BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 6 -- 1 September 2015 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 2.9 32 350 13 50 8 5 1.2 Features and benefits High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz BLS7G2729L(S)-350P LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS7G2729L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLS7G2729LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLS7G2729L-350P - BLS7G2729LS-350P - Version flanged balanced ceramic package; 2 mounting holes; SOT539A 4 leads earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C Tj [1] junction temperature [1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-mb) Conditions transient thermal impedance from junction to mounting base Typ Unit Tcase = 85 C; PL = 350 W tp = 100 s; = 10 % 0.07 K/W tp = 200 s; = 10 % 0.09 K/W tp = 300 s; = 10 % 0.10 K/W tp = 100 s; = 20 % 0.09 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 11.0 A - 16.2 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 0.065 - Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 200 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 350 W 11 13 - dB RLin input return loss PL = 350 W - 10 - dB D drain efficiency PL = 350 W 46 50 - % Pdroop(pulse) pulse droop power PL = 350 W - 0 0.5 dB tr rise time PL = 350 W - 8 50 ns tf fall time PL = 350 W - 5 50 ns BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 s; = 10 %. 7.2 Impedance information Table 8. Typical impedance ZS[1] f ZL[1] GHz 2.7 2.8 j8.7 1.8 j5.1 2.8 3.9 j8.2 2.1 j5.4 2.9 4.8 j9.3 1.5 j5.7 [1] Impedances are taken at a single halve of the push-pull transistor drain 1 gate 1 ZS ZL gate 2 drain 2 Fig 1. 001aak544 Definition of transistor impedance BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 7.3 Test circuit information BLS7G2729L (S) - 350P R1 R3 C5 C9 C1 C11 C13 REV 3.0 C8 C7 C2 R2 REV 3.0 C6 R4 C10 C12 C14 BLS7G2729L (S) - 350P aaa-007604 Printed-Circuit Board (PCB): Rogers RO6006; r = 6.45 F/m; thickness = 0.635 mm; thickness copper plating = 35 m. The vias can be used as a reference to place components. The above layout shows the test circuit used to measure the devices in production. A more appropriate application demonstration for specific customer needs can be provided. See Table 9 for list of components. Fig 2. Component layout Table 9. List of components See Figure 2 for component layout. Component Description Value C1, C2 SMD capacitor 4.7 F, 50 V C5, C6 multilayer ceramic chip capacitor 12 pF ATC800A C7, C8 multilayer ceramic chip capacitor 20 pF ATC800A C9, C10 multilayer ceramic chip capacitor 12 pF ATC800A C11, C12 multilayer ceramic chip capacitor 1 nF ATC700A C13, C14 electrolytic capacitor 220 F, 63 V R1, R2 SMD resistor 9.1 SMD 0805 R3, R4 SMD resistor 8 SMD 0805 BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 Remarks (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 7.4 Graphical data aaa-007605 25 Gp (dB) 60 D (%) D 20 48 15 36 aaa-007606 15 60 Gp (dB) D (%) 14 50 13 40 (1) (2) (3) Gp 12 30 11 20 Gp 10 24 (1) (2) (3) 5 12 0 0 100 200 300 400 PL (W) 10 0 500 10 D 9 0 38 VDS = 32 V; IDq = 200 mA. 43 (1) f = 2.7 GHz (2) f = 2.8 GHz (2) f = 2.8 GHz (3) f = 2.9 GHz (3) f = 2.9 GHz Power gain and drain efficiency as function of output power; typical values Fig 4. aaa-009073 500 PL (W) (1) (2) (3) 300 52 200 50 100 48 0 10 15 aaa-009074 56 D (%) 54 5 58 Power gain and drain efficiency as function of output power; typical values 400 0 53 PL (dBm) VDS = 32 V; IDq = 200 mA. (1) f = 2.7 GHz Fig 3. 48 20 25 Pi (W) 46 2600 2650 2700 2750 2800 2850 2900 2950 3000 f (MHz) 30 VDS = 32 V; IDq = 200 mA; tp =300 s; = 10 %. VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. (1) f = 2.7 GHz (2) f = 2.8 GHz (3) f = 2.9 GHz Fig 5. Output power as a function of input power; typical values Fig 6. Drain efficiency as a function of frequency; typical values BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor aaa-009075 14 Gp (dB) 13.5 aaa-009076 20 RLin (dB) 18 13 16 12.5 14 12 12 11.5 11 2650 2700 2750 2800 2850 2900 f (MHz) 10 2650 2950 VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. Fig 7. Power gain as a function of frequency; typical values 2700 2750 2800 2850 2900 f (MHz) 2950 VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. Fig 8. Input return loss as a function of frequency; typical values BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 9. EUROPEAN PROJECTION Package outline SOT539A BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) A b 4.7 11.81 w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min c D D1 0.18 31.55 31.52 E E1 9.5 9.53 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 10. Package outline SOT539B BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure S-band Short wave Band SMD Surface-Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS7G2729L-350P_LS-350P #6 20150901 Modifications: Change notice Supersedes Product data sheet BLS7G2729L-350P_LS-350P v.5 * The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. * Legal texts have been adapted to the new company name where appropriate. BLS7G2729L-350P_LS-350P v.5 20140516 Product data sheet - BLS7G2729L-350P_LS-350P v.4 BLS7G2729L-350P_LS-350P v.4 20130923 Product data sheet - BLS7G2729L-350P_LS-350P v.3 BLS7G2729L-350P_LS-350P v.3 20130712 Objective data sheet - BLS7G2729L-350P_LS-350P v.2 BLS7G2729L-350P_LS-350P v.2 20130506 Objective data sheet - BLS7G2729L-350P_LS-350P v.1 BLS7G2729L-350P_LS-350P v.1 20110524 Objective data sheet - - BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. 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Suitability for use -- Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the Ampleon product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). Ampleon does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon' standard warranty and Ampleon' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own trademarks. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLS7G2729L-350P_LS-350P#6 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 6 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 13 BLS7G2729L(S)-350P LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit information . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS7G2729L-350P_LS-350P#6