BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicroelectronicsPREFERRED
SALESTYPE
■HIGH VOLTAGECAPABILITY ( > 1500 V )
■NPNTRANSISTOR WITH INTEGRATED
FREEWHEELINGDIODE
■FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASYMOUNTING
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV UP TO 25”
DESCRIPTION
The BU508DFI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB=0) 700 V
V
EBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 15 A
I
BBase Current 5 A
IBM Base Peak Current (tp<5ms) 8 A
P
tot Total Dissipation at Tc=25o
C50W
V
isol Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink 2500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
ISOWATT218
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE = 1500 V
VCE = 1500 V Tj=125o
C1
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 300 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C= 100 m A 700 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=4.5A I
B=2A 1 V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=4.5A I
B=2A 1.3 V
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC=4.5A h
FE =2.5 V
CC =140V
L
C=0.9mH L
B=3µH
(see figure 1) 7
550 µs
ns
VFDiode Forward Voltage IF=4A 2 V
f
TTransition Frequency IC=0.1A V
CE = 5 V f = 5 MHz 7 MHz
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
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Derating Curve
Collector Emitter SaturationVoltage
Switching Time InductiveLoad
DC Current Gain
BaseEmitter Saturation Voltage
Switching Time InductiveLoad
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Figure1: InductiveLoad Switching TestCircuit.
Switching Time Percentancevs. Case
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218MECHANICAL DATA
- Weight: 4.9g (typ.)
- MaximumTorque (applied to mounting flange) Recommended: 0.8 Nm; Maximum:1 Nm
- Theside of the dissipator must beflat within 80 µm
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Information furnished is believed tobe accurate andreliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics – Printed in Italy – AllRights Reserved
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