67
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
Application : Switching Regulator and General Purpose
2SC3678
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3678
900
800
7
3(Pulse6)
1.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3678
100max
100max
800min
10to30
0.5max
1.2max
6typ
50typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
250
IC
(A)
1
VBB2
(V)
–5
IB2
(A)
–0.5
ton
(
µ
s)
1max
tstg
(
µ
s)
5max
tf
(
µ
s)
1max
IB1
(A)
0.15
VBB1
(V)
10
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
2
1
3
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
300mA
200mA
100mA
I
B
=50mA
500mA 400mA
0.02 0.10.05 10.5 3
0
1
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
125˚C
VCE(sat)
–
5
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.01 0.10.05 1 30.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0.1 10.5 3
0.2
0.5
5
8
1
Switching Time ton•tstg•tf(µs)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:–IB2
=2:0.3:1Const.
0.3
1
3
0.5
1 10 100 10005 50 500
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
80
60
40
20
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
100 50050 1000
1
0.5
0.1
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100 500 100050
1
0.5
0.1
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
100µs
Without Heatsink
Natural Cooling
0
3
1
2
0 1.20.4 0.6 0.8 1.00.2Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
