©2004 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
SB29003 Rev. A
SB2900 3 High Voltage Transistor
SB29003
High Voltage Transistor
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Symbol Parameter Value Units
V
CBO
Collector-Base V oltage 500 V
V
CEO
Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 300 mA
P
C
Collector Dissipation (T
C
= 25°C) 2 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Conditions Min. Max Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
B
= 0 500 V
BV
CER
Collector-Emitter Breakdown Voltage * I
C
= 1mA, I
B
= 0 400 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 100µA, I
C
= 0 6 V
I
CBO
Collector Cut-off Current V
CB
= 400V, I
E
= 0 0.1 µA
I
CES
Collector Cut-off Current V
CE
= 400V, I
B
= 0 0.5 µA
I
EBO
Emitter Cut-off Current V
EB
= 4V, I
C
= 0 0.1 µA
h
FE
DC Current Gain * V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
40
50
45
40
200
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= 1mA, I
B
= 0.1mA
I
C
= 10mA, I
B
= 1m A
I
C
= 50mA, I
B
= 5m A
0.4
0.5
0.75
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage * I
C
= 10mA, I
B
= 1m A 0.75 V
C
ob
Output Capatitance V
CB
= 20V, I
E
= 0, f = 1MHz 7 pF
1.Base 2.Collector 3.Emitter
1SOT-223
Mar king: 5463003
2www.fairchildsemi.com
SB29003 Rev. A
SB2900 3 High Voltage Transistor
Typ ical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Capacitance
Figure 3. On Voltage Figure 4. Collector Saturation Region
Figure 5. High Frequency Current Gain
1 10 100 1000 10000
-40
-20
0
20
40
60
80
100
120
140
160
V
CE
=10V
h
FE
, DC CURRENT GA IN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
C
ob
C
ib
T
a
=25
o
C
f=1MHz
C
ib
[pF],C
ob
[pF], CAPACITANCE
V
CB
[V], COLL ECTOR-BASE VOLTA GE
0.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
V
CE
(sat)@I
C
/I
B
=10
V
BE
(on) @V
CE
=10V
V
BE
(sat) @I
C
/I
B
=10
T
a
=25
o
C
[V], VOLTA GE
I
C
[mA], COLLECTOR CURRENT
10 100 1000 10000 100000
0.0
0.1
0.2
0.3
0.4
0.5
I
C
=50mA
I
C
=10mAI
C
=1mA
T
a
=25
o
c
V
CE
[V] COLLE CTOR E MITTER VO L TAGE
I
C
[mA], COLLECTOR CU RRENT
0.1 1 10 100 1000
0.1
1
10
100
V
CE
=10V
f=10MHz
T
a
=25
o
C
h
FE
, SMALL SIGNAL CURRENT GAIN
I
C
[mA], COLLECTO R CU RREN T
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SB29003 Rev. A
SB2900 3 High Voltage Transistor
Mechanical Dimens ions
SOT-223
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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SB29003 Rev. A
SB2900 3 High Voltage Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identificatio n Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinue d by Fairchild semiconductor.
The datasheet is printed for reference information only.
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