DE275X2-102N06A - IXYS Corporation

DE275X2-102N06A

RF Power MOSFET

VDSS = 1000 V

ID25 = 16 A

RDS(on) = 0.8 Ω

PDC = 1180 W

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25°C to 150°C 1000 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 Tc = 25°C 16 A

IDM Tc = 25°C, pulse width limited by TJM 48 A

IAR Tc = 25°C 6 A

EAR Tc = 25°C 20 mJ

dv/dt

IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,

Tj ≤ 150°C, RG = 0.2Ω

5 V/ns

IS = 0 >200 V/ns

PDC (1) 1180 W

PDHS (1) Tc = 25°C, Derate 5.0W/°C above 25°C 750 W

PDAMB (1) Tc = 25°C 5.0 W

Symbol Test Conditions Characteristic Values

TJ = 25°C unless otherwise specified

min. typ. max.

VDSS VGS = 0 V, ID = 3 ma 1000 V

VGS(th) VDS = VGS, ID = 4 ma 2.5 5.5 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = 0.8 VDSS TJ = 25°C

VGS = 0 TJ = 125°C

µA

RDS(on) 1.6

Ω

gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 7.5 S

VGS = 15 V, ID = 0.5ID25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

RthJC (1) 0.25 C/W

RthJHS (1) 0.50 C/W

TJ -55 +175 °C

TJM 175 °C

Tstg -55 +175 °C

TL 1.6mm (0.063 in) from case for 10 s 300 °C

Weight 4 g

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power

cycling capability

• IXYS advanced low Qg process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other

hazardous materials

Advantages

• High Performance Push-Pull RF

Package

• Optimized for RF and high speed

switching at frequencies to >100MHz

• Easy to mount—no insulators needed

• High power density

♦ Common Source Push-Pull Pair

♦ N-Channel Enhancement Mode

♦ Low Qg and Rg

♦ High dv/dt

♦ Nanosecond Switching

DRAIN 1

SG1 SD1

GATE 1

DRAIN 2

SG2SD2

GATE 2

The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a

common source configuration. The device is optimized for push-pull or paral-

lel operation in RF generators and amplifiers at frequencies to >65 MHz.

Note: All specifications are per each

transistor, unless otherwise noted.

(1) Thermal specifications are for the

package, not per transistor

Unless noted, specifications are for each output device

DE275X2-102N06A

RF Power MOSFET

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified)

min. typ. max.

RG 0.3 Ω

Ciss 1800 pF

Coss VGS = 0 V, VDS = 0.8 VDSS(max),

f = 1 MHz 130 pF

Crss 25 pF

Td(on) 3 ns

Ton VGS = 15 V, VDS = 0.8 VDSS

ID = 0.5 IDM

RG = 0.2 Ω (External)

2 ns

Td(off) 4 ns

Toff 5 ns

Qg(on) 50 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS

ID = 0.5 ID25 20 nC

Qgd 30 nC

Cstray Back Metal to any Pin 21 pF

Source-Drain Diode Characteristic Values

(TJ = 25°C unless otherwise specified)

Symbol Test Conditions min. typ. max.

IS VGS = 0 V 6 A

ISM Repetitive; pulse width limited by TJM 96 A

VSD 1.5 V

Trr

200 ns

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2%

QRM IF = IS, -di/dt = 100A/µs,

VR = 100V

0.6

µC

IRM 4 A

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508

5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715

5,381,025 5,640,045

(1) These parameters apply to the package, not individual MOSFET devices.

For detailed device mounting and installation instructions, see the “DE-

Series MOSFET Mounting Instructions” technical note on IXYS RF’s web

site at www.ixysrf.com/Technical_Support/App_notes.html

DE275X2-102N06A

RF Power MOSFET

10 0

1000

10000

0 100 200 300 400 500 600 700 800 900 1000

Vds in Volts

Capacitance in pF

Ciss

Coss

Crss

275X2-102N06A Capacitances vs Vds

DE275X2-102N06A

RF Power MOSFET

102N06A DE-SERIES SPICE Model

The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3

MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds

is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are

modeled with reversed biased diodes. This provides a varactor type response necessary for a high

power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.

Figure 1 DE-SERIES SPICE Model

This SPICE model may be downloaded as a text file from the DEI web site at

www.directedenergy.com/spice.htm

Net List:

*SYM=POWMOSN

.SUBCKT 102N06A 10 20 30

* TERMINALS: D G S

* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET

M1 1 2 3 3 DMOS L=1U W=1U

RON 5 6 .5

DON 6 2 D1

ROF 5 7 1.0

DOF 2 7 D1

D1CRS 2 8 D2

D2CRS 1 8 D2

CGS 2 3 1.9N

RD 4 1 1.6

DCOS 3 1 D3

RDS 1 3 5.0MEG

LS 3 30 .5N

LD 10 4 1N

LG 20 5 1N

.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)

.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)

.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)

.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)

.ENDS

10 DRAIN

30 SOURCE

20 GATE

Don

Dcos

D2crs

D1crs

Rds

Ron

Doff

Roff

An IXYS Company

2401 Research Blvd., Suite 108

Fort Collins, CO USA 80526

970-493-1901 Fax: 970-493-1903

Email: deiinfo@directedenergy.com

Web: http://www.directedenergy.com

Doc #9200-0224 Rev 3