IRF540 - Bay Linear, Inc. - Datasheet.Live

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com

POWER MOSFET IRF540

Advance Information

Ordering Inform ation

Device Package Temp.

IRL540T TO-220

0 to 150°C

IRL540S TO-263 ( D2 ) 0 to 150°C

Absolute Maximum Rating

Parameter Max Unit

ID@ TC =25°

°°

°C Continuous Drain Cur rent, V GS @10V 28

ID@ TC =100°

°°

°C Continuous Drain Cur rent, V GS @10V 20

IDM Pulsed Drain Current 110

PD @ TC =25°

°°

°C Power Dissipation 150

PD @ TA =25°

°°

°C Power Dissipation ( PCB Mount, D2 ) (1) 3.7 W

Linear Derating Factor 1.0

Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025 W/°

°°

°C

VGS Gate-to- Source Voltage ( TO-220 ) ±20

VGS Gate-to- Source Voltage ( D2 ) ±10 V

EAS Single Pulse Avalanche Energy ( TO-220 ) (2a) 230

EAS Single Pulse Avalanche Energy ( D2 ) (2b) 440 mJ

IAR Avalanche Current 28 A

EAR Repetitive Avalanche Energy 15 mJ

dv/dt Peak Diode Recovery dv/dt 5.5 V/ns

TJ, TSTG Junction & Storage Temperature Range −55 to +175

Soldering Temperature, for 10 seconds 300 (1.6mm from case) °

°°

°C

Thermal Resistance

Parameter Min Typ Max Units

Rθ

θθ

θJC Junction-to Case - - 1.0

Rθ

θθ

θCS Case-to-Sink, Flat, Greased Surface ( TO-220) 0.50

Rθ

θθ

θJA Junction-to Ambient ( PCB Mount, D2 ) - - 40

Rθ

θθ

θJA Junction-to Ambient - - 62

°°

°C/W

Description

The Bay Linear MOSF ET’s provid e the designers with the best

combination of fast switching, ruggedized device design, low

0n-resist ance and low cost -effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all

commercial-industrial applications at power dissipation level

to approximately to 50 Watts. Also, available in a D2 surface

mount power package with a power dissipation up to 2 Watts.

Features

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

VDSS = 100V

RDS (ON) = 0.077 Ω

ID =28A

Bay Linear

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Bay Linear

Linea r Exc e lle nc e

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com

IRF540

Electrical Characteristics ( TC = 25°

°°

°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V(BR)DSS Drain-to-source Breakdown

Voltage VGS = 0V, ID = 250µA 100 V

V(BR)DSS /

∆

∆∆

∆TJ Breakdown Voltage

Temperature Coefficient Reference to 25°C,

ID = 1mA - 0.13 - V/°

°°

°C

ID(ON) On-State Drain Current

(note 2) VGS > ID(ON) x RDS(ON)Max 28

RDS(ON) Static Drain-to-Source

On-Resistance TO-220: VGS = 10V, ID = 17A

D2: VGS = 5V, ID = 17A (note 4) 0.077

Ω

ΩΩ

Ω

VGS(TH) Gate Threshold Voltage VDS = VGS,ID = 250µA 2.0 - - V

gfs Forward Transconductance VDS = 50V, ID = 17A

8.7 - - S

VDS=100V,VGS=0V 25

IDSS Drain-to –Source Leakage

Current VDS=80V,VGS=0V,TJ=150°C - -

250 µ

µµ

µA

Gate-to-Source Forward

Leakage VGS = 20V 100

IGSS Gate-to-Source Reverse

Leakage VGS = -20V - -

-100

QG Total Gate Charge ID=17V - - 72

Qqs Gate- to -Source Charge VDS=80V - - 11

td ( on) Turn-On Delay Time VDD=50V - 11 -

tf Fall Time RD=2.9 - 43 -

td (off) Turn -O ff Delay T ime RG=9.1Ω - 53 -

tr Rise Time ID=17A - 44 -

LD Internal Drain Inductance

- 4.5

LS Internal Source Inductance

Between lead 6mm(0.25in.) from

package and center or die contact - 7.5 - nH

Ciss Input Capacitance VGS=0V - 1700 -

COSS Output Capacitance VDS=25V - 560 -

Crss Reverse Transfer

Capacitance F =1.0MHZ - 120 -

Source-Drain Rating Characteristics

Symbol Parameter Conditions Min Typ Max Units

IS Continuous Source Cur rent (Bod y

Diode) - - 28

ISM Pulsed Source Current (Body

Diode)

MOSFET symbol showing

the integral reverse p-n

junc t ion di ode . - - 110

VSD Diode Forward Voltage TJ=25°C, IS=28A,VGS=DV - - 2.5

trr Reverse Recovery Time - 180 360 ns

Qrr Reverse Recovery Charge TJ=25°C, IF=17A

di/dt=100A/µs - 1.3 2.8

µµ

µC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by

(LS+LD)

Notes: 1. Repetitive Rating; puls e width limited by max. junction temperature.

2a. VDD = 25V, starting Tj = 25°C, L = 440µH RG = 25Ω, IAS = 28A

2b. VDD = 25V, starting Tj = 25°C, L = 841µH RG = 25Ω, IAS = 28A

3. ISD ≤ 28A, di/dt ≤ 17 0A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C

4. Pulse with ≤ 300µs; duty cycle ≤ 2%

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (9 25) 940-9556 www.baylin ear.com

Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,

computer simulations and/ or initial prototype evaluation.

Preliminary Information- These data sheets conta in minimum and maximum specificat io ns that are based on the initial device characterizations. These li mits are

subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.

The applicati on circuit examples ar e only to explain the representati ve applicatio ns of the devices and ar e not intended to guarantee any c ircuit

desi gn or permit any industrial prop erty right to other rights to execute. Bay Linear takes no responsibility for any prob lem s related to any

industrial property right resulting from the use of th e conten ts shown in the data book. Typical parameters can and do vary in different

applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.

LIFE SUPPORT AND NUCLEAR POLICY

Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical

implants into the body to support or sustain life, in aircraft, space eq uipment, submarine, or nuclear facility applications without

the specific written consent of Bay Linear President.