RB751V-40WS
200mW, Low
V
FSMD Schottky Barrier Diod
e
Small Signal Diode
Surface device type mounting
Moisture sensitivity level 1
Pb free version and RoHS compliant
Min Max Min Max
Case : Flat lead SOD-323F small outline plastic package 1.15 1.40 0.045 0.055
2.30 2.80 0.091 0.110
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.10 0.031 0.043
0.05 0.15 0.002 0.006
Package Part No. Packing
SOD-323F RB751V-40WS RR 3K / 7" Reel
SOD-323F RB751V-40WS RRG 3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Maximum Ratings Value Units
Notes: 1. Test Condition : 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method)
2. ESD sensitive product hankling required.
IO
IFSM
TSTG
200 mW
Unit (inch)
S8
A
B
Suggested PAD Layou
t
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Dimensions Unit (mm)
Ordering Information
Polarity : Indicated by cathode band
Marking
S8
Weight :4.6 ± 0.5 mg
Storage Temperature Range
PD
VRRM
Thermal Resistance (Junction to Ambient)
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Average Forward Current
RθJA
Rating at 25°C ambient temperature unless otherwise specified.
SOD-323F
Pin Configuration
C
D
E
F
Low power loss, high current capability, low VF, low IR
Marking Code : S8
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
High temperature soldering guaranteed: 260°C/10s
Non-Repetitive Peak Forward Surge Current (Note 1)
VR
Type Number
Power Dissipation
Symbol
-40~125
125
V
40
30
mA30
V
may vary despending on application.
A
°C/W
°C
Junction Temperature TJ°C
3. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
0.2
500
Dimensions Value (in mm)
X
X1
Y
0.710
2.900
0.403
CA
B
D
E
F
Version : B10
RB751V-40WS
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Electrical Characteristics
Junction Capacitance
Tape & Reel specification
Dimension(mm)
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
W1 14.4 Max.
Overall tape thickness T 0.6 Max.
Tape width
Reel width
W 8.30 Max.
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center P1
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
F
P0
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Item
Carrier depth
D
A
D1
Max
0.5
Symbol
K
1.75 ±0.10
2.40 Max.
1.50 +0.10
D2
178 ± 1
50 Min.
13.0 ± 0.5
E
Units
Forward Voltage VF- 0.37 V
Type Number Symbol Typical
Reverse Leakage Current IR-
IF=1.0mA
VR= 30V uA
VR=1V, f=1.0MHz CJ2-pF
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1D2
A
UserDirectionofFeed
Version : B10
RB751V-40WS
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Characteristic Curves
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
IF Forward Current (mA)
FIG 2 Admissible Power Dissipation Curve
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140
Power Dissipation (mW)
VF Forward Voltage (V) Ambient Tempeatature (oC)
Reverse Voltage (V)
FIG 1 Typical Forward Characteristics
FIG 3 Typical Junction Capacitance
0
1
2
3
4
5
02468101214
Junction Capacitance(pF)
Ta=25oC
10
100
1000
10000
0 5 10 15 20 25 30 3
5
IR Leakage Current (nA)
FIG. 4 Typical Reverse Characteristics
Ta=25o
Ta=125o
Reverse Voltage (V)
Version : B10
