MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLM113-2-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. The diode is synthesized using transistors and resistors in a monolithic integrated circuit. As such, it has the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances. The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon-the energy-band gap voltage-makes it useful for many temperature-compensation and temperature-measurement functions. Industry Part Number NS Part Numbers LM113 LM113-2H-QMLV ** LM113-2H-SMD * LM113-2H/883 Prime Die LM113 Controlling Document See Features Page Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLM113-2-X REV 1A0 Features - SMD : 5962- 8671103XA*, 5962-9684303VXA** 2 MICROCIRCUIT DATA SHEET MNLM113-2-X REV 1A0 (Absolute Maximum Ratings) (Note 1) Power Dissipation 100 mW Reverse Current 50 mA Forward Current 50 mA Storage Temperature Range -65 C to +150 C Lead Temperature (Soldering, 10 seconds) Operating Temperature Range 300 C -55 C to + 125 C Note 1: For operating at elevated tempertures, the device must be derated based on a 150 C maximum junction and a thermal resistance of 80C/W junction to case or 440 C/W junction to ambient. 3 MICROCIRCUIT DATA SHEET MNLM113-2-X REV 1A0 Electrical Characteristics DC PARAMETERS SYMBOL PARAMETER Vzr Zener Voltage Delta Vzr Delta Zener Voltage CONDITIONS NOTES PINNAME MAX 1.195 1.245 V 1 1.194 1.246 V 2, 3 0.5mA <= Ir <= 20mA 15 mV 1 0.5mA <= Ir <= 10mA 15 mV 2, 3 1 V 1, 2, 3 Ir = 1 mA UNIT SUBGROUPS MIN Vf Forward Voltage Drop If = 1mA Rr Reverse Dynamic Impedance Ir = 1mA 1 1 Ohm 4 Ir = 10mA 1 0.8 Ohm 4 V 1 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Delta calculations performed on JAN S and QMLV devices at Group B, Subgroup 5 "ONLY". Vzr Zener Voltage Note 1: Ir = 1mA -0.02 Guaranteed parameter not tested. 4 0.02 MICROCIRCUIT DATA SHEET MNLM113-2-X REV 1A0 Graphics and Diagrams GRAPHICS# DESCRIPTION 09385HR (blank) MKT-H02ARC (blank) See attached graphics following this page. 5