™
3-50
UPB2025B
25W, 2.0GHz, 24V Broadband RF Power
NPN Bipolar Transistor
Description
This device is designed for base station applications up
to frequencies of 2.0GHz. Rated with a minimum output
power of 25W, it is ideal for CDMA, TDMA, GSM, FM,
Single or Multi-Carrier Power Amplifiers in Class A or
AB operation.
• Industry standard package.
• Low intermodulation distortion of
–30dBc at 25W (PEP).
• Gold Metalization, Gold Bond Wires,
Gold-Plated Packages.
3
Package Type 440031
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Electrical DC Characteristics (TC=25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage BVCEO 26 - - Volts
(IC=120mA, IB=0mA)
Collector-Emitter Breakdown Voltage BVCES 60 - - Volts
(IC=60mA, VBE=0V)
Collector-Base Breakdown Voltage BVCBO 60 - - Volts
(IC=50mA, IE=0mA)
Collector-Emitter Leakage Current ICES - - 7.0 mA
(VCE=27V, VBE=0)
DC Current Gain hFE 20 - 100
(IC=750mA, VCE=5V)
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 26 VDC
Collector-Base Voltage VCES 60 VDC
Emitter-Base Voltage VEBO 3.0 VDC
Collector Current - Continuous IC4.0 ADC
Total Device Dissipation @ TC = 70°C PD38 Watts
Derate above 70°C 0.37 W/°C
Maximum Junction Temperature TJ175 °C
Storage Temperature Range TSTG -60 to +150 °C
Thermal Characteristics
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction to Case ΘJC 2.7 °C/W
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AC Characteristics (TC=25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Output Capacitance COB 27 - 31 pF
(VCB=12V, IE=0, freq= 1MHz)
RF and Functional Tests (TC=25°C unless otherwise specified, UltraRF Broadband Fixture)
Rating Symbol Min Typ Max Unit
Power Gain, Single Tone Gp7.0 - - dB
(VCE=24V, ICQ=250mA, POUT=25W,
f=1990 MHz)
Collector Efficiency η40 45 - %
(VCE=24V, ICQ=250mA, POUT=25W,
f=1990 MHz)
Intermodulation Distortion, Two Tone IMD - -35 -30 dBc
(VCE=24V, ICQ=250mA, POUT=25W PEP
f1=1990 MHz, f2=1990.1MHz)
Load Mismatch Tolerance VSWR 3:1 - -
(VDS=24V, IDQ=250mA, POUT=25W,
f=1990 MHz)
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Fixture Drawings
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Power Gain vs Output Power
4
5
6
7
8
9
10
11
12
13
10 15 20 25 30 35 40 45 50
POUT, Output Power (dBm)
GPE, Gain (dB)
125 mA
250 mA
ICQ = 375 mA
VCC = 24V
f = 1990MHz
Intermodulation Distortion vs Output Power
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
15 20 25 30 35 40 45 50
POUT, Output Power (dBm), PEP
IMD, Intermodulation Distortion (dBc)
3rd Order
5th
7th VCC = 24 V
f1 = 1990.0 MHz
f2 = 1990.1 MHz
ICQ = 250 mA
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Intermodulation Distortion vs Output Power
-70
-60
-50
-40
-30
-20
15 20 25 30 35 40 45 50
POUT, Output Power (dBm), PEP
IMD3, 3rd Order Intermodulation Distortion (dBc)
ICQ = 125 mA
250 mA
VCC = 24 V
f1 = 1990.0 MHz
f2 = 1990.1 MHz
375 mA
Power Gain & Efficiency vs Output Power
4
5
6
7
8
9
10
10 15 20 25 30 35 40 45 50
POUT, Output Power (dBm)
GPE, Power Gain (dB)
0
10
20
30
40
50
60
η, Efficiency (%)
VCC = 24 V
ICQ = 250 mA
f = 1990 MHz
GPE
η
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Power Gain and Efficiency vs Frequency
5.00
6.00
7.00
8.00
9.00
10.00
1930 1940 1950 1960 1970 1980 1990
f, Frequency (MHz)
GPE, Power Gain (dB)
45.0
50.0
55.0
60.0
\
70.0
GPE
VCC = 24 V
ICQ = 250 mA
POUT = 44.8 dBm
η
Frequency (MHz) Z Source Z Load
1930 .85 - j2.34 .79 - j4.06
1960 .82 - j2.45 .85 - j4.10
1990 .80 - j2.55 .91 - j4.12
VCC = 24V
lCQ = 250mA
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DC Safe Operating Area
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
0.0 5.0 10.0 15.0 20.0 25.0 30.0
VCE, Collector Voltage (V)
IC, Collector Current (A)
TF = 75oC
100oC
TJ = 175oC
Mean Time To F ailure
1000
10000
100000
1000000
10000000
120 140 160 180 200 220
TJ, Junction Temperature ( oC )
MTF, Mean Time To Failure (Hrs)
4 A
6 A
IC = 2 A
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