CYStech Electronics Corp.
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 1/4
BTD882SA3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD882SA3
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772SA3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
IC(DC) 3 A
Collector Current IC(Pulse) 7 (Note) A
Power Dissipation Pd 750 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw≦350µs,Duty≦2%.
TO-92
BTD882SA3
B：Base
C：Collector
E：Emitter
E C B
CYStech Electronics Corp.
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 2/4
BTD882SA3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=50µA, IE=0
BVCEO 50 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=50µA, IC=0
ICBO - - 1 µA VCB=50V. IE=0
IEBO - - 1 µA VEB=3V,IC=0
*VCE(sat) - 0.25 0.5 V IC=2A, IB=0.2A
*VBE(sat) - - 2 V IC=2A, IB=0.2A
*hFE1 52 - - - VCE=2V, IC=20mA
*hFE2 100 - 500 - VCE=2V, IC=1A
fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz
Cob - 45 - pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100~200 160~320 250~500
CYStech Electronics Corp.
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 3/4
BTD882SA3 CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
10
100
1000
1 10 100 1000 10000
Collector current---IC(mA)
Current gain---H
FE
VCE=5V
VCE=1V
VCE=2V
Saturation voltage vs Collector current
1
10
100
1000
1 10 100 1000 10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IBIC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1 10 100 1000 10000
Collector current---IC(mA)
Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
0
100
200
300
400
500
600
700
800
0 50 100 150 200
Ambient Temperature --- Ta(℃ )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 4/4
BTD882SA3 CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5°
E - *0.0500 - *1.27 α2 - *2° - *2°
F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D882S
Marking:
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Packa
g
e Code: A3
