International Rectifier PD-9.1009 IRF730S HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Surface Mount Available in Tape & Reel Dynamic dv/ct Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Voss = 400V Rpg(on) = 1.00 on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings SMD-220 | Parameter Max. Units Ip @ Tce =25C | Continuous Drain Current, Ves @ 10 V 65 Ip @ Tc = 100C | Continuous Drain Current, Ves @ 10 V 3.5 A Ibm Pulsed Drain Current 22 Pp @ Tc = 25C _| Power Dissipation 74 W Pp @ Ta=25C | Power Dissipation (PCB Mount)** 3.1 Linear Derating Factor 0.59 WEC Linear Derating Factor (PCB Mount)** 0.025 Ves Gate-to-Source Voltage 120 v Eas Single Pulse Avalanche Energy @ 290 mJ lar Avalanche Current 5.5 A Ear Repetitive Avalanche Energy 74 mJ dv/dt Peak Diode Recovery dv/dt @ 40 Vins Tu, Tste i Junction and Storage Temperature Range +55 to +150 C | Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Rac Junction-to-Case _ = 1.7 Rata Junction-to-Ambient (PCB mount)** 40 C | Raia Junction-to-Ambient _ 62 | ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.IRF730S Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units | Test Conditions Viprypss Drain-to-Source Breakdown Voltage 400 _ _ Vs | Vas=0V, Ip= 250nA AVieryoss/ATy| Breakdown Voltage Temp. Coefficient | | 0.54 | | VC | Reference to 25C, Ip= 1mA Roston) Static Drain-to-Source On-Resistance _ _ 1.0 Q | Ves=10V, Ip=3.3A Vasith) Gate Threshold Voltage 2.0 _ 4.0 V_ | Vos=Ves, [p= 250A Ots Forward Transconductance 29 = = S| Vps=50V, Ip=3.3A loss Drain-to-Source Leakage Current 2 pA Vos=400V, Ves=0V _ 250 Vps=320V, Ves=0V, Ty=125C less Gate-to-Source Forward Leakage _ _ 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge = 38 Ip=3.5A Qgs Gate-to-Source Charge _ | 57 | nC | Vps=320V Qag Gate-to-Drain ("Miller") Charge _ _ 22 Ves=10V See Fig. 6 and 13 tdton} Turn-On Delay Time = 10 = Vpp=200V tr Rise Time 16 = ng In=3.5A ta(otf Turn-Off Delay Time _ 38 -! Re=122 tr Fall Time _ 14 _ Ro=57Q See Figure 10 @ Lo Internal Drain Inductance | 45 5 Ban (O2en) ; nH | from package (ee Ls Internal Source Inductance ;, 75) and center of die contact 8 Ciss Input Capacitance _ 700 _ Vaes=0V Coss Output Capacitance | 170} PF | Vps= 25V Crss Reverse Transfer Capacitance _ 64 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 55 MOSFET symbol 5 (Body Diode) , A showing the Ism Pulsed Source Current _ _ 20 integral reverse 6 (Body Diode) i p-n junction diode. 8 Vsp Diode Forward Voltage _ _ 1.6 Vi Ty=25C, Is=5.5A, Vas=0V tre Reverse Recovery Time _ 270 | 530 ns | Ty=25C, tr=3.5A Qir Reverse Recovery Charge _ 1.8 2.2 nC |di/dt=100A/us @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by @ Isos5.5A, di/dts90A/us, VopsViBR)DSs, max. junction temperature (See Figure 11) Tys150C @ Vop=50V, starting Ty=25C, L=16mH @ Pulse width < 300 ps; duty cycle <2%. Re=25Q, las=5.5A (See Figure 12)Ip, Drain Current (Amps) Ip, Drain Current (Amps) 4.5V 20us WIDTH Te = 259 40-4 10! Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = SOV 20us PULSE WIDTH 4 5 8 8 10 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Roson): Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRF730S 109 20us PULSE WIDTH 4 Te = 150C son! 309 so! Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C 3.0 2.5 2.0 1.5 1.0 0.5 Veg = 10V Q -60 -40 -20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF730S 4500 f = 1MHz Cyg + Cgg, Cag SHORTED S c 2 go Q 4200 = Cas + < om iL & & Ss @ 300 8 8 3 3 S & 600 % g = Oo 2 oO 300 o a o > FOR TEST CIACUIT 0 SEE FIGURE 13 400 10! 0 10 20 30 40 50 Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage Isp, Reverse Drain Current (Amps) Ip, Drain Current (Amps) Vgs = OV SINGLE 2ULSE 40) 0.4 = > 4 0.6 0. 0.8 0. 1.0 4.1 1.2 0.22 5 4 2 5 +42 5 yp2e@ 5 1632 5 404 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageIRF730S Ip, Drain Current (Amps) 25 Fig 9. Fig 11. Thermal Response (Zg jc) 50 75 100 Tc, Case Temperature (C) 1 Maximum Drain Current Vs. Case Temperature 1075 1074 4073 NOTES: 4. DUTY FACTOR, Orty/to 2. PEAK T x 107? Rp Vbs D.U.T. 1 Vpp \itov Pulse Width < 1s Duty Factors 0.1% L Fig 10a. Switching Time Test Circuit VDs 90% \_/ r | 0% | 10% A! Ves tdfon) tr | | | | ! TA Le talot) tf Fig 10b. Switching Time Waveforms O.4 1 t;, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF730S Vary tp to obtain Vos required las Vps lag a Fig 12b. Unclamped Inductive Waveforms Qes ~ Qep Charge Fig 13a. Basic Gate Charge Waveform Eas, Single Pulse Energy (mJ) Ypo = SOV 25 50 75 100 225 250 : Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Ig Ip Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Part Marking Information Appendix D: Tape & Reel Information International Rectifier