MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT Features * * * * * * Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. PIN 1 + CASE PIN 2 PIN 3 1 2 3 TO-3P/TO-247AD Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter Units 3035PT 3045PT 3050PT 3060PT 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 200 A -65 to +175 C Operating Junction Temperature -65 to +150 C Value Units Tstg TJ 30 V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 3.0 W RJL Thermal Resistance, Junction to Lead 1.4 C/W Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter 3035PT VF IR IRRM Forward Voltage IF = 20 A, TC = 25C IF = 20 A, TC = 125C IF = 30 A, TC = 25C IF = 30 A, TC = 125C Reverse Current @ rated VR TA = 25C TA = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 3045PT Units 3050PT 3060PT 0.60 0.76 0.72 0.75 0.65 - V V V V 1.0 60 5.0 100 mA mA 1.0 0.5 A MBR3035PT - MBR3060PT, Rev. C (continued) 30 MBR3035PT-MBR3045PT 24 MBR3050PT-MBR3060PT 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 Ambient Temperature [C] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 150 100 50 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 MBR3035PT-MBR3045PT 10 10 Reverse Current, IR [mA] Forward Current, IF [A] 200 50 TA = 25 C T A = 150 C MBR3050PT-MBR3060PT 1 MBR3035PT-MBR3045PT 0.1 S Pulse Width = 300 2% Duty Cycle 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1 2000 MBR3035PT-MBR3045PT 1000 MBR3050PT-MBR3060PT 500 200 100 0.1 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 100 TA = 75 C 0.1 MBR3035PT-MBR3045PT 0.01 TA = 25 C MBR3050PT-MBR3060PT 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [C/W] 5000 T A = 125 C MBR3050PT-MBR3060PT 1 0.001 1.2 Figure 3. Forward Voltage Characteristics Total Capacitance, CT [pF] 250 Figure 2. Non-Repetitive Surge Current 50 0.01 300 100 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR3035PT - MBR3060PT, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4