
IGBT Module
Characteristics
1MBH15D-060
Gate resistance : RG (Ω)
Switching time vs. RG
VCC=300V, IC=15A, VGE=±15V, Tj=25°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Gate resistance : RG (Ω)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time vs. RG
VCC=300V, IC=15A, VGE=±15V, Tj=125°C
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : VCE (V)
Gate charge : Qg (nc)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : Cies, Coes, Cres (nF)
Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V) Gate voltage : VGE (V)
Short circuit current : ISC (A)
Gate-Emitter voltage : VGE (V)
Reverse Biased Safe Operating Area
+VGE=15V, -VGE 15V, Tj 125°C, RG 16Ω
=
<=
<=
>Typical short circuit capability
VCC=400V, RG=16Ω, Tj=125°C,
Short circuit time : tSC (µs)