BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV UP TO 25" DESCRIPTION The BU508DFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot V i so l T stg Tj April 2002 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature Value 1500 700 10 8 15 5 8 50 2500 -65 to 150 150 Unit V V V A A A A W V o o C C 1/6 BU508DFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o Tj = 125 C I C = 100 m A Max. Un it 1 2 mA mA 300 mA 700 V V CE(sat ) Collector-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1 V V BE(s at) Base-Emitt er Saturation Voltage I C = 4.5 A IB = 2 A 1.3 V ts tf INDUCTIVE LO AD Storage Time Fall Time I C = 4.5 A hF E = 2.5 V CC = 140 V L C = 0.9 mH LB = 3 H (see figure 1) VF Diode F orward Voltage I F = 4 A fT Transition Frequency I C = 0.1 A 2 V CE = 5 V f = 5 MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 2/6 s ns 7 550 Thermal Impedance 7 V MHz BU508DFI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load 3/6 BU508DFI Switching Time Percentance vs. Case Figure 1: Inductive Load Switching Test Circuit. 4/6 BU508DFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m 0.146 P025C/A 5/6 BU508DFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6