Note: Pins 1 & 2 must be electrically
connected at the printed circuit board.
DS30141 Rev. 4 - 3 1 of 3 MBRM5100
www.diodes.com ã Diodes Incorporated
MBRM5100
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·Case: POWERMITEâ3
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Polarity: See Diagram
·Marking: See Page 3
·Ordering Information: See Page 3
·Weight: 0.072 grams (approximate)
Mechanical Data
B
C
D
E
G
JH
K
L
M
A
P
12
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT
S
INK
C
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
RMS Reverse Voltage VR(RMS) 70 V
Average Rectified Output Current (See also figure 5) IO5A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@TC = 80°C
IFSM 100 A
Typical Thermal Resistance Junction to Case RqJC 1.2 °C/W
Typical Thermal Resistance Junction to Soldering Point RqJS 2.7 °C/W
Operating Temperature Range Tj-65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
·Guard Ring Die Construction for Transient Protection
·Low Power Loss, High Efficiency
·High Reverse Breakdown Voltage
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Maximum Ratings @ TA = 25°C unless otherwise specified
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 1) V(BR)R 100 ¾¾VIR = 0.2mA
Forward Voltage VF
¾
¾
¾
¾
0.75
0.58
0.84
0.67
0.81
0.64
0.90
0.73
V
IF = 5A, Tj = 25°C
IF = 5A, Tj = 125°C
IF = 10A, Tj = 25°C
IF = 10A, Tj = 125°C
Peak Reverse Current (Note 1) IR¾
¾
0.015
2
0.2
100 mA Tj = 25°C, VR = 100V
Tj = 125°C, VR = 100V
POWERMITEâ3
Dim Min Max
A4.03 4.09
B6.40 6.61
C.864 .914
D1.83 NOM
E1.10 1.14
G.173 .203
H5.01 5.17
J4.37 4.43
K.173 .203
L.71 .77
M.36 .46
P1.73 1.83
All Dimensions in mm
Notes: 1. Short duration test pulse used to minimize self-heating effect.
NOT RECOMMENDED FOR NEW DESIGNS
USE PDS5100
DS30141 Rev. 4 - 3 2 of 3 MBRM5100
www.diodes.com
100
10
1.0
0.1
0.01
00.20.4 0.6 0.8
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V INSTANTANEOUS FORWARD VOLTAGE (V)
F,
Fi
g
.1 T
y
pical Forward Characteristics
T = 100°C
j
T = 125°C
j
T=25°C
j
10
100
1000
10,000
1.0
0.1
020 40 60 100
80
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
T= 125°C
j
T= 100°C
j
T= 75°C
j
T= 25°C
j
0
20
40
60
80
100
1 10 100
I , PEAK F
O
RWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
T=80°C
C
10
100
1000
020 40 60 80 100
C , TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Capacitance vs.
Reverse Volta
g
e
f = 1MHz
NOT RECOMMENDED FOR NEW DESIGNS
USE PDS5100
DS30141 Rev. 4 - 3 3 of 3 MBRM5100
www.diodes.com
0
1.5
3.0
4.5
7
.5
6.0
025 50 75 100 125 150
I , DC FORWARD CURRENT (A)
F
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 5 DC Forward Current Deratin
g
Note 1
Note 3
Note 2
0
0.5
1.0
1.5
2.5
2.0
3.0
3.5
013
24567
P , AVERAGE FORWARD POWER DISSIPATION (W
)
F(AV)
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fi
g
. 6 Forward Power Dissipation
Note 5
Note 4
Notes: 1. TA = TSOLDERING POINT,R
qJS = 2.7°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 100-140°C/W.
4. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 2.
MBRM5100 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW=Weekcode01to52
(K) = Factory Designator
YYWW(K)
MBRM5100
Marking Information
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
MBRM5100-13 POWERMITEâ3 5000/Tape & Reel
Ordering Information (Note 6)
POWERMITE is a registered trademark of Microsemi Corporation.
NOT RECOMMENDED FOR NEW DESIGNS
USE PDS5100
