SZMMSZ4689T3G - ON Semiconductor

April, 2018 − Rev. 12

1Publication Order Number:

MMSZ4678T1/D

MMSZ4xxxT1G Series,

SZMMSZ4xxxT1G Series

Zener Voltage Regulators

500 mW, Low IZT SOD−123 Surface Mount

Three complete series of Zener diodes are offered in the convenient,

surface mount plastic SOD−123 package. These devices provide a

convenient alternative to the leadless 34−package style.

Features

•500 mW Rating on FR−4 or FR−5 Board

•Wide Zener Reverse Voltage Range − 1.8 V to 43 V

•Low Reverse Current (IZT) − 50 mA

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant*

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Units

Total Power Dissipation on FR−5 Board,

(Note 1) @ TL = 75°C

Derated above 75°C

PD500

6.7

mW/°C

Thermal Resistance, (Note 2)

Junction−to−Ambient

RqJA 340

°C/W

Thermal Resistance, (Note 2)

Junction−to−Lead

RqJL 150

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.

2. Thermal Resistance measurement obtained via infrared Scan Method.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Cathode

Anode

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

DEVICE MARKING INFORMATION

www.onsemi.com

SOD−123

CASE 425

STYLE 1

Device Package Shipping†

ORDERING INFORMATION

MARKING DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMSZ4xxxT1G SOD−123

(Pb−Free)

3,000 /

Tape & Reel

MMSZ4xxxT3G SOD−123

(Pb−Free)

10,000 /

Tape & Reel

xx = Device Code (Refer to page 3)

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

xx M G

SZMMSZ4xxxT1G SOD−123

(Pb−Free)

3,000 /

Tape & Reel

SZMMSZ4xxxT3G SOD−123

(Pb−Free)

10,000 /

Tape & Reel

MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

Product parametric performance is indicated in the Electrical

Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical

Characteristics if operated under different conditions. Zener Voltage Regulator

IZT

MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)

Device*

Device

Marking

Zener Voltage (Note 3) Leakage Current

VZ (Volts) @ IZT IR @ VR

Min Nom Max mAmAVolts

MMSZ4678T1G CC 1.71 1.8 1.89 50 7.5 1

MMSZ4679T1G CD 1.90 2.0 2.10 50 5 1

MMSZ4680T1G CE 2.09 2.2 2.31 50 4 1

MMSZ4681T1G CF 2.28 2.4 2.52 50 2 1

MMSZ4682T1G CH 2.565 2.7 2.835 50 1 1

MMSZ4683T1G CJ 2.85 3.0 3.15 50 0.8 1

MMSZ4684T1G CK 3.13 3.3 3.47 50 7.5 1.5

MMSZ4685T1G CM 3.42 3.6 3.78 50 7.5 2

MMSZ4686T1G CN 3.70 3.9 4.10 50 5 2

MMSZ4687T1G CP 4.09 4.3 4.52 50 4 2

SZMMSZ4687T1G CG6 4.09 4.3 4.52 50 4 2

MMSZ4688T1G CT 4.47 4.7 4.94 50 10 3

MMSZ4689T1G CU 4.85 5.1 5.36 50 10 3

MMSZ4690T1G/T3G CV 5.32 5.6 5.88 50 10 4

MMSZ4691T1G CA 5.89 6.2 6.51 50 10 5

MMSZ4692T1G CX 6.46 6.8 7.14 50 10 5.1

MMSZ4693T1G CY 7.13 7.5 7.88 50 10 5.7

MMSZ4694T1G CZ 7.79 8.2 8.61 50 1 6.2

MMSZ4695T1G DC 8.27 8.7 9.14 50 1 6.6

MMSZ4696T1G DD 8.65 9.1 9.56 50 1 6.9

MMSZ4697T1G DE 9.50 10 10.50 50 1 7.6

MMSZ4698T1G DF 10.45 11 11.55 50 0.05 8.4

MMSZ4699T1G DH 11.40 12 12.60 50 0.05 9.1

MMSZ4700T1G DJ 12.35 13 13.65 50 0.05 9.8

MMSZ4701T1G DK 13.30 14 14.70 50 0.05 10.6

MMSZ4702T1G DM 14.25 15 15.75 50 0.05 11.4

MMSZ4703T1G †DN 15.20 16 16.80 50 0.05 12.1

MMSZ4704T1G DP 16.15 17 17.85 50 0.05 12.9

MMSZ4705T1G DT 17.10 18 18.90 50 0.05 13.6

MMSZ4706T1G DU 18.05 19 19.95 50 0.05 14.4

MMSZ4707T1G DV 19.00 20 21.00 50 0.01 15.2

MMSZ4708T1G DA 20.90 22 23.10 50 0.01 16.7

MMSZ4709T1G DX 22.80 24 25.20 50 0.01 18.2

MMSZ4710T1G DY 23.75 25 26.25 50 0.01 19.0

MMSZ4711T1G †EA 25.65 27 28.35 50 0.01 20.4

MMSZ4712T1G EC 26.60 28 29.40 50 0.01 21.2

MMSZ4713T1G ED 28.50 30 31.50 50 0.01 22.8

MMSZ4714T1G EE 31.35 33 34.65 50 0.01 25.0

MMSZ4715T1G EF 34.20 36 37.80 50 0.01 27.3

MMSZ4716T1G EH 37.05 39 40.95 50 0.01 29.6

MMSZ4717T1G EJ 40.85 43 45.15 50 0.01 32.6

3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.

*Include SZ-prefix devices where applicable.

†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel

MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

-3

-2

-1

1211

98765432

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

VZ @ IZT

1.2

1.0

0.8

0.6

0.4

0.2

01501251007550250

T, TEMPERATURE (5C)

Figure 3. Steady State Power Derating

PD versus TA

PD versus TL

Ppk, PEAK SURGE POWER (WATTS)

0.1

PW, PULSE WIDTH (ms)

Figure 4. Maximum Nonrepetitive Surge Power

1 10 100 1000

1000

100

RECTANGULAR

WAVEFORM, TA = 25°C

TYPICAL TC VALUES

PD, POWER DISSIPATION (WATTS)

100

VZ, NOMINAL ZENER VOLTAGE

Figure 5. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 25°C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

TA = 25°C

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

TA = 25°C

IR, LEAKAGE CURRENT ( A)μ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150°C

+25°C

-55°C

IZ, ZENER CURRENT (mA)

Figure 8. Zener Voltage versus Zener Current

(VZ Up to 12 V)

Figure 9. Zener Voltage versus Zener Current

(12 V to 91 V)

SOD−123

CASE 425−04

ISSUE G

DATE 07 OCT 2009

SCALE 5:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ÂÂÂÂ

DIM MIN NOM MAX

MILLIMETERS INCHES

A0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b0.51 0.61 0.71 0.020

1.60

0.15

0.055D1.40 1.80

E2.54 2.69 2.84 0.100

---

3.68 0.140

L0.25

3.86

0.010

0.046

0.002

0.024

0.063

0.106

0.145

0.053

0.004

0.028

0.071

0.112

0.152

MIN NOM MAX

3.56

---

--- ---

0.006

--- ---

GENERIC

MARKING DIAGRAM*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

*This information is generic. Please refer to device

data sheet for actual part marking. Pb−Free indicator,

“G” or microdot “ G”, may or may not be present.

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

XXXMG

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.22

0.048

ÉÉÉ

0.91

0.036

2.36

0.093

4.19

0.165

ǒmm

inchesǓ

SCALE 10:1

ÉÉÉ

--- ---

q00

10 10

°°° °

(Note: Microdot may be in either location)

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98ASB42927B

ON SEMICONDUCTOR STANDARD

SOD−123

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98ASB42927B

PAGE 2 OF 3

ISSUE REVISION DATE

DCHANGED OWNERSHIP TO ON SEMI. 16 MAR 2000

EADDED NOMINAL VALUES AND SOLDERING FOOTPRINT. REQ. BY H XIAO. 03 AUG 2005

FADDED FOOT ANGLE TO DRAWING. REQ. BY D. TRUHITTE. 14 AUG 2009

GADJUSTED DIMENSION L LABEL TO MORE ACCURATELY REFLECT FOOT

LENGTH. REQ. D. TRUHITTE.

07 OCT 2009

October, 2009 − Rev. 04G

Case Outline Number:

425

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MMSZ4709T1G MMSZ4714T1G SZMMSZ4684T1G SZMMSZ4685T1G SZMMSZ4686T1G SZMMSZ4690T1G

SZMMSZ4691T1G SZMMSZ4692T1G SZMMSZ4693T1G SZMMSZ4696T1G SZMMSZ4702T1G SZMMSZ4703T1G

SZMMSZ4705T1G SZMMSZ4713T1G SZMMSZ4690T3G SZMMSZ4689T1G SZMMSZ4711T3G

SZMMSZ4689T3G SZMMSZ4714T1G SZMMSZ4704T3G MMSZ4693T3G SZMMSZ4715T1G SZMMSZ4707T1G

SZMMSZ4678T1G SZMMSZ4709T1G SZMMSZ4682T1G SZMMSZ4679T1G SZMMSZ4681T1G