Original Creation Date: 11/07/96
Last Update Date: 03/17/97
Last Major Revision Date: 11/07/96
MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET
REFERENCE DIODE
General Description
The LM113 is a temperature compensated, low voltage reference diode. It features
extremely-tight regulation over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature stability.
The diode is synthesized using transistors and resistors in a monolithic integrated
circuit. As such, it has the same low noise and long term stability as modern IC op amps.
Further, output voltage of the reference depends only on highly-predictable properties of
components in the IC; so they can be manufactured and supplied to tight tolerances.
The characteristics of this reference recommend it for use in bias-regulation circuitry,
in low-voltage power supplies or in battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of silicon-the energy-band gap voltage-makes it
useful for many temperature-compensation and temperature-measurement functions.
NS Part Numbers
LM113-2H-QMLV **
LM113-2H-SMD *
LM113-2H/883
Industry Part Number
LM113
Prime Die
LM113
Controlling Document
See Features Page
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM113-2-X REV 1A0
Features
- SMD : 5962- 8671103XA*, 5962-9684303VXA**
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MICROCIRCUIT DATA SHEET
MNLM113-2-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Power Dissipation 100 mW
Reverse Current 50 mA
Forward Current 50 mA
Storage Temperature Range -65 C to +150 C
Lead Temperature 300 C(Soldering, 10 seconds)
Operating Temperature Range -55 C to + 125 C
Note 1: For operating at elevated tempertures, the device must be derated based on a 150 C
maximum junction and a thermal resistance of 80C/W junction to case or 440 C/W
junction to ambient.
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MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vzr Zener Voltage Ir = 1 mA 1.195 1.245 V 1
1.194 1.246 V 2, 3
Delta Vzr Delta Zener
Voltage 0.5mA <= Ir <= 20mA 15 mV 1
0.5mA <= Ir <= 10mA 15 mV 2, 3
Vf Forward Voltage
Drop If = 1mA 1 V 1, 2,
3
Rr Reverse Dynamic
Impedance Ir = 1mA 1 1 Ohm 4
Ir = 10mA 1 0.8 Ohm 4
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Delta calculations performed on JAN S and QMLV devices at Group B, Subgroup 5 "ONLY".
Vzr Zener Voltage Ir = 1mA -0.02 0.02 V 1
Note 1: Guaranteed parameter not tested.
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MICROCIRCUIT DATA SHEET
MNLM113-2-X REV 1A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
09385HR (blank)
MKT-H02ARC (blank)
See attached graphics following this page.
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