To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2005 Fairchild Semiconductor Corporation FDD5614P Rev. 1.4
FDD5614P
60V P-Channel PowerTrench® MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V
R
DS(ON) = 130 mΩ @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 3) –15 A
– Pulsed (Note 1a) –45
Power Dissipation for Single Operation (Note 1) 42
(Note 1a) 3.8
PD
(Note 1b) 1.6
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5614P FDD5614P 13’’ 16mm 2500 units
FDD5614P
March 2015
FDD5614P Rev. 1.4
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Av alanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = –30 V, ID = –4.5 A 90 mJ
IAR Maximum Drain-Source Avalanche
Current –4.5 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –49 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –4.5 A
VGS = –4.5 V, ID = –3.9 A
VGS = –10 V,ID = –4.5 A,TJ=125°C
76
99
137
100
130
185
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –3 A 8 S
Dynamic Characteristics
Ciss Input Capacitance 759 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz 39 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 7 14 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 19 34 ns
tf Turn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
12 22 ns
Qg Total Gate Charge 15 24 nC
Qgs Gate–Source Charge 2.5 nC
Qgd Gate–Drain Charge
VDS = –30V, ID = –4.5 A,
VGS = –10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forwar d Current –3.2 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
FDD5614P
FDD5614P Rev. 1.4
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when m ounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
)ON(DS
D
RP
FDD5614P
FDD5614P Rev. 1.4
Typical Characteristics
0
3
6
9
12
15
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
-3.0V
-2.5V
-4.0V -4.5V
VGS = -10V
-3.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0246810
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
-4.5V
-5.0V
-4.0V
-10V
-6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -4.5A
VGS = -10V
0
0.1
0.2
0.3
0.4
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -2.3 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Va riation with
Temperature. Figure 4. On-Resistance Va riation with
Gate-to-Source Voltage.
0
3
6
9
12
15
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA = -55oC
125oC
VDS = -5V 25oC
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD5614P
FDD5614P Rev. 1.4
Typical Characteristics
0
2
4
6
8
10
0481216
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = -4.5A
VDS = -40V
-20V
-30V
0
200
400
600
800
1000
0 102030405060
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
10s 1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTI VE
TRANSIENT THERMAL RESISTANC
E
RθJA(t) = r(t) + RθJA
RθJA = 96°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)t1t2
SINGLE PULSE
0.01
0.02
0.0
5
0.1
0.2
D = 0.
5
Figure 11. Transient T hermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD5614P
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
