TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Applications Edge QAM Gain Stage MDU Output RF Distribution Amplifiers AH22 Replacement SOIC-8 Package Product Features Functional Block Diagram 75 , 50 MHz to 1218 MHz Bandwidth Low Noise Figure: < 3 dB pHEMT Device Technology SOIC-8 Package Enhanced Gain and Bandwidth Adjustable Bias Pin 1 Reference Mark RFIN / VG A 1 GNDN/C 2 GNDN/C 3 8 RFOUT / VDD A 7 N/C GND 6 GND N/C 5 RFOUT / VDD B A B RFIN / VG B 4 Backside Pad - RF/DC GND General Description Pin Configuration The TAT7472A1F is a 75 RF Amplifier designed for CATV use, but capable of operation up to 1218 MHz. The TAT7472 A1F contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. Each amplifier contains on-chip active biasing. The bias current set point of each amplifier is adjustable with a single resistor from the input to ground. Pin No. Label 1 2, 3, 6, 7 4 5 8 Backside Pad RFIN / VG A GND RFIN / VG B RFOUT / VDD B RFOUT / VDD A RF/DC GND Typical supply voltage is +5 V, IMD performance and bandwidth can be enhanced with +5.5 V and +6 V operation. Ordering Information Part No. Description TAT7472A1F TAT7472A1F-EB 75 Dual pHEMT Amplifier 50 - 1218 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel. Datasheet: Rev D 06-08-15 (c) 2014 TriQuint - 1 of 9 - Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Absolute Maximum Ratings Parameter Recommended Operating Conditions Rating Storage Temperature Device Voltage (VDD) Total Device Current (IDD=IDDA+IDDB) Device Current per Amp (IDDA or IDDB) Parameter -55 to 150 C +8V 400 mA 200 mA Min Device Voltage (VDD) Device Current (IDD) Case Temperature Tj for 106 hours MTTF Operation of this device outside the parameter ranges given above may cause permanent damage. Typ Max Units 5.0 320 270 -40 V mA() C C 370 +85 +150 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications - Single Ended in 50 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp = +25 C, 50 System Parameter Conditions Min Operational Frequency Range Test Frequency Gain Output IP3 Typ Max 50 1200 Pout = 5 dBm/tone, f=10 MHz, 800 MHz Device Current (IDDA or IDDB) Units 135 800 18 MHz MHz dB +40 dBm 163 185 mA Typical Performance - Push-Pull Configuration in 75 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 C, 75 System. Parameter Frequency Gain Input Return Loss Output Return Loss CTB CSO CCN Conditions Units Typical Value +41 dBmV / channel 80 channels + 108 QAM, Flat Loading. 270 mA < IDD < 320 mA Output P1dB Output IP3 Pout= +8 dBm / tone, f=10 MHz ACPR 62 dBmV output, 1ch Noise Figure Total Device Current, IDD Thermal Resistance, jb(1) Junction to base 50 15 22 20 -78 -82 250 15 25 22 -76 -83 450 15 23 21 -74 -80 860 15.4 16 16 - 1210 15.4 15 13 - MHz dB dB dB dBc dBc 68.5 67.5 65 - - dBc +24.5 +45 69 2.2 +24.5 +45 68 2.3 +24.7 +45 67.5 2.4 320 15 +24.5 +44 64 2.5 23.5 +40(2) 58(2) 2.7 dBm dBm dBc dB mA C/W Notes: 1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle 2. Improves with higher Vdd - see performance plots on page 7 Datasheet: Rev D 06-08-15 (c) 2014 TriQuint - 2 of 9 - Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier TAT7472A1F-EB Evaluation Board Schematic + VDD + VDD C5 + VDD L4 C10 R5 R1 C1 C3 U1 C6 R3 T1 RF IN L6 1 2 1 2 C13 3 1 8 2 7 C14 C11 4 2 C2 R4 3 6 4 5 R2 RF OUT T2 1 1 2 3 4 L3 C9 C15 C12 C7 C4 L5 C8 + VDD Current Adjustment The TAT7472A1H current can be adjusted by R4 & R5. To optimize IMD distortion above 1GHz the device favors a higher supply voltage than 5V. Applying a higher supply voltage will also raise the internal gate voltage at pins 1 & 4, which can be brought down by these resistors, thereby lowering Idd. Since there is little benefit to higher current at higher voltage, lowering the current to offers lower dissipation or the same dissipation as 5V operation. Typical IDD (mA) R4 & R5 10K 20K 30K Datasheet: Rev D 06-08-15 (c) 2014 TriQuint 5V 166 mA 223 mA 252 mA 5.25V 173 mA 237 mA 266 mA - 3 of 9 - VDD 5.5V 185 mA 250 mA 280 mA 5.75V 194 mA 263 mA 294 mA 6V 205 mA 276 mA 309 mA Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier C5 R5 C13 R2 C9 L6 C2 C11 C12 U1 C15 J1 C6 C14 T1 L4 C3 R1 C1 C4 T2 J2 L3 R3 C7 R4 L5 C8 C10 Bill of Material - TAT7472A1F-EB Reference Des. Value Description Manuf. 75 Dual pHEMT Amplifier n/a L3 5.6 nH Chip Coil, 0402, 5% COILCRAFT 0402CS-5N6XJL L4, L5 L6 T1, T2 680 nH 4.7 nH 1:1 Chip Coil, 0805, 5% Chip Coil, 0402, 5% 75 Balun, 5 - 1200 MHz COILCRAFT COILCRAFT MiniRF 0805CS-681XRB 0402CS-4N7XJL RFXF5793 C1 - C8, C10 0.01 uF Ceramic Cap, 0603, 50 V, X7R, 10% C9 0.7 pF Ceramic Cap, 0402, 25 V, NPO, 0.05 pF AVX 04023J0R5BBSTR C11, C12 1.5 pF Ceramic Cap, 0402, 25 V, NPO, 0.05 pF AVX 04023J1R5ABSTR C13 0.7 pF Ceramic Cap, 0603, 50 V, NPO, 0.05 pF AVX 06035J0R7ABSTR C14, C15 0.5 pF Ceramic Cap, 0402, 50 V, NPO, 0.05 pF AVX 04025A0R5BAT2A R1, R2 470 Thick Film Res, 0402, 1/16W, 1% ROHM MCR01MZPF4700 R3 220 Thick Film Res, 0201, 1/16W, 1% PANASONIC J1, J1 75 Female edge mount connector Heatsink block Heatsink for F, connector Qorvo 1069007 PCB Rev 2 TAT7472A1F RF EVB Qorvo 1116650 1 1 R4 , R5 N/L Do Not Load Qorvo Part Number U1 MURATA Amphenol N/A TAT7472A1F GRM188R71H103KA01D ERJ-1GEF221C 531-40039 N/A Notes: 1. R3 & R4 allow IDD bias trimming, a lower resistance will reduce I DD Datasheet: Rev D 06-08-15 (c) 2014 TriQuint - 4 of 9 - Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Performance Plots - TAT7472A1F-EB Test conditions unless otherwise noted: VDD=+5 V, IDD=320 mA (typ.), Temp=+25C Gain vs. Frequency 18 Input Return Loss vs. Frequency 0 17 -10 +25C 16 |S11| (dB) Gain (dB) +85C -40C 15 -20 +85C -30 +25C 14 -40C -40 13 0 200 400 600 800 1000 1200 0 1400 200 400 Output Return Loss vs. Frequency 0 600 800 1000 1200 1400 Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 4.0 3.5 Noise Figure (dB) |S22| (dB) -10 -20 +85C +25C -30 -40C 3.0 2.5 +85C +25C 2.0 -40C 1.5 -40 1.0 0 200 400 600 800 1000 1200 1400 0 200 400 600 Frequency (MHz) Output IP3 vs. Frequency 52 Pout=+8 dBm/tone 10 MHz tone spacing 1200 1400 VDD=+6.0 V, IDD=260 mA VDD=+5.5 V, IDD=290 mA 27 VDD=+5.5 V, IDD=290 mA VDD=+5.0 V, IDD=320 mA VDD=+5.0 V, IDD=320 mA P1dB (dBm) OIP3 (dBm) 1000 P1dB vs. Frequency 28 VDD=+6.0 V, IDD=260 mA 48 800 Frequency (MHz) 44 40 36 26 25 24 23 32 22 50 250 450 650 850 1050 1250 Frequency (MHz) Datasheet: Rev D 06-08-15 (c) 2014 TriQuint 50 250 450 650 850 1050 1250 Frequency (MHz) - 5 of 9 - Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Performance Plots - TAT7472A1F-EB Test conditions unless otherwise noted: Pout = +62 dBmV ACPR vs. Frequency 75 ACPR vs. Frequency 75 VDD=+5.5 V, IDD=290 mA (typ.) VDD=+5 V, IDD=320 mA (typ.) +85C 70 ACPR (dBc) ACPR (dBc) 70 65 +85C 60 +25C +25C -40C 65 60 -40C 55 55 50 50 50 250 450 650 850 1050 1250 50 250 450 650 850 1050 1250 Frequency (MHz) Frequency (MHz) ACPR vs. Frequency 75 VDD=+6.0 V, IDD=260 mA (typ.) +85C 70 +25C ACPR (dBc) -40C 65 60 55 50 50 250 450 650 850 1050 1250 Frequency (MHz) Test conditions unless otherwise noted: VDD=+5 V, Pout = 41dBmV/ch (80ch NTSC + 108QAM), Flat loading CSO CCN CTB -50 -50 -55 -55 -60 -60 -65 -65 -70 -70 -75 -75 -80 -80 -85 -85 80 75 70 65 60 -90 55 -90 0 100 200 300 400 500 600 0 100 RF FREQUENCY (MHz) -40 Datasheet: Rev D 06-08-15 (c) 2014 TriQuint 25 200 300 400 500 600 50 0 100 85 -40 25 - 6 of 9 - 200 300 400 500 600 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 85 -40 25 85 Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Package Marking and Dimensions Marking: Part Number - TAT7472A1F Lot code - AaXXXX Year/Week -YYWW TAT7472A PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.010"). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Datasheet: Rev D 06-08-15 (c) 2014 TriQuint - 7 of 9 - Disclaimer: Subject to change without notice www.triquint.com TAT7472A1F CATV 75 pHEMT Dual RF Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260C maximum reflow temperature) and tin/lead (245C maximum reflow temperature) soldering processes. Caution! ESD-Sensitive Device Contact plating: NiPdAu ESD Rating: Value: Test: Standard: Class 1A 250 V to <500 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class C3 1000 V to < 2000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating MSL Rating: Level 3 Test: 260C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com Tel: Fax: +1.707.526.4498 +1.707.526.1485 For technical questions and application information: Email: sjcapplications.engineering@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev D 06-08-15 (c) 2014 TriQuint - 8 of 9 - Disclaimer: Subject to change without notice www.triquint.com