MMBT4403LT1G Switching Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO -40 Vdc Collector -Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 PD RqJA PD SOT-23 (TO-236) CASE 318 STYLE 6 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2 MARKING DIAGRAM 2T M G G 1 2T = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT4403LT1G SOT-23 (Pb-Free) 3000 Tape & Reel MMBT4403LT3G SOT-23 10,000 Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 8 1 Publication Order Number: MMBT4403LT1/D MMBT4403LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO -40 - Vdc Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) IBEV - -0.1 mAdc Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) ICEX - -0.1 mAdc 30 60 100 100 20 - - - 300 - - - - -0.4 -0.75 -0.75 - -0.95 -1.3 fT 200 - MHz ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) (IC = -500 mAdc, VCE = -2.0 Vdc) (Note 3) (Note 3) Collector -Emitter Saturation Voltage (Note 3) Base -Emitter Saturation Voltage (Note 3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE VCE(sat) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Ccb - 8.5 pF Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb - 30 pF Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie 1.5 15 kW Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10- 4 Small -Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe 60 500 - Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos (VCC = -30 Vdc, VEB = -2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) td - 15 tr - 20 (VCC = -30 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) ts - 225 tf - 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW -16 V 200 W < 20 ns 1.0 kW CS* < 10 pF -16 V 10 to 100 ms, DUTY CYCLE = 2% 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 CS* < 10 p MMBT4403LT1G TRANSIENT CHARACTERISTICS 25C 10 7.0 5.0 100C 100 VCC = 30 V IC/IB = 10 50 3.0 2.0 t, TIME (ns) Q, CHARGE (nC) IC/IB = 10 70 1.0 0.7 0.5 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 QT 0.3 10 QA 0.2 7.0 5.0 0.1 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 20 30 70 200 100 300 500 300 500 IC, COLLECTOR CURRENT (mA) Figure 3. Charge Data Figure 4. Turn-On Time 100 200 70 IC/IB = 10 VCC = 30 V IC/IB = 10 t s, STORAGE TIME (ns) 50 t r , RISE TIME (ns) 50 30 20 10 100 IC/IB = 20 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 7.0 5.0 20 10 20 30 50 70 200 100 300 500 10 20 30 50 70 200 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Rise Time Figure 6. Storage Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 6 4 2 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW IC = 50 mA 100 mA 500 mA 1.0 mA 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 6 0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 3 50k MMBT4403LT1G h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100k MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 50k 20k 10k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 9. Input Impedance 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE ( m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 100 50 20 5.0 2.0 1.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Voltage Feedback Ratio Figure 11. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4403LT1G STATIC CHARACTERISTICS 450 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V h FE , DC CURRENT GAIN 400 350 TJ = 150C 300 250 25C 200 150 100 -55C 50 0.001 0.0001 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 Figure 12. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.2 IC = 1.0 mA 10 mA 100 mA 500 mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 10 1 100 Ib, BASE CURRENT (mA) 0.35 0.5 IC/IB = 10 0.30 0 COEFFICIENT (mV/ C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 13. Collector Saturation Region 0.25 150C 0.20 25C 0.15 0.10 qVC for VCE(sat) 0.5 1.0 1.5 -55C qVS for VBE 2.0 0.05 0 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) 2.5 0.1 0.2 1 Figure 14. Collector-Emitter Saturation Voltage vs. Collector Current 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 15. Temperature Coefficients http://onsemi.com 5 500 MMBT4403LT1G 1.0 1.0 IC/IB = 10 VBE(on), BASE-EMITTER TURN ON VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 0.9 0.8 -55C 0.7 0.6 25C 0.5 0.4 0.3 150C 0.0001 0.001 0.01 0.1 1 VCE = 2.0 V 0.9 -55C 0.8 0.7 25C 0.6 0.5 0.4 150C 0.3 0.2 0.0001 0.001 IC, COLLECTOR CURRENT (A) Figure 16. Base-Emitter Saturation Voltage vs. Collector Current 1 15 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 0.1 Figure 17. Base-Emitter Turn On Voltage vs. Collector Current 40 35 30 25 20 15 10 0.01 IC, COLLECTOR CURRENT (A) 0 1 2 3 4 5 6 13 11 9 7 5 3 0 Veb, EMITTER BASE VOLTAGE (V) 5 10 15 20 25 30 35 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 18. Input Capacitance vs. Emitter Base Voltage Figure 19. Output Capacitance vs. Collector Base Voltage http://onsemi.com 6 40 MMBT4403LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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