G S=THOMSON ?7ic D THOMSON SEMICONDUCTORS B vseq237 coo4wsss o ff 7-29-20 fast switching thyristors >100 Arms Tamb = 25C dv/dt* | Ipay* @60%| @ . Vorm | VRRM Types lo | Vero | ttsm* | Vim /'tm | Vert | lor | di/dt Ipm* tg* Case = 10 ms @ VoRM VDRM max max |max| min min max max (A)| {V) (A) | CV) (A) | CY) [tm A)} (Als) | (Vins) | (mA) (xs) 700 Arms / Tease = 80C Tj = 125C Pt = 405 000 As Ip = 250A TF 666 01 (B,Z,Y,A) 100 TF 666 02 (B,Z,Y,A) 200 TF 666 04 (B,Z,Y,A) 400 A = 20 TF 666 06 (B,Z,Y,A) 600 Y = 25 TF 666 08 (B.Z.Y.A) 446} G9 | 9000 | 2,1 1500} 3 | 200} 800 | 300 35 7-30 LIF 666 10 (B,Z,Y,A) 1000 B = 40 TF 666 12 (B,Z,Y,A) 1200 TF 666 14 (B,Z,Y,A)_ 1400 750 Arms / Tease = 80C Tj = 125C I? + = 320 000 As {7 = 250A TF 708 12 B 1200 TF 708 14.B 1400 TF 708 16B 480| 1600 | 8000 |2,8 2000] 3 -| 200] 800 | 300 60 B = 40 TF 708 18 B 1800 TF 708 20 B 2000 MU 171 {CB-264) 900 Arms / Tease = 80C Tj = 125C It = 720 000As Ip = 250A TF 709 O1 (B,Z,Y,A) 100 TF 709 02 (B,Z,Y,A) 200 TF 709 04 (B,Z,Y,A) 400 A = 20 TF 709 06 (B,Z,Y,A) 600 Y =25 TF 709 08 (B.Z.Y.A} 573| go9 | 12000 | 2,05 2000] 3 | 200| 800 | 300 40 Zz = 30 TF 709 10 (B,Z,Y,A) 1000 B = 40 TF 709 12 (B,Z,Y,A) 1200 TF 709 14 (B,Z,Y,A) 1400 1300 Arms / Tease = 80C Tj = 125C Pt = 1 445 000 As it = 250A TF 913 12 C 1200 TF 913 14 1400 TF 913 16C 828| 1600 | 17000 | 2,15 2000; 3 | 200} 800 | 300 60 Cc =50 TF 913 18 C 1800 TF 913 20 C 2000 1500 Arms /Tcase = 80C Tj = 125C I?t = 1445 000 A s iy = 250A TF 915 01 (B,Z) 100 TF 915 02 (B,Z) 200 TF 915 04 (B,Z} 400 MU 168, TF 915 06 (B,Z) 600 Z =30 (CB-265 TF 915 08 (8.7) 955] go9 | 17000 | 1,75 2000] 3 | 200) 800 | 300 60 5 - 40 TF 915 10 (B,Z} 1000 TF 915 12 (B,Z) 1200 TF 915 14 (B,Z} 1400 * @ Tj = 125C 156