CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 Features * Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A * Excellent current gain characteristics * Complementary to BTB772SA3 Symbol Outline BTD882SA3 TO-92 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg Collector Current Power Dissipation Junction Temperature Storage Temperature Limit Unit 60 50 5 3 (Note) 7 750 150 -55~+150 V V V A A mW C C Note : *1. Single Pulse Pw350s,Duty2%. BTD882SA3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 2/4 Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 52 100 - Typ. 0.25 90 45 Max. 1 1 0.5 2 500 - Unit V V V A A V V MHz pF Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=50V. IE=0 VEB=3V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE2 Rank Q Range 100~200 BTD882SA3 P 160~320 E 250~500 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 3/4 Characteristic Curves Saturation voltage vs Collector current Current gain vs Collector current 1000 1000 VCE(sat) 100 Saturation voltage---(mV) Current gain---HFE VCE=5V VCE=2V VCE=1V 100 IC=40IB 10 IC=10IB 1 10 1 10 100 1000 Collector current---IC(mA) 1 10000 10 100 1000 Collector current---IC(mA) 10000 Power Derating Curve Saturation votlage vs Collector current 10000 800 Power Dissipation---PD(mW) VBE(sat)@IC=10IB Saturation voltage---(mV) IC=20IB 1000 700 600 500 400 300 200 100 0 100 1 10 100 1000 Collector current---IC(mA) BTD882SA3 10000 0 50 100 150 200 Ambient Temperature --- Ta( ) CYStek Product Specification Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension 2 A Marking: B 1 2 3 D882S 3 C D H I G 1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882SA3 CYStek Product Specification