HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002. 02.08
Page No. : 1/3
HBD438T HSMC Product Specification
HBD438T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD438T is silison epitaxial-base PNP power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary NPN type is HBD437T.
Absolute Maximum Ratings (Ta=25°C)
Symbol Parametor Value Unit
VCBO Collector-Base Voltage (IE=0) -45 V
VCES Collector- Em itter Voltag e (VBE=0) -45 V
VCEO Collector- Emitter Voltage (IB=0) -45 V
VEBO Emitt er-Base Voltage (IC= 0) -5 V
IC Collector Current -4 A
ICM Collector Peak Current (t≤10ms) -7 A
IB Base Current -1 A
Tc=25°C25 W
PD Total Dissipation at Ta=25°C1.3 W
Tstg S torage Temperature -55 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
Thermal Data
Rthj-case Thermal Resistance Junction-case Max. 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max. 96 °C/W
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current (IE=0) VCB=-45V - - -100 uA
ICES Collector Cut-off Current
(VBE=0) VCE=-45V - - -100 uA
IEBO Emitter Cut-off Current (IC=0) VEB=-5V -1 mA
*VCEO(sus) Collect or-Emitter Sustaining
Vol t ag e ( IB=0) IC=-100mA -45 - - V
*VCE(sat) Collector-Emitter Saturat ion
Voltage IC=-2A, IB=-0.2A - -0.2 -0.6 V
IC=-10mA,VCE=-5V - -0.58 - V
*VBE Base-Emitt er Voltage IC=-2A, VCE=-1V - - -1.2 V
IC=-10mA, VCE=-5V 30 130 -
IC=-0.5A, VCE=-1V 85 140 -
*hFE DC Curr e nt Gain IC=-2A, VCE=-1V 40 - -
fT Transition Frequency IC=-0.25A, VCE=-1V 3 - - MHz
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002. 02.08
Page No. : 2/3
HBD438T HSMC Product Specification
Characteristics Curve
Cu r rent Gain & Collector Current
10
100
1000
1 10 100 1000 10000
Collec tor Cur rent -I
C
(mA)
hFE
hFE@VCE=1V hFE@VCE=5V
Saturat ion Voltage & Collector Curren t
1
10
100
1000
1 10 100 1000 10000
Collec tor Cur rent-I
C
(mA)
Satu ration Voltage (mV)
VCE(sat)@IC=10IB
Saturat ion Voltage & Collector Curren t
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
Satu ration Voltage (mV)
VBE(sat)@IC=10IB
On Vol tage & Collector Current
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
O n Voltage (mV)
VBE(on)@VCE=1V
Safe Operating Ar ea
0.01
0.1
1
10
1 10 100
Fow ar d Voltag e- V
CE
(V)
Collector Cur rent - I
C
(A)
1ms 100ms 1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002. 02.08
Page No. : 3/3
HBD438T HSMC Product Specification
TO-126 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
α1-*3°-*3°F 0.0280 0.0319 0.71 0.81
α2-*3°-*3°G 0.0480 0.0520 1.22 1.32
α3-*3°-*3°H 0.1709 0.1890 4.34 4.80
α4-*3°-*3°I 0.0950 0.1050 2.41 2.66
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes: 1.Dimension and tolerance based on our Spec . dat ed Mar. 6,1995.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plati ng
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri a l Park Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
DE
H
123
KJ I
α3
α4
L
M
α1
α2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
HSMC Packa
g
e Code: T
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Marking
