2008. 6. 18 1/2
SEMICONDUCTOR
TECHNICAL DATA
1N4007G
General Passivated Junction Rectifier
Revision No : 0
FEATURES
·Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
·High temperature metallurgically bonded construction.
·Cavity-free glass passivated junction.
·Capable of meeting environmental standards of MIL-S-19500.
·1.0 Ampere operation at TA=75℃with no thermal runaway
·Typical IRless than 0.1μA.
·High temperature soldering guaranteed:
350℃/10 seconds, 0.375 (9.5mm) lead length, 5 Ibs. (2.3kg) tension.
APPLICATIONS
·General purpose rectification of power supply application
·Consumer & automotive application
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 1000 V
RMS Voltage VRMS 700 V
DC Blocking Voltage VDC 1000 V
Average Forward Rectified Current IF(AV)*1A
Peak forward surge current 8.3mS single
half sine-wave superimposed on rated
load (JEDEC Method) Ta=50℃
IFSM 30 A
Operation Junction Tj-55～150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note 1) Thermal resistance from junction to ambient at 0.375 (9.5mm) lead length P.C.B mounted.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VFIF=1A - - 1.1 V
Leakage Current IR
VRRM=1000V - - 5.0 μA
VRRM=1000V, Ta=125℃- - 50
Reverse Recovery Time trr IF=0.5A, IR=1.0A, IRR=0.25A - 1.0 - μS
Junction Capacitance CjVRM=4.0V, f=1MHz - 8 - pF
Thermal Resistance
Rth(j-a) Junction to ambient - 55 - ℃/W
Rth(j-l) Junction to lead - 25 -
* 0.375 (9.5mm) lead length at Ta= 50℃
2008. 6. 18 2/2
1N4007G
Revision No : 0
