
Table1 Empty Device Recesses
Standard Remarks
Occurrences of 2 or more
successive empty device
recesses
0 Within any given 40-mm section of
tape, not including leader and trailer
Single empty device
recesses 6 devices (max.) per reel Not including leader and trailer
3.4 Start and End of Tape
The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.
Tape feed
P
1pin indication
TLP785,TLP785F
2012-02-20
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3.5 Tape Specification
[1] TLP785(TP6) / TLP785F(TP7)
(1)Tape material: Plastic
(2)Dimensions: The tape dimensions are as shown in Figure 3.
Figure 3 Tape Forms
TP6 Type TP7Type
A 5.1±0.1 5.05±0.1
B 10.6±0.1 12.35±0.1
W 16.0±0.3 24.0±0.3
F 7.5±0.1 11.5±0.1
T 4.2±0.15 4.4±0.1
W
F
A
T
B
φ1.5min
W
F
A
T
B
φ1.5min
Unit: mm
TLP785,TLP785F
2012-02-20
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3.6 Reel Specification
[1] TLP785(TP6) / TLP785F(TP7)
(1)Material: Plastic
(2)Dimensions: The reel dimensions are as shown in Figure 4.
Figure 4 Reel Forms
4. Packing
Two reels of photocouplers are packed in a shipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba company name.
6. Ordering Information
When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as
shown in the following example.
(Example)
TLP785(BL−TP6,F 4000pcs.
Quantity (must be a multiple of 4000)
[[G]]/RoHS COMPATIBLE
Tape type
CTR Rank
Device name
(Note): The order code may be suffixed with a letter or a digit.
Please contact your nearest Toshiba sales representative for more details.
W1
W2
φ
330 max
φ
100±1.5
φ
13.0±0.5
4.0±0.5
2.0±0.5
Unit: mm
TP6 Type TP7 Type
W1 16.5ｔｙｐ 24.4typ
W2 23max 30.4max
TLP785,TLP785F
2012-02-20
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Soldering and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
·Temperature profile example of lead (Pb) solders
·Temperature profile example of using lead (Pb)-free solders
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
Please preheat it at 150°C between 60 and 120 seconds.
Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin
may be heated at most once.
Time (s)
(°C)
240
210
160
60 to 120s less than 30s
Package surface temperature
140
Time (s)
(°C)
260
230
190
60 to 120s 30 to 50s
180
Package surface temperature
This profile is based on the devices
maximum heat resistance guaranteed value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type used
by the customer within the described profile.
This profile is based on the devices
maximum heat resistance guaranteed value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type used
by the customer within the described profile.
TLP785,TLP785F
2012-02-20
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2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
TLP785,TLP785F
2012-02-20
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EN60747-5-2 ‘Option: (D4)’
Attachment: Specification for EN60747-5-2 option: (D4)
Types: TLP785, TLP785F
Type designations for ‘option: (D4) ’, which are tested under EN60747 requirements.
Ex.: TLP785(D4-GR-LF6,F D4: EN60747 option
GR: CTR rank name
LF6: standard lead bend name
F: [[G]]/RoHS COMPATIBLE
Note: Use TOSHIBA standard type number for safety standard application.
Ex. TLP785(D4-GR-LF6,F Æ TLP785
EN60747 Isolation Characteristics
Description Symbol Rating Unit
Application classification
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
I−IV
I−III
―
Climatic classification
55 / 115 / 21 ―
Pollution degree 2 ―
TLP785 890
Maximum operating insulation voltage
TLP785F
VIORM
1140
Vpk
TLP785 1335
Input to output test voltage,
Vpr = 1.5×VIORM, type and sample test
t
p = 10s, partial discharge < 5pC TLP785F
Vpr
1710
Vpk
TLP785 1670
Input to output test voltage,
Vpr = 1.875×VIORM, 100% production test
t
p = 1s, partial discharge < 5pC TLP785F
Vpr
2140
Vpk
Highest permissible overvoltage
(transient overvoltage, tpr = 60s) VTR 8000 Vpk
Safety limiting values (max. permissible ratings in case of fault)
current (input current) Psi = 0ｍW
power (output or total power dissipation)
temperature
Isi
Psi
Tsi
400
700
175
mA
mW
°C
Insulation resistance, VIO = 500V,Ta=25°C Rsi ≥1012 Ω
TLP785,TLP785F
2012-02-20
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Insulation Related Specifications
7.62mm pitch
TLPxxx type
10.16mm pitch
TLPxxxF type
Minimum creepage distance Cr 7.0mm 8.0mm
Minimum clearance Cl 7.0mm 8.0mm
Minimum insulation thickness ti 0.4 mm
Comparative tracking index CTI 175
(1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this
value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible,
the user shall take suitable measures.
(2) This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
VDE test sign: Marking on product
for EN60747
Marking on packing
for EN60747
Marking Example: TLP785, TLP785F
P
4
CTR Rank Marking
Lot No.
Device Name
4: Mark for option (D4)
1pin indication
TLP785,TLP785F
2012-02-20
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Figure
1 Partial discharge measurement procedure according to EN60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
VVINITIAL(8kV)
Vpr(1335V for TLP785)
(1710V for TLP785F)
VIORM(890V for TLP785)
(1140V for TLP785F)
0
t1tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tP
Vpr(1670V for TLP785)
(2140V for TLP785F)
VIORM(890V for TLP785)
(1140V for TLP785F)
V
t
t3t4
tb
Figure 2 Partial discharge measurement procedure according to EN60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
Figure
3 Dependency of maximum safety ratings on ambient temperature
500
400
300
200
100
0
0 25 50 75 100 125 150 175
1000
800
600
400
200
0
Ta (°C)
Psi Æ
Å Isi
Isi
(mA)
Psi
(
mW
)
TLP785,TLP785F
2012-02-20
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IF-Ta PC-Ta
Forward current I F (mA)
0
20
40
60
80
100
-20 0 20 40 60 80 100 120
Collector power dissipation PC (mW)
0
40
80
120
160
200
-20 0 20 40 60 80 100 120
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)
∆VF/∆Ta-I F IF-VF
Forward voltage temperature coefficient
ΔVF/ΔTa (mV/°C)
-3
-2.6
-2.2
-1.8
-1.4
-1
-0.6
0.1 1 10 100
Forward current IF (mA)
0.1
1
10
100
0.4 0.9 1.4 1.9
Forward current IF (mA) Forward voltage VF (V)
IFP – VFP
Pulse forward current IFP (mA)
1
10
100
1000
0 0.4 0.8 1.2 1.6 2 2.4
Pulse forward voltage VFP (V)
*The above graphs show typical characteristic.
Pulse width≤10μs
Repetitive frequency=100Hz
Ta=25°C
This curve shows the maximum
limit to the forward current.
This curve shows the
maximum limit to the
collector power dissipation.
Ta=25˚C
TLP785,TLP785F
2012-02-20
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ICEO-Ta
IC-VCE
Collector dark current ID (mA)
0.0001
0.001
0.01
0.1
1
10
0 20406080100
Collector current IC (mA)
0
20
40
60
80
0246810
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)
IC-VCE IC-IF
Collector current IC (mA)
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
Collector current IC (mA)
Collector-emitter voltage VCE (V)
0.01
0.1
1
10
100
0.1 1 10 100
IC/IF -IF Collector-emitter voltage VCE (V)
Current transfer ratio IC / IF (%)
1
10
100
1000
0.1 1 10 100
Forward current IF (mA)
*The above graphs show typical characteristic.
5
10
50
30
20
15
Ta=25˚C
IF=2mA
VCE=5V
VCE=0.4V
Ta=25˚C
Ta=25˚C
5
10
50
30
20
15
IF=2mA
V
CE=5V
VCE=0.4V
Ta=25˚C
VCE =24V
TLP785,TLP785F
2012-02-20
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IC - Ta VCE(sat) - Ta
Collector current IC (mA)
0.1
1
10
100
-40-20 0 20406080100
Collecto
r
-Emitter saturation Voltage
VCE(sat) (V)
0
0.04
0.08
0.12
0.16
0.2
-40 -20 0 20 40 60 80 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Switching time - RL
Switching time (μs)
1
10
100
1000
1 10 100
Load resistance RL (kΩ)
*The above graphs show typical characteristic.
IF=5mA,
IC=1mA
I
F
=0.5m
A
5
1
10
20
toff
Ta=25˚C
IF=16mA
VCC=5V
ts
ton
VCE=5V
TLP785,TLP785F
2012-02-20
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
