Frequency and Timing SA.31m, SA.33m, and SA.35m Miniature Atomic Clock (MAC) SA.3Xm Features * High-precision atomic clock * Small form factor (standard OCXO pinout) * 1.5 s typical holdover over temperature (SA.35m) * Low power consumption * RoHs 6/6-compliant Applications * Stand-alone (free-run) stable frequency source for audio equipment, LTE base stations, smart grid, and enterprise network Infrastructure * Extended holdover for CDMA and WiMAX base stations * Stability for various other communication and transmission applications www.microchip.com Newly Enhanced MAC SA.3Xm Family The Microchip SA.3Xm marks a major step forward in the evolution of rubidium atomic clocks. Based on a new generation of atomic clock technology, the SA.3Xm family has a unique package that enables unprecedented miniaturization in a rubidium clock. It is suitable for applications requiring compact design, low power consumption, low aging, and precision in an economical and easily adaptable package. Smallest Commercially Available Rubidium Clock Microchip has leveraged the significant advances in miniaturization and integration to design the world's first commercially available miniature atomic clock. The SA.3Xm has physical dimensions and packaging of a small ovenized crystal oscillator (OCXO), measuring 50.8 mm x 50.8 mm (2" x 2") and standing at a mere 18.3 mm (0.72"). The MAC is the world's first commercially available rubidium coherent population trapping atomic clock. It consumes less power and has wide spectrum temperature operation. This makes it useful for a range of timing and synchronization applications--wireless base stations, wire line network infrastructure, defense systems, and test and measurement devices. The small size of the SA.3Xm enables it to be easily mounted to a PCBA. SA.31m The SA.31m is targeted for applications that require an economical solution for frequency stability, such as audio equipment in studio applications. It can also be used as an independent frequency source for next generation base stations, smart grid infrastructure and Enterprise network infrastructure. It enables transition from costly TDM backhaul transport to economic and efficient Ethernet transport. SA.33m The SA.33m has superior aging, tempco, and stability than the SA.31m. The SA.33m may be deployed in existing rubidium applications such as extended holdover (for CDMA/CDMA 2000 or WiMAX). SA.35m The SA.35m is the premium grade of the entire SA.3Xm family. It has the best tempco and greatest performance amongst all the versions of the family. The SA.35m is suited for applications such as extended hold over for LTE-TDD base stations and other applications that require precision frequency and long hold-over. Economical for its performance level, the SA.35m delivers premium performance at an excellent price. Specifications1 Electrical Environmental RF Outputs Specification Frequency 10 MHz Operating Temperature -10 C to 75 C baseplate Waveform CMOS square wave, 0 VDC-5 VDC(max) Magnetic Sensitivity <7 x 10-11/Gauss (up to2 Gauss) Logic Level VOL(max) 0.55 V, VOH(min) 2.3 V Humidity GR-63-CORE, issue 4, April 2012, section 4.1.2 Rise/Fail Time <10 ns (15 pf, 1M load) Duty Cycle 50% 10% Built-in Test Equipment Output Vibration (Operating) 7.7 grms, at 1 hour/axis MIL-STD-810, figure 514.7E-1, category 24 (General Minimum Integrity Exposure) No loss of lock 30 g, 11 ms half-sine pulse per MIL-STD-202, Method 213, Test Condition J. Frequency perturbation 4 x 10- 9 momentary Format CMOS Humidity Shock (Operating) Logic 0 = Normal Operation 1 = Alarm Storage and Transport (Non-operating) Serial Communications Temperature -55 C to 100 C Protocol RS232 Format CMOS 0 V to 5 VDC Vibration (non-operating, unpackaged) 10.9 grms at 1 hour/axis per MIL-STD-810, figure 514.7E-1, Cat 24 Baud Rate 57600 (8, N, 1) Shock (non-operating, unpackaged) 50 g, 11 ms half-sine pulse per MIL-STD-202, Method 213, Test Condition A Power Input Supply Voltage/Current 5 VDC 0.1 VDC, max current <2.8 A Specification Power Consumption <15 min (typical @25C) 8 W at 10 C, 5 W at 25 C, 5 W at 75 C baseplate Warm-up Time (Time to <1 x 10-9) Retrace <2 x 10-11 peak-to-peak (+5 VDC 0.1 VDC) <5 x 10-11 (on-off-on: 24 hours, 48 hours, 12 hours) Analog Tuning Range: 1 x 10-8 Input: 0 V-5 V into 5 k Digital Tuning Range: 2 x 10-8 (resolution 1 x 10-12) Warm-up 14 W max (-10 C to 75 C) Operating Voltage Coefficient Performance Parameters 1 At 25 C and 5 VDC, unless otherwise specified. Time Drift in a 24 hr Period 1.5 s, typical (-10 C to 70 C, 16 C/hr) (SA.35m) MTBF Per MIL-HDBK-217F Per Telcordia SR-332, Issue 1 Accuracy at Shipment www.microchip.com 20 years at 40 C (ground, benign, GB) 17 years at 40 C (ground, fixed, GF) 20 years at 40 C (ground, fixed, uncontrolled) <5 x 10-11 Ordering Information Phase Noise (SSB) Frequency Sa.35m/SA.33m SA.31m Part Number Description3 1 Hz <-70 dBc/Hz <-65 dBc/Hz 090-44310-31 SA.31m Rubidium Clock, AT Disabled 10 Hz <-87 dBc/Hz <-85 dBc/Hz 090-44310-32 SA.31m Rubidium Clock, AT Enabled 100 Hz <-114 dBc/Hz <-112 dBc/Hz 090-44330-31 SA.33m Rubidium Clock, AT Disabled 1 kHz <-130 dBc/Hz <-130 dBc/Hz 090-44330-32 SA.33m Rubidium Clock, AT Enabled 10 kHz <-140 dBc/Hz <-140 dBc/Hz 090-44350-31 SA.35m Rubidium Clock, AT Disabled 090-44350-32 SA.35m Rubidium Clock, AT Enabled 090-44300-00 SA.3Xm Developer's Kit Spurious (non-harmonic) <-85 dBc Temperature Coefficient (Peak-to-Peak) Temperature SA.35m SA.33m SA.31m 0 C to 70 C 7 x 10-11 1 x 10-10 7 x 10-10 -10 C to 75 C 1 x 10-10 1.5 x 10-10 1 x 10-9 3 AT = Analog Tuning Aging Type SA.35m/ SA.33m SA.31m Daily 2.5 x 10 4 x 10-11 Monthly2 1 x 10-10 3 x 10-10 Yearly 1 x 10-9 1.5 x 10-9 2 -11 2 After 1 day and 1 month of operation, respectively. Short-Term Stability (Allan Deviation) Type SA.35m/ SA.33m SA.31m =1s 3 x 10-11 5 x 10-11 = 10 s 1.6 x 10-11 2.5 x 10-11 = 100 s 8 x 10-12 1 x 10-11 Physical Specification Details Weight <85 g (<3 oz) Size 18.3 mm x 50.8 mm x 50.8 mm Volume <49.5 cm3 (< 3.0 in3) RoHS Compliance 6/6 RoHS-compliant The Microchip name and logo and the Microchip logo are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2019, Microchip Technology Incorporated. All Rights Reserved. 3/19 900-00378-000 Rev L DS00002981A www.microchip.com