BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
Document No. P12808EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
DATA SHEET
The mark shows major revised points.
DESCRIPTION
The
PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The
PC8112TB features
high impedance output of open collector. Similar ICs of the
PC2757TB and
PC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute
to reduce your system size.
The
PC8112TB is manufactured using the 20 GHz fT NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference)
IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference)
• Similar conversion gain to
PC2757 and lower noise figure than
PC2758
• Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference)
RFLO = –55 dB@fRFin = 1.9 GHz (reference)
• High linearity : PO(sat) = –2.5 dBm TYP.@fRFin = 900 MHz
PO(sat) = –3 dBm TYP.@fRFin = 1.9 GHz
• Low current consumption : ICC = 8.5 mA TYP.
• Supply voltage : VCC = 2.7 to 3.3 V
• High-density surface mounting : 6-pin super minimold package
APPLICATIONS
• 1.5 to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number
Package
Markings
Supplying Form
PC8112TB-E3-A
6-pin super minimold
C2K
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
Remark To order evaluation samples, please contact your local nearby sales office (Part number for sample
order:
PC8112TB-A).
Caution Electro-static sensitive devices
μ
PC8112TB
CONTENTS
1. PIN CONNECTIONS ............................................................................................................................................ 3
2. PRODUCT LINE-UP ............................................................................................................................................. 3
3. INTERNAL BLOCK DIAGRAM ........................................................................................................................... 4
4. SYSTEM APPLICATION EXAMPLE ................................................................................................................... 4
5. PIN EXPLANATION ............................................................................................................................................. 5
6. ABSOLUTE MAXIMUM RATINGS ...................................................................................................................... 6
7. RECOMMENDED OPERAT ING RANGE ............................................................................................................ 6
8. ELECTRICAL CHARACTERISTICS .................................................................................................................... 6
9. STANDARD CHARACTERISTICS FOR REFERENCE ..................................................................................... 7
10. TEST CIRCUIT ..................................................................................................................................................... 7
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD ................................. 8
12. TYPICAL CHARACTERISTICS ........................................................................................................................... 9
12.1 Without Signals .......................................................................................................................................... 9
12.2 IF 100 MHz Matching (fRFin = 900 MHz) .....................................................................................................10
12.3 IF 100 MHz Matching (fRFin = 1.5 GHz) ......................................................................................................12
12.4 IF 240 MHz Matching .................................................................................................................................14
13. S-PARAMETERS .................................................................................................................................................16
13.1 Calibrated on pin of DUT ..........................................................................................................................16
13.2 IF Output Matching ....................................................................................................................................17
14. PACKAGE DIMENSIONS .....................................................................................................................................18
15. NOTE ON CORRECT USE .................................................................................................................................19
16. RECOMMENDED SOLDERING CONDITIONS ...................................................................................................19
Data Sheet P12808EJ3V0DS00
2
μ
PC8112TB
1. PIN CONNECTIONS Pin No. Pin Name
1 RFinput
2 GND
3 LOinput
4 PS
5 VCC
6 IFoutput
3
2
1
4
5
6
(Top View) (Bottom View)
4
5
6
3
2
1
C2K
2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50 Ω)
Items No RF
ICC
(mA)
900 MHz
SSB · NF
(dB)
1.5 GHz
SSB · NF
(dB)
1.9 GHz
SSB · NF
(dB)
900 MHz
CG
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
μ
PC2757T 5.6 10 10 13 15 15 13 −14 −14 −12
μ
PC2757TB
μ
PC2758T 11 9 10 13 19 18 17 −13 −12 −11
μ
PC2758TB
μ
PC8112T 8.5 9 11 11 15 13 13 −10 −9 −7
μ
PC8112TB
Items 900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
IF Output
Configuration Package
μ
PC2757T −3 − −8 – – – Emitter follower 6-pin minimold
μ
PC2757TB 6-pin super minimold
μ
PC2758T +1
− −4 – – – 6-pin minimold
μ
PC2758TB 6-pin super minimold
μ
PC8112T −2.5 −3 −3 −80 −57 −55 Open collector 6-pin minimold
μ
PC8112TB 6-pin super minimold
Part
Numbe
r
Part
Numbe
r
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Cautions 1. The
μ
PC2757 and
μ
PC2758’s IIP3 are calculated with
Δ
IM3 = 3 which is the same IM3
inclination as
μ
PC8112. On the other hand, OIP3 of Standard characterisitcs in page 7 is
cross point IP.
2. This document is to be specified for
μ
PC8112TB. The other part number mentioned in this
document should be referred to the data sheet of each part number.
Data Sheet P12808EJ3V0DS00 3
μ
PC8112TB
3. INTERNAL BLOCK DIAGRAM
RFinput IFoutput
LOinput
4. SYSTEM APPLICATION EXAMPLE
Digital cordless phone
I
Q
DEMOD. I
Q
÷N PLL PLL
0˚
90˚
VCO
PA
TX
SW
RX
Low noise Tr. PC8112TB
μ
φ
Data Sheet P12808EJ3V0DS00
4
μ
PC8112TB
5. PIN EXPLANATION
Pin
No. Pin
Name
Applied
Voltage
(V)
Pin Voltage
(V) Function and Application Internal Equivalent Circuit
1 RFinput − 1.2 RF input pin of mixer. This
mixer is designed as double
balanced type.
This pin should be externally
coupled to front stage with DC cut
capacitor.
2 GND GND − Ground pin. This pin must be
connected to the system ground.
Form the ground pattern as wide
as possible and the truck length
as short as possible to minimize
ground impedance.
5 VCC 2.7 to 3.3 − Supply voltage pin.
This pin should be connected with
bypass capacitor (example: 1 000
pf) to minimize ground
impedance.
6 IFoutput as same as
VCC voltage
through
external
inductor
− IF output pin. This output is
configured with open collector of
high impedance. This pin should
be externally equipped with
matching circuit of inductor should
be selected as small resistance
and high frequency use.
3 LOinput − 1.4 Input pin of local amplifier. This
amplifier is designed as differen-
tial type.
This pin should be externally
coupled to local signal source
with DC cut capacitor.
Recommendable input level is
−15 to 0 dBm.
4 PS VCC or GND
Power save control pin. This pin
can control ON/OFF operation
with bias as follows;
−
Bias: V Operation
VPS ≥ 2.5 ON
0 to 0.5 OFF
Data Sheet P12808EJ3V0DS00 5
μ
PC8112TB
6. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
Supply Voltage VCC TA = +25°C, 5 pin and 6 pin 3.6 V
Total Circuit Current ICC TA = +25°C 77.7 mA
Total Power Dissipation PD Mounted on double sided copper clad 50 × 50 ×
1.6 mm epoxy glass PWB (TA = +85°C) 270 mW
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
7. RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit Remarks
Supply Voltage VCC 2.7 3.0 3.3 V 5 pin and 6 pin should be applied
to same voltage.
Operating Ambient Temperature TA −40 +25 +85 °C
LO Input Power PLOin −15 −10 0 dBm Zs = 50 Ω
RF Input Frequency fRFin 0.8 1.9 2.0 GHz
IF Output Frequency fIFout 100 250 300 MHz With external matching
8. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = VPS = VIFout
= 3.0 V, PLOin = −10 dBm, ZS = ZL = 50 Ω)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Circuit Current ICC No input signal 4.9 8.5 11.7 mA
Circuit Current at Power Save
Mode ICC(PS) VCC = 3.0 V, VPS = 0.5 V − − 0.1
μ
A
Conversion Gain CG fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz 11.5
9.5 15
13 17.5
15.5 dB
SSB Noise Figure SSB•NF fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−
− 9.0
11.2 11
13.2 dB
Saturated Output Power Po(sat) fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
(PRFin = −10 dBm each)
−6.5
−7
−2.5
−3
−
− dBm
Data Sheet P12808EJ3V0DS00
6
μ
PC8112TB
9. STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VCC = VPS = VIFout = 3.0 V, PLOin = −10 dBm, ZS = ZL = 50 Ω)
Parameter Symbol Test Conditions Reference Unit
Conversion Gain CG fRFin = 1.5 GHz, fLOin = 1.6 GHz 13 dB
SSB Noise Figure SSB•NF fRFin = 1.5 GHz, fLOin = 1.6 GHz 11 dB
LO Leakage at RF pin LORF fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−45
−46
−45
dB
RF Leakage at LO pin RFLO fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−80
−57
−55
dB
LO Leakage at IF pin LOif fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−32
−33
−30
dB
3rd Order Distortion Input
Intercept PointNote IIP3 fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
−10
−9
−7
dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP3 = (
Δ
IM3 × Pin + CG − IM3) ÷ (
Δ
IM3 − 1) (dBm) [
Δ
IM3: IM3 curve inclination in linear range]
μ
PC8112’s
Δ
IM3 is closer to 3 (theoretical inclination) than
μ
PC2757 and
μ
PC2758 of conventional ICs.
10. TEST CIRCUIT
1 000 pF
50 Ω
C
1
3
2
1
50 Ω
(Top View)
4
5
6
LOinput
GND
RFinput
PS
V
CC
IFoutput
POWER
SAVE
3 V
L
1
C
6
50 Ω
1 000 pF
C
2
C
4,
C
5
Spectrum Analyzer
Signal Generator
Signal Generator
Data Sheet P12808EJ3V0DS00 7
μ
PC8112TB
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
LO
input
RF
input
PS bias
→
Voltage supply
IF
output
Short
Chip
Short Chip = 1 000 pF
GND
C
2
C
1
V
CC
PS
C
4
C
5
L
1
C
6
C
3
Component Number IF 100 MHz Matching IF 240 MHz Matching Remarks
C1 to C5 1 000 pF 1 000 pF CHIP C
C6 5 pF 2 pF CHIP C
L1 330 nH 84 nH CHIP L
EVALUATION BOARD CHARACTERS AND NOTE
(1) 35
μ
m thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board
(2) Back side: GND pattern
(3) Solder plated patterns
(4) {: Through holes
(5) To mount C6, pattern should be cut.
Caution Test circuit or print pattern in this sheet is for testing IC characteristics. They are not an
application circuit or recommended system circuit.
In the case of actual system application, external circuits including print pattern and matching
circuit constant of output port should be designed in accordance with IC’s S-parameters and
environme ntal compone nts.
Remark External circuits of the IC can be referred to following application notes.
• USAGE AND APPLICATION CHARACTERISTICS OF
μ
PC2757,
μ
PC2758, AND
μ
PC8112, 3-V
POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION
(Document No. P11997E)
Data Sheet P12808EJ3V0DS00
8
μ
PC8112TB
12. TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified, measured on test
circuits)
12.1 Without Signals
12
10
8
6
4
2
0
12
10
8
6
4
2
0
12
10
8
6
4
2
0
Circuit Current I
CC
(mA)
Circuit Current I
CC
(mA)
Circuit Current I
CC
(mA)
1
0234
Supply Voltage V
CC
(V)
1
0234
PS Pin Applied Voltage V
PS
(V)
1
0234
Supply Voltage V
CC
(V)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs.
PS PIN APPLIED VOLTAGE
V
CC
= V
PS
= V
IFout
V
CC
= V
PS
= V
IFout
V
CC
= V
IFout
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
Data Sheet P12808EJ3V0DS00 9
μ
PC8112TB
12.2 IF 100 MHz Matching (fRFin = 900 MHz)
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35 0
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35 0
20
10
0
–10
–20
–30
–40
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
–50
0
–60
–70
20
15
10
5
0
–5
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–10 10
0
V
CC
= 3.3 V V
CC
= 3.0 V
V
CC
= 2.7 V
P
out
IM
3
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 900 MHz
P
RFin
= –40 dBm
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin1
= 900 MHz
f
RFin2
= 905 MHz
f
LOin
= 1 000 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
IFout
= 100 MHz
Data Sheet P12808EJ3V0DS00
10
μ
PC8112TB
20
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage VCC (V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
20
18
16
14
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power PLOin (dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
60
fRFin = 900 MHz
fLOin = 1 000 MHz
fIFout = 100 MHz
VCC = VPS = VIFout = 3.0 V
12
10
8
20
15
10
5
Conversion Gain CG (dB)
50
0100 150
IF Output Frequency fIFout (MHz)
CONVERSION GAIN vs.
IF OUTPUT FREQUENCY
–25 500
fRFin = 900 MHz
PRFin = –40 dBm
PLOin = –10 dBm
VCC = VPS = VIFout = 3.0 V
0
–5
–10
–15
–20
250
200 300 350 400 450
Data Sheet P12808EJ3V0DS00 11
μ
PC8112TB
12.3 IF 100 MHz Matching (fRFin = 1.5 GHz)
5
0
–5
–10
–15
–20
–25
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–30 10
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
0
5
0
–5
–10
–15
–20
–25
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–30 10
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
0
10
0
–10
–20
–30
–40
–50
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF OUTPUT POWER
–60
0
–70
–80
P
out
IM
3
f
RFin1
= 1.5 GHz
f
RFin2
= 1.505 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
–90
15
10
5
0
–5
–10
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–15 10
0
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
RFin
= –40 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
Data Sheet P12808EJ3V0DS00
12
μ
PC8112TB
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage V
CC
(V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
30
25
20
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power P
LOin
(dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
00
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
15
10
5
Data Sheet P12808EJ3V0DS00 13
μ
PC8112TB
12.4 IF 240 MHz Matching
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35
0
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35
0
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
–40
T
A
= –40°C
T
A
= +25°C
T
A
= +85°C
–40
20
10
–10
–20
–30
–40
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM3 vs. RF INPUT POWER
–50
0
–60
–70
15
10
5
0
–5
–10
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–15 10
0
P
out
IM
3
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
f
LOin
= 1.66 GHz
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin1
= 1.9 GHz
f
RFin2
= 1.905 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
IFout
= 240 MHz
0
Data Sheet P12808EJ3V0DS00
14
μ
PC8112TB
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage V
CC
(V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
VCC = VPS = VIFout = 3.0 V
20
18
16
14
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power P
LOin
(dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
60
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
f
IFout
= 240 MHz
VCC = VPS = VIFout = 3.0 V
12
10
8
15
10
5
Conversion Gain CG (dB)
0100
IF Output Frequency f
IFout
(MHz)
CONVERSION GAIN vs.
IF OUTPUT FREQUENCY
600
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
P
LOin
= –10 dBm
VCC = VPS = VIFout = 3.0 V
0
–5
–10
–15
–20 200 300 400 500
5
15
13
12
SSB Noise Figure SSB•NF (dB)
–20
–40 020
Operating Ambient Temperature T
A
(°C)
SSB NOISE FIGURE vs.
OPERATING AMBIENT TEMPERATURE
5100
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
VCC = VPS = VIFout = 3.0 V
8
7
6
14
10
9
11
40 60 80
Remark The graphs indicate nominal characteristics.
Data Sheet P12808EJ3V0DS00 15
μ
PC8112TB
13. S-PARAMETERS
13.1 Calibrated on pin of DUT
1
1
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
62.711 Ω –224.07 Ω
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
RF PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 62.711 Ω-j224.07 Ω
2:900 MHz 48.977 Ω-j219.18 Ω
3:1 500 MHz 40.641 Ω-j129.94 Ω
4:1 900 MHz 37.422 Ω-j101.51 Ω
5:2 500 MHz 34.801 Ω-j74.141 Ω
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
76.656 Ω –421.67 Ω
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
RF PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 76.656 Ω-j421.67 Ω
2:900 MHz 53.102 Ω-j234.55 Ω
3:1 500 MHz 44.844 Ω-j140.82 Ω
4:1 900 MHz 40.898 Ω-j109.73 Ω
5:2 500 MHz 38.063 Ω-j80.547 Ω
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
169.11 Ω –429.98 Ω
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
LO PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 169.11 Ω-j429.98 Ω
2:900 MHz 91.875 Ω-j263.7 Ω
3:1 500 MHz 60.781 Ω-j162.56 Ω
4:1 900 MHz 56.789 Ω-j125.66 Ω
5:2 500 MHz 49.652 Ω-j97.602 Ω
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
135.53 Ω –575.06 Ω
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
LO PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 135.53 Ω-j575.06 Ω
2:900 MHz 78.266 Ω-j337.66 Ω
3:1 500 MHz 55.883 Ω-j201.43 Ω
4:1 900 MHz 52.734 Ω-j159.63 Ω
5:2 500 MHz 44.262 Ω-j122.66 Ω
S
22
REF
1
hp
Z
1.0 Units
200.0 mUnits/
201.00 Ω –1.7173 kΩ
MARKER 1
100.0 MHz
1
2
START
STOP 0.050000000 GHz
3.000000000 GHz
IF PORT
V
CC
= V
PS
= 3.0V
1:100 MHz 201.88 Ω-j1.7173 kΩ
2:240 MHz 92.094 Ω-j715.72 Ω
S
22
REF
1
hp
Z
1.0 Units
200.0 mUnits/
056.56 Ω –1.7468 kΩ
MARKER 1
100.0 MHz
1
2
START
STOP 0.050000000 GHz
3.000000000 GHz
IF PORT
V
CC
= 3.0V V
PS
= GND
1:100 MHz 56.56 Ω-j1.7468 kΩ
2:240 MHz 85.5 Ω-j722.22 Ω
Data Sheet P12808EJ3V0DS00
16
μ
PC8112TB
13.2 IF Output Matching (VCC = VPS = VIFout = 3.0 V) −on Test Circuit−
(This S11 is monitored at IF connector on test circuit fixture)
IF 100 MHz MATCHING IF 240 MHz MATCHING
100.000 000 MHz
hp
S
11
1 U FS 1 : 50.277 Ω –22.559 Ω 70.552 pF
MARKER 1
100 MHz
1
START 50.000 000 MHz STOP 3 000.000 000 MHz
240.000 000 MHz
hp
S
11
1 U FS 1 : 31.052 Ω –84.961 mΩ 7.8053 nF
MARKER 1
240 MHz
1
START 50.000 000 MHz STOP 3 000.000 000 MHz
102.366 002 MHz
hp
S
11
log MAG. 10 dB/ REF 0 dB 1 : –27.655 dB
MARKER 1
102.366002 MHz
1
START 90.000 000 MHz STOP 110.000 000 MHz
241.770 000 MHz
hp
S
11
log MAG. 10 dB/ REF 0 dB 1 : –13.556 dB
MARKER 1
241.770000 MHz
1
START 230.000 000 MHz STOP 250.000 000 MHz
The data in this page are to make clear the test condition of impedance matched to next stage, not specify the
recommended condition. The S11 smith charts of the test fixture setting IC are normalized to Z O = 50 Ω, because the
IC's load is the measurement equipment of 50 Ω impedance.
In your use, the output return loss value can be helpful information to adjust your circuit matching to next stage.
Data Sheet P12808EJ3V0DS00 17
μ
PC8112TB
14. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15+0.1
–0.05
2.0±0.2
1.3
0.650.65
0.2+0.1
–0.05
2.1±0.1
1.25±0.1
0.1 MIN.
Data Sheet P12808EJ3V0DS00
18
Data Sheet P12808EJ3V0DS00 19
μ
PC8112TB
15. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3) The bypass capacitor (example: 1 000 pF) should be attached to the VCC pin.
(4) The matching circuit should be externally attached to the IF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
16. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Condition Recommended Condition Symbol
Infrared Reflow Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limit: NoneNote
IR35-00-3
VPS Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limit: NoneNote
VP15-00-3
Wave Soldering Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
WS60-00-1
Partial Heating Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
