MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT, Rev. C
2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 3.0 W
RθJL Thermal Resistance, Junction to Lead 1.4 °C/W
Symbol
Parameter
Device
Units
3035PT 3045PT 3050PT 3060PT
VF Forward Voltage IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
-
0.60
0.76
0.72
0.75
0.65
-
-
V
V
V
V
IR Reverse Current @ rated VR TA = 25°C
T
A = 125°C 1.0
60 5.0
100 mA
mA
IRRM Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz 1.0 0.5 A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
Thermal Characteristics
Symbol
Parameter
Value
Units
3035PT 3045PT 3050PT 3060PT
VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V
IF(AV) Average Rectified Forward Current 30 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 200 A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +150 °C
TO-3P/TO-247AD
+
CASE
PIN 2
PIN 3
PIN 1
123
MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT, Rev. C
2001 Fairchild Semiconductor Corporation
Schottky Rectifier
(continued)
Typical Characteristics
0 25 50 75 100 125 150 175
0
6
12
18
24
30
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60 H Z
RESISTIVE OR
INDUCTI VE LOAD
.375" (9.00mm) LOAD
LENGTHS
MBR30 35PT-MBR3045PT
MBR30 50PT-MBR3060PT
0.01 0.1 1 10 100
0.1
1
10
100
Pulse Duration [s]
Transient Thermal Impedance [ºC/W]
12 51020 50100
0
50
100
150
200
250
300
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.1 1 10 100
100
200
500
1000
2000
5000
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
MBR30 35PT-MBR3045PT
MBR30 50PT-MBR3060PT
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Widt h = 300µ
µµ
µS
2% Duty Cycle
T = 25 C
º
A
T = 15 0 C
º
A
MBR30 35PT-MBR3045 PT
MBR30 50PT-MBR3060 PT
0 20406080100120140
0.001
0.01
0.1
1
10
50
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 75 C
º
A
T = 12 5 C
º
A
MBR30 35PT-MBR3045PT
MBR30 50PT-MBR3060PT
MBR30 50PT-MBR3060PT
MBR30 35PT-MBR3045PT
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™