TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 1 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
SOIC-8 Package
Applications
Edge QAM Gain Stage
MDU Output
RF Distribution Amplifiers
AH22 Replacement
Product Features
75 Ω, 50 MHz to 1218 MHz Bandwidth
Low Noise Figure: < 3 dB
pHEMT Device Technology
SOIC-8 Package
Enhanced Gain and Bandwidth
Adjustable Bias
Functional Block Diagram
1
2
3
4
8
7
6
5
RFOUT / VDD A
N/C
N/C
RFOUT / VDD B
RFIN / VG A
N/C
N/C
RFIN / VG B
Backside Pad - RF/DC GND
Pin 1 Reference Mark
A
B
Pin Configuration
Pin No.
Label
RFIN / VG A
GND
RFIN / VG B
RFOUT / VDD B
RFOUT / VDD A
RF/DC GND
General Description
The TAT7472A1F is a 75 Ω RF Amplifier designed for
CATV use, but capable of operation up to 1218 MHz.
The TAT7472 A1F contains two separate amplifiers for
push pull applications. It is fabricated using 6-inch GaAs
pHEMT technology to optimize performance and cost.
Each amplifier contains on-chip active biasing. The bias
current set point of each amplifier is adjustable with a
single resistor from the input to ground.
Typical supply voltage is +5 V, IMD performance and
bandwidth can be enhanced with +5.5 V and +6 V
operation.
Ordering Information
Part No.
Description
TAT7472A1F
75 Ω Dual pHEMT Amplifier
TAT7472A1F-EB
50 – 1218 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
GND
GND
GND
GND
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 2 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−55 to 150 °C
Device Voltage (VDD)
+8V
Total Device Current (IDD=IDDA+IDDB)
400 mA
Device Current per Amp (IDDA or IDDB)
200 mA
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Device Voltage (VDD)
5.0
V
Device Current (IDD)
270
320
370
mA(†)
Case Temperature
−40
+85
°C
Tj for 106 hours MTTF
+150
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications − Single Ended in 50 Ohms
Test conditions unless otherwise noted: VCC = +5 V, Temp = +25 °C, 50 Ω System
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
50
1200
MHz
Test Frequency
800
MHz
Gain
18
dB
Output IP3
Pout = 5 dBm/tone, ∆f=10 MHz,
800 MHz
+40
dBm
Device Current (IDDA or IDDB)
135
163
185
mA
Typical Performance − Push-Pull Configuration in 75 Ohms
Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 °C, 75 Ω System.
Parameter
Conditions
Typical Value
Units
Frequency
50
250
450
860
1210
MHz
Gain
15
15
15
15.4
15.4
dB
Input Return Loss
22
25
23
16
15
dB
Output Return Loss
20
22
21
16
13
dB
CTB
+41 dBmV / channel
80 channels + 108 QAM,
Flat Loading.
270 mA < IDD < 320 mA
−78
−76
−74
-
-
dBc
CSO
−82
−83
−80
-
-
dBc
CCN
68.5
67.5
65
-
-
dBc
Output P1dB
+24.5
+24.5
+24.7
+24.5
23.5
dBm
Output IP3
Pout= +8 dBm / tone, Δf=10 MHz
+45
+45
+45
+44
+40(2)
dBm
ACPR
62 dBmV output, 1ch
69
68
67.5
64
58(2)
dBc
Noise Figure
2.2
2.3
2.4
2.5
2.7
dB
Total Device Current, IDD
320
mA
Thermal Resistance, θjb(1)
Junction to base
15
°C/W
Notes:
1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle
2. Improves with higher Vdd – see performance plots on page 7
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 3 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
TAT7472A1F-EB Evaluation Board Schematic
C1
C2
U1
R1 C3
R2 C4
C11
C12
C6
C7
T2T1
R5
R4
L3
L6
C13 C9
L5
L4
C5
C8
+ VDD
+ VDD
+ VDD
+ VDD
C10
1
2
3
4 5
6
7
8C14
C15
R3
RF OUT
RF IN 1
2
1
2
3
4
1
2
1
2
3
4
Current Adjustment
The TAT7472A1H current can be adjusted by R4 & R5. To optimize IMD distortion above 1GHz the device favors a higher
supply voltage than 5V. Applying a higher supply voltage will also raise the internal gate voltage at pins 1 & 4, which can be
brought down by these resistors, thereby lowering Idd. Since there is little benefit to higher current at higher voltage, lowering the
current to offers lower dissipation or the same dissipation as 5V operation.
Typical IDD (mA)
VDD
5V
5.25V
5.5V
5.75V
6V
R4 & R5
10K Ω
166 mA
173 mA
185 mA
194 mA
205 mA
20K Ω
223 mA
237 mA
250 mA
263 mA
276 mA
30K Ω
252 mA
266 mA
280 mA
294 mA
309 mA
TAT7472A1F-EB Evaluation Board
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 4 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
C3
C4R2
R1
R5 R4
C1
C2
L6
C7
C6
L3
C9
C10
C11 C12
U1
L5
L4
C5 C8
T2T1
J1
J2
C13
R3
C15
C14
Bill of Material − TAT7472A1F-EB
Reference Des.
Value
Description
Manuf.
Part Number
U1
n/a
75 Ω Dual pHEMT Amplifier
Qorvo
TAT7472A1F
L3
5.6 nH
Chip Coil, 0402, 5%
COILCRAFT
0402CS-5N6XJL
L4, L5
680 nH
Chip Coil, 0805, 5%
COILCRAFT
0805CS-681XRB
L6
4.7 nH
Chip Coil, 0402, 5%
COILCRAFT
0402CS-4N7XJL
T1, T2
1:1
75 Ω Balun, 5 – 1200 MHz
MiniRF
RFXF5793
C1 – C8, C10
0.01 uF
Ceramic Cap, 0603, 50 V, X7R, 10%
MURATA
GRM188R71H103KA01D
C9
0.7 pF
Ceramic Cap, 0402, 25 V, NPO, ±0.05 pF
AVX
04023J0R5BBSTR
C11, C12
1.5 pF
Ceramic Cap, 0402, 25 V, NPO, ±0.05 pF
AVX
04023J1R5ABSTR
C13
0.7 pF
Ceramic Cap, 0603, 50 V, NPO, ±0.05 pF
AVX
06035J0R7ABSTR
C14, C15
0.5 pF
Ceramic Cap, 0402, 50 V, NPO, ±0.05 pF
AVX
04025A0R5BAT2A
R1, R2
470 Ω
Thick Film Res, 0402, 1/16W, 1%
ROHM
MCR01MZPF4700
R3
220 Ω
Thick Film Res, 0201, 1/16W, 1%
PANASONIC
ERJ-1GEF221C
J1, J1
75 Ω
Female edge mount connector
Amphenol
531-40039
Heatsink
block
Heatsink for F, connector
Qorvo
1069007
PCB
Rev 2
TAT7472A1F RF EVB
Qorvo
1116650
R41, R51
N/L
Do Not Load
N/A
N/A
Notes:
1. R3 & R4 allow IDD bias trimming, a lower resistance will reduce IDD
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 5 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Performance Plots − TAT7472A1F-EB
Test conditions unless otherwise noted: VDD=+5 V, IDD=320 mA (typ.), Temp=+25°C
13
14
15
16
17
18
0 200 400 600 800 1000 1200 1400
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
+85°C
+25°C
−40°C
-40
-30
-20
-10
0
0 200 400 600 800 1000 1200 1400
|S11| (dB)
Frequency (MHz)
Input Return Loss vs. Frequency
+85°C
+25°C
−40°C
-40
-30
-20
-10
0
0 200 400 600 800 1000 1200 1400
|S22| (dB)
Frequency (MHz)
Output Return Loss vs. Frequency
+85°C
+25°C
−40°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 200 400 600 800 1000 1200 1400
Noise Figure (dB)
Frequency (MHz)
Noise Figure vs. Frequency
+85°C
+25°C
−40°C
32
36
40
44
48
52
50 250 450 650 850 1050 1250
OIP3 (dBm)
Frequency (MHz)
Output IP3 vs. Frequency
VDD=+6.0 V, IDD=260 mA
VDD=+5.5 V, IDD=290 mA
VDD=+5.0 V, IDD=320 mA
Pout=+8 dBm/tone
10 MHz tone spacing
22
23
24
25
26
27
28
50 250 450 650 850 1050 1250
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
VDD=+6.0 V, IDD=260 mA
VDD=+5.5 V, IDD=290 mA
VDD=+5.0 V, IDD=320 mA
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 6 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Performance Plots − TAT7472A1F-EB
Test conditions unless otherwise noted: Pout = +62 dBmV
50
55
60
65
70
75
50 250 450 650 850 1050 1250
ACPR (dBc)
Frequency (MHz)
ACPR vs. Frequency
VDD=+5 V, IDD=320 mA (typ.)
+85°C
+25°C
−40°C
50
55
60
65
70
75
50 250 450 650 850 1050 1250
ACPR (dBc)
Frequency (MHz)
ACPR vs. Frequency
VDD=+5.5 V, IDD=290 mA (typ.)
+85°C
+25°C
−40°C
50
55
60
65
70
75
50 250 450 650 850 1050 1250
ACPR (dBc)
Frequency (MHz)
ACPR vs. Frequency
VDD=+6.0 V, IDD=260 mA (typ.)
+85°C
+25°C
−40°C
Test conditions unless otherwise noted: VDD=+5 V, Pout = 41dBmV/ch (80ch NTSC + 108QAM), Flat loading
-90
-85
-80
-75
-70
-65
-60
-55
-50
0 100 200 300 400 500 600
RF FREQUENCY (MHz)
CSO
-40 25 85
-90
-85
-80
-75
-70
-65
-60
-55
-50
0 100 200 300 400 500 600
RF FREQUENCY (MHz)
CTB
-40 25 85
50
55
60
65
70
75
80
0 100 200 300 400 500 600
RF FREQUENCY (MHz)
CCN
-40 25 85
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 7 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Package Marking and Dimensions
Marking:
Part Number – TAT7472A1F
Lot code – AaXXXX
Year/Week –YYWW
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.010”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
TAT7472A
TAT7472A1F
CATV 75 Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 8 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: Class 1A
Value: ≥ 250 V to <500 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class C3
Value: ≥1000 V to < 2000 V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
Solderability
Compatible with both lead-free (260°C maximum reflow
temperature) and tin/lead (245°C maximum reflow
temperature) soldering processes.
Contact plating: NiPdAu
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
MSL Rating: Level 3
Test: 260°C convection reflow
Standard: JEDEC Standard IPC/JEDEC J-STD-020
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com Tel: +1.707.526.4498
Email: info-sales@triquint.com Fax: +1.707.526.1485
For technical questions and application information:
Email: sjcapplications.engineering@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
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TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.