PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129 Photon Coupled Isolator H11B255 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The General Electric H11B255 consists of a gallium PASE: Coen Toa tran | MSLETER Te arsenide infrared emitting diode coupled with a silicon vA 39 ao0ie38 peo photo-darlington amplifier in a dual in-line package. FA tT ST TTS | cl 389 sock She (TOP VIEW) s E 200 5.08 4 absolute maximum ratings: (25C) ws | jg [888 eee ee | u y 08 O12! os 305 INFRARED EMITTING DIODES tt Tn debe +3 os = 30: o ; Power Dissipation *90 milliwatts a sears B [99] ugsiess [429 Forward Current (Continuous) 60 ~~ milliamps - Hos Pine oh ah te There shalt be apermonent indication of term Forward Current (Peak) 3 ampere ron 2 (Pulse width 1ysec. 300 P Ps) ae na ge tm eset Reverse Voltage 3 volts or -- 5.rour places. *Derate 1.2mW/C above 25C ambient. TOTAL DEVICE PHOTO-TRANSISTOR Storage Temperature -55 to 150C Power Dissipation **210 milliwatts Operating Temperature -55 to 100C VcEO 55 volts Lead Soldering Time (at 260C) 10 seconds. Vcpo 55 volts Surge Isolation Voltage (Input to Output). VERO 8 volts 1500V (peak) 1060V (Rams) Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output). **Derate 2,.8mW/C above 25C ambient. 950V (peak) 660V (RMs) individual electrical characteristics (25C) one EO EMITTING TYP. | MAX. | UNITS PHOTO-TRANSISTOR MIN.| TYP. |MAX.| UNITS Forward Voltage 1.1 1.5 {volts Breakdown Voltage -Vgryceo } 55 | | volts (Ip = 20mA) (Ic = 100uA, Ip = O) Breakdown Voltage VprycBo | 55 | {volts (Ic = 100pA, Ip = O) Reverse Current - 10 |microamps Breakdown Voltage V(pr)EBO 8 _ volts (Vr = 3V) (Ig = 100A, Ip = O) Collector Dark Current Icgo | 100 |nanoamps (Vcg = 10V, Ip = O) Capacitance 50 _ picofarads Capacitance 2 \picofarads (V = O,f = 1 MHz) (Vcr = 10V,f = 1 MHz) coupled electrical characteristics (25C) MIN, TYP. MAX. UNITS DC Current Transfer Ratio (Ip = 10mA, Veg = SV) 100 _ _ |% Saturation Voltage Collector to Emitter (Ip = 50mA, Ic = 50mA) _ 1.0 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) 100 _ |gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1 MHz) 2 picofarads Switching Speeds: On-Time (Vox = 10V, Ic = 10mA, Ry = 1002) - 125 | microseconds Off-Time (Vox = 10V, Ic = 10mA, Ry = 1002) 100 | microseconds 1295 TYPICAL CHARACTERISTICS 100 5 10 Ww iva x 2 oO - 10 a a E 3 1 . WwW N 3 NORMALIZED TO: 3 Ol Vee = 5V & Ip =10mA 3 F 2 1 2 001 Lo) nH 00at J 10 10 Ip ~INPUT CURRENT - ma 1. OUTPUT CURRENT VS. INPUT CURRENT 1,000 . ~ | 100 {f 2 ay ' 5 0 LF ec a 3 / Of |. a a = S f S . 1. / Ot / 001 0 5 10 1.5 2.0 Vp ~ FORWARD VOLTAGE - VOLTS ., INPUT CHARACTERISTICS 100 LOAD RESISTANCE ion NORMALIZED TO Veg # lov < R, =1000, Lb Tceq? !OmA z Ww a a > oO bE > a E 3 @ to o Ht Ol 0.01 ol ! 10 NORMALIZED SWITCHING SPEED tgt tp tty tty 5. SWITCHING SPEED VS. OUTPUT CURRENT 100 1296 Lego -NORMALIZED OUTPUT CURRENT NORMALIZED TO: Vee = 5V Ip =!10 mA Ta = +25C Toeqg - NORMALIZED OUTPUT CURRENT Of +55 5 100 65 Ty, - AMBIENT TEMPERATURE ~C 2. OUTPUT CURRENT VS. TEMPERATURE NORMALIZED TO: Vee = 5V Ts = (OmA LO 10 100 Vce- COLLECTOR TO EMITTER VOLTAGE - VOLTS 4. OUTPUT CHARACTERISTICS 3 on 3 A 103 102 NORMALIZED TO: Voge = 1OV Ip = 0 Ta = +25C Logo NORMALIZED DARK CURRENT 3 +25 +45 +65 Tay - AMBIENT TEMPERATURE - C +85 +100 6. NORMALIZED DARK CURRENT VS. TEMPERATURE