URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 TM UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. * Industry standard package. * Low intermodulation distortion of -30dBc at 25W (PEP). * Gold Metalization, Gold Bond Wires, Gold-Plated Packages. 3 Package Type 440031 3-50 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-51 TM UPB2025B Maximum Ratings Rating 3 Symbol Value Unit Collector-Emitter Voltage VCEO 26 VDC Collector-Base Voltage VCES 60 VDC Emitter-Base Voltage VEBO 3.0 VDC Collector Current - Continuous IC 4.0 ADC Total Device Dissipation @ TC = 70C Derate above 70C PD 38 0.37 Watts W/C Maximum Junction Temperature TJ 175 C Storage Temperature Range TSTG -60 to +150 C Thermal Characteristics Characteristics Symbol Maximum JC Thermal Resistance, Junction to Case Unit 2.7 C/W Electrical DC Characteristics (TC=25C unless otherwise specified) Rating Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC=120mA, IB=0mA) BVCEO 26 - - Volts Collector-Emitter Breakdown Voltage (IC=60mA, VBE=0V) BVCES 60 - - Volts Collector-Base Breakdown Voltage (IC=50mA, IE=0mA) BVCBO 60 - - Volts Collector-Emitter Leakage Current (VCE=27V, VBE=0) ICES - - 7.0 DC Current Gain (IC=750mA, VCE=5V) hFE 20 - 100 3-51 mA URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-52 TM UPB2025B AC Characteristics (TC=25C unless otherwise specified) Rating Output Capacitance (VCB=12V, IE=0, freq= 1MHz) Symbol Min Typ Max COB 27 - 31 Unit pF 3 RF and Functional Tests (TC=25C unless otherwise specified, UltraRF Broadband Fixture) Rating Symbol Min Typ Max Unit Power Gain, Single Tone (VCE=24V, ICQ=250mA, POUT=25W, f=1990 MHz) Gp 7.0 - - dB Collector Efficiency (VCE=24V, ICQ=250mA, POUT=25W, f=1990 MHz) 40 45 - % IMD - -35 -30 dBc VSWR 3:1 - - Intermodulation Distortion, Two Tone (VCE=24V, ICQ=250mA, POUT=25W PEP f1=1990 MHz, f2=1990.1MHz) Load Mismatch Tolerance (VDS=24V, IDQ=250mA, POUT=25W, f=1990 MHz) 3-52 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-53 TM UPB2025B Fixture Drawings 3 3-53 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-54 TM UPB2025B Power Gain vs Output Power 13 12 GPE, Gain (dB) 11 10 ICQ = 375 mA 9 250 mA 3 8 7 125 mA 6 VCC = 24V f = 1990MHz 5 4 10 15 20 25 30 35 40 45 50 POUT, Output Power (dBm) Intermodulation Distortion vs Output Power -20 IMD, Intermodulation Distortion (dBc) -25 -30 -35 3rd Order -40 -45 5th -50 -55 7th VCC = 24 V f1 = 1990.0 MHz f2 = 1990.1 MHz ICQ = 250 mA -60 -65 -70 15 20 25 30 35 40 45 50 POUT, Output Power (dBm), PEP 3-54 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-55 TM UPB2025B Intermodulation Distortion vs Output Power IMD3, 3rd Order Intermodulation Distortion (dBc) -20 3 -30 -40 ICQ = 125 mA 250 mA -50 375 mA -60 VCC = 24 V f1 = 1990.0 MHz f2 = 1990.1 MHz -70 15 20 25 30 35 40 45 50 POUT, Output Power (dBm), PEP Power Gain & Efficiency vs Output Power 60 10 GPE 50 8 40 7 30 6 20 VCC = 24 V ICQ = 250 mA f = 1990 MHz 5 10 4 0 10 15 20 25 30 35 POUT, Output Power (dBm) 3-55 40 45 50 , Efficiency (%) GPE, Power Gain (dB) 9 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-56 TM UPB2025B Power Gain and Efficiency vs Frequency 10.00 70.0 GPE, Power Gain (dB) 9.00 \ GPE 8.00 3 60.0 7.00 55.0 6.00 50.0 VCC = 24 V ICQ = 250 mA POUT = 44.8 dBm 5.00 1930 1940 1950 1960 1970 1980 45.0 1990 f, Frequency (MHz) VCC = 24V lCQ = 250mA Frequency (MHz) 1930 1960 1990 Z Source Z Load .85 - j2.34 .82 - j2.45 .80 - j2.55 .79 - j4.06 .85 - j4.10 .91 - j4.12 3-56 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-57 TM UPB2025B DC Safe Operating Area 4.50 4.00 IC, Collector Current (A) 3.50 3 3.00 TF = 75oC 2.50 100oC 2.00 1.50 TJ = 175oC 1.00 0.50 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 VCE, Collector Voltage (V) Mean Time To Failure MTF, Mean Time To Failure (Hrs) 10000000 1000000 IC = 2 A 100000 4A 6A 10000 1000 120 140 160 180 TJ , Junction Temperature ( o C ) 3-57 200 220