2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-495A (Z)
1st. Edition
Mar. 2001
Features
Low on-resistance
RDS = 15 m typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK2912(L), 2SK2912(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID40 A
Drain peak current ID(pulse)*1160 A
Body to drain diode reverse drain current IDR 40 A
Avalanche current IAP*340 A
Avalanche Energy EAR*3137 mJ
Channel dissipation Pch*250 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
2SK2912(L), 2SK2912(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) —1520mI
D
= 20A, VGS = 10V*1
resistance RDS(on) —2540mI
D
= 20A, VGS = 4V*1
Forward transfer admittance |yfs|2035SI
D
= 20A, VDS = 10V*1
Input capacitance Ciss 1500 pF VDS = 10V
Output capacitance Coss 720 pF VGS = 0
Reverse transfer capacitance Crss 200 pF f = 1MHz
Turn-on delay time td(on) 20 ns ID = 20A, VGS = 10V
Rise time tr 180 ns RL = 1.5
Turn-off delay time td(off) 200 ns
Fall time tf 200 ns
Body to drain diode forward
voltage VDF 0.95 V IF = 40A, VGS = 0
Body to drain diode reverse
recovery time trr —70—V I
F
= 40A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
2SK2912(L), 2SK2912(S)
4
Main Characteristics
100
75
50
25
050 100 150 200 0.1 0.3 1 310 30 100
50
40
30
20
10
012345
Tc = 75°C
25°C
–25°C
50
40
30
20
10
0246810
3.5 V
4 V
V = 3 V
GS
1000
300
100
30
10
3
1
0.3
0.1 Ta = 25 °C
10 V
6 V
4.5 V
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Pulse Test
V = 10 V
Pulse Test
DS
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
Operation in
this area is
limited by RDS(on)
2SK2912(L), 2SK2912(S)
5
2.0
1.6
1.2
0.8
0.4
048
12 16 20 1 10 100250
0.5
0.2
0.1
0.02
0.05
0.01
0.005
0.05
0.04
0.03
0.02
0.01
–40 0 40 80 120 160
012510 20 50 100
100
50
10
20
2
5
1
205
I = 20 A
D
V = 4 V
GS
10 V
10 A
10, 20 A
I = 50 A
D
10 A
20 A
V = 4 V
GS
10 V
50 A
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
DS
2SK2912(L), 2SK2912(S)
6
0.1 0.3 1 3 10 30 100 01020304050
50
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
20 40 60 80 100
0
1000
300
30
100
3
10
1
0.1 0.3 1 3 10 30 100
1000
500
100
200
20
50
10
I = 40 A
D
VGS
VDS
V = 50 V
25 V
10 V
DD
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 10 V
25 V
50 V
DD
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
tf
r
td(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
2SK2912(L), 2SK2912(S)
7
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V
5 V
200
160
120
80
40
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
I = 40 A
V = 25 V
duty < 1 %
Rg > 50
AP
DD
2SK2912(L), 2SK2912(S)
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2912(L), 2SK2912(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
12
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