1
MRF5S21130HR3 MRF5S21130HSR3MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PC N - PC S/ cel lul ar r adi o and W LL
applications.
•Typical 2 -carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc @ 3.84 MHz Channel Bandwidth
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Internally Matched, Controlled Q, for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•Lower Thermal Resistance Package
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD372
2.13
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
CW Operation CW 92 W
THERMAL CHARACTERISTICS
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
RθJC
0.44
0.47
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S21130H/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S21130HR3
MRF5S21130HSR3
2170 MHz, 28 W AVG., 28 V
2 x W- CDMA
LATERAL N -CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF5S21130HSR3
CASE 465B- 03, STYLE 1
NI-880
MRF5S21130HR3
Motorola, Inc. 2004
REV 1
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MRF5S21130HR3 MRF5S21130HSR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M4 (Minimum)
Charge Device Model C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th) 2.5 2.7 3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q) — 3.7 — Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) — 0.26 0.3 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 7.5 — S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.6 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain Gps 12 13.5 — dB
Drain Efficiency ηD24 26 — %
Intermodulation Distortion IM3 -37 -35 dBc
Adjacent Channel Power Ratio ACPR — -39 -37 dBc
Input Return Loss IRL — -12 -9 dB
(1) Part is internally matched both on input and output.
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3
MRF5S21130HR3 MRF5S21130HSR3MOTOROLA RF DEVICE DATA
R1
VBIAS
Z7
RF
INPUT
Z9
C15
+
C20C11
+
C13
+VSUPPLY
RF
OUTPUT
DUT
C1 C3R2 C9
C5
C10
C6
Z6
Z10
C8
C7
Z1 Z2 Z3 Z4 Z5
Z11 Z16Z15Z14Z13Z12Z8
C17
C18
C19
C16
+
C12
+
C14
C2
+
C4
+
Figure 1. MRF5S21130HR3(HSR3) Test Circuit Schematic
Z9, Z10 0.709″ x 0.083″ Microstrip
Z11 0.415″ x 1.000″ Microstrip
Z12 0.531″ x 0.083″ Microstrip
Z13 0.994″ x 0.083″ Microstrip
Z14, Z15 0.070″ x 0.220″ Microstrip
Z16 0.430″ x 0.083″ Microstrip
PCB Taconic TLX8, 0.030″, εr = 2.55
Z1 0.500″ x 0.083″ Microstrip
Z2 0.995″ x 0.083″ Microstrip
Z3 0.905″ x 0.083″ Microstrip
Z4 0.159″ x 1.024″ Microstrip
Z5 0.117″ x 1.024″ Microstrip
Z6, Z7 0.749″ x 0.083″ Microstrip
Z8 0.117″ x 1.000″ Microstrip
Table 1. MRF5S21130HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C13, C14, C15, C16 10 µF, 35 V Tantalum Capacitors 293D1106X9035D Vishay - Sprague
C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay - Vitramon
C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC
C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC
C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC
C20 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips
R1, R2 1 kW, 1/4 W Chip Resistors
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4
MOTOROLA RF DEVICE DATA
Figure 2. MRF5S21130HR3(HSR3) Test Circuit Component Layout
MRF5S21130
C1
R1
R2
C7 C8
C3
C5
C4
C6
C9 C11 C13 C15
C10 C12C14 C16
C17 C19
C18
C20
C2
CUT OUT AREA
Rev 0
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MRF5S21130HR3 MRF5S21130HSR3MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
22202060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W -CDMA Broadband Performance
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
−30
−10
−15
−20
−25
INPUT RETURN LOSS (dB)IRL,
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2200218021602140212021002080
6
14
13
12
11
10
9
8
7
−44
35
30
25
20
−28
−32
−36
−40
1000
11
15
1
IDQ = 1600 mA
1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gps, POWER GAIN (dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
800 mA
1200 mA
1000 mA
10 100
14.5
14
13.5
13
12.5
12
11.5
1000
−65
−25
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
10010
−30
−35
−40
−45
−50
−55
−60
1000 mA
800 mA
IDQ = 1600 mA
1200 mA
1400 mA
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two−Tone Measurement,
10 MHz Tone Spacing
100
−60
−25
0.1
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)IMD,
110
−30
−35
−40
−45
−50
−55
50
58
35
Ideal
P1dB = 52.5 dBm (178 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Pout , OUTPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 5 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
P3dB = 53.02 dBm (200.5 W)
57
56
55
54
53
52
51
37 39 41 43 45
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
3rd Order
5th Order
7th Order
ηD, DRAIN
EFFICIENCY (%)
ηD
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MRF5S21130HR3 MRF5S21130HSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
0
35
5
−55
−20
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 8. 2 -Carrier W- CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
10 15 20 25 30 35 40 45
30 −25
25 −30
20 −35
15 −40
10 −45
5 −50
IM3
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
TYPICAL CHARACTERISTICS
W- CDMA TEST SIGNAL
ηD
ηD,
, DRAIN EFFICIENCY (%), Gps , POWER GAIN (dB)
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
120 140 160 180 200
MTTF FACTOR (HOURS x AMPS )
2
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY (%)
10
1
0.1
0.01
0.001
2468 20515100−5−10−15−20−25 25
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
−110
−120
−70
−20
−80
−60
−50
(dB)
−90
−100
−40
−30
3.84 MHz
Channel BW
−IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
−ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
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MRF5S21130HR3 MRF5S21130HSR3MOTOROLA RF DEVICE DATA
Figure 12. Series Equivalent Input and Output Impedance
f
MHz
Zsource
Ω
Zload
Ω
2080
2110
2140
1.51 - j2.97
1.59 - j2.68
1.52 - j2.54
2.87 - j9.49
3.13 - j9.86
4.05 - j10.90
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg.
Zo = 25 Ω
Zload*
f = 2080 MHz
f = 2200 MHz
Zsource
f = 2080 MHz
f = 2200 MHz
2170
2200 1.54 - j3.13
1.62 - j2.704.80 - j11.75
5.55 - j11.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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MRF5S21130HR3 MRF5S21130HSR3MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE B
NI-880
MRF5S21130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.535 0.545 13.6 13.8
C0.147 0.200 3.73 5.08
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.871 0.889 19.30 22.60
Q.118 .138 3.00 3.51
R0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
S
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
S0.515 0.525 13.10 13.30
M0.872 0.888 22.15 22.55
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
CASE 465C-02
ISSUE A
NI-880S
MRF5S21130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.905 0.915 22.99 23.24
B0.535 0.545 13.60 13.80
C0.147 0.200 3.73 5.08
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.871 0.889 19.30 22.60
R0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb B M
T
B
B
(FLANGE)
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
S0.515 0.525 13.10 13.30
M0.872 0.888 22.15 22.55
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.007 REF 0.178 REF
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MRF5S21130HR3 MRF5S21130HSR3
12
MOTOROLA RF DEVICE DATA
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
HOW TO REACH US:
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P.O. Box 5405, Denver, Colorado 80217 81-3-3440 - 3569
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852- 26668334
HOME PAGE: http://motorola.com/semiconductors
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