2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) A V IEBO VEB=7V 100max A 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 C fT VCE=12V, IE=-0.3A 6typ MHz -55 to +150 C COB VCB=10V, f=1MHz 50typ pF 5.450.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) 250 250 1 10 -5 0.15 -0.5 1max 5max 1max 0 0 1 2 3 4 -55 C V C E (sat) 0 0.02 0.05 0.1 Collector-Emitter Voltage V C E (V) 1 0 3 t on *t stg * t f - I C Characteristics (Typical) 8 t on * t st g* t f ( s) -55C 10 0.1 0.5 1 3 5 t s tg V C C 250V I C :I B1 :-I B2 =2:0.3:1Const. 1 tf 0.5 t on 0.2 0.1 0.5 10 3 0.5 0.3 5 10 P c - T a Derating Maxim um Power Dissip ation P C (W) 500 Collector-Emitter Voltage V C E (V) 1000 Collecto r Curr ent I C (A) nk 100 40 si Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 60 at 0.1 50 500 1000 he Collector-Emitter Voltage V C E (V) 1000 100 ite 500 50 fin 100 1 80 1 0.5 p) 1 In Without Heatsink Natural Cooling 1.2 ith 0.5 1.0 Time t(ms) s 1 0.8 W Co lle ctor Cu rren t I C (A) 1 5 5 0.6 3 10 0 0.4 j-a - t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 50 Transient Thermal Resistance 25C Switching T im e DC Curr ent Gain h F E 125C 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 50 ase Tem 5C Collector Current I C (A) h FE - I C Characteristics (Typical) 5 0.01 1 ( 12 0.5 mp) Temp) e Te (Case (Cas 125C 2 -55C (C I B =50mA e Temp) 25C (Cas j - a (C /W) 1 p) -55C (Case Tem 125C 100mA V B E (sat) 1 Collector Current I C (A) 200 mA 2 (V CE =4V) 3 2 5 Cas eT C e m p) Collector Current I C (A) 300mA 1.4 E I C - V BE Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 3 C Weight : Approx 6.0g a. Type No. b. Lot No. V CE (sat),V BE (sat) - I C Temperature Characteristics (Typical) 400mA 0.65 +0.2 -0.1 5.450.1 B RL () 500mA 2 3 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) o3.20.1 b V VCC (V) 2.00.1 mp) Tstg a 4.80.2 ase Te IC 25C (C VEBO 4.0max 800 20.0min VCEO 15.60.4 9.6 1.8 100max V 5.00.2 VCB=800V 900 2.0 ICBO VCBO 4.0 Unit Symbol 19.90.3 2SC3678 Unit External Dimensions MT-100(TO3P) (Ta=25C) Conditions 2SC3678 Symbol Application : Switching Regulator and General Purpose Electrical Characteristics Absolute maximum ratings (Ta=25C) 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 67