FLMI1011-4D oe) Internally Matched Power GaAs FETs aOR E FEATURES * High Output Power: Py gp = 35.5dBm (Typ.) * High Gain: Gjqp = 6.0dB (Typ.) * High PAE: nad = 24% (Typ.) * Low IMg = -45dBc@Po = 25dBm * Broad Band: 10.7 ~ 11.7GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed DESCRIPTION The FLM1011-4D is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage Vbs 15 Vv Gate-Source Voltage Vas -5 Vv Total Power Dissipation PT To = 25C 25 Ww Storage Temperature Tstg -65 to +175 C Channel Temperature | Teh 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1, The drain-source operating voltage (Vpg) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.0 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C Item Symbol Test Conditions Min. | Typ. | Max. Unit Saturated Drain Current Ipss_ | Vps =5V, Vas =0V - 1800 | 2700 mA Transconductance dm Vos = 5V, Ips =1100mA - 1000| - mS Pinch-off Voltage Vp Vps = 5V, Ips =90mA -1.0 | -2.0 | -3.5 Vv Gate Source Breakdown Voltage | VGso | Ias = -90uA -5 - - Vv Output Power at 1dB G.C.P. PidB 34.5 | 35.5 - dBm Power Gain at 1B GCP. Giap | VDs =10V, 5.0 6.0 - dB Drain Current | ldsr ps- oe DSS {TyP.) ; 4100 | 1300 mA Power-added Efficiency | Nadd | Zs=Z,=50 ohm - 24 - % Gain Flatness | ac - - | 206 dB Sonic, Intermodulation | Mg Stone oe, Af = 10 MHz wo | as ie Pout = 25dBm S.C.LL. Thermal Resistance | Rth Channel to Case - 5.0 | 6.0 C/W CASE STYLE: IA G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1998 Microwave Databook 496 Data Sheets FLMI1011-4D roe) a0) SY Internally Matched Power GaAs FETs OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER => -_ P4dB ~ 38 VDS= & E ---Vps=8V CS 36 te S 36 a g To ZA rm 34 Oo 34 Pout (7 - o Ma S ga 32 a 32 a 40 & = 2 oo Nadd -L S O 30 O 30 v7 sa 20 & 4--T oO 23 25 27 29 31 33 10.7 10.9 11.1 11.3 11.5 11.7 Frequency (GHz) Input Power (dBm) OUTPUT POWER & IMg vs. INPUT POWER Vps=10V fo = 11.71 GHz 27 2-tone test | AA 25 i, 20 Yo / Output Power (S.C.L.) (dBm) 23 J -30 8 Y YY S 21 1 -40 19 a Me -50 15 17 19 21 23 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Data Sheets A497 1998 Microwave Databook FLM1011-4D foe) Internally Matched Power GaAs FETs aOR E +60 +90 oo S11 So4 425 sto "0n= Spe iso [5 T T SCALE FOR |S S-PARAMETERS Vps = 10V, IDs = 1100mA FREQUENCY $11 $21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 10500 63 136 1.99 172 04 141 38 161 10700 57 117 2.26 159 .06 123 37 145 10900 .50 90 2.36 144 .07 99 35 122 11100 44 57 2.54 126 .09 79 32 93 11300 41 19 2.53 109 .09 57 31 58 11500 42 -16 2.52 87 10 38 32 24 11700 44 -44 2.18 67 10 26 34 se) 11900 44 -66 1.81 58 10 12 38 -22 1998 Microwave Databook 498 Data Sheets FLM1011-4D re) ae) I Internally Matched Power GaAs FETs Case Style "IA" Metal-Ceramic Hermetic Package 0.1 > | 0.004) ( Oo d [| 2-R 1.25%0.15 le (0.049) Rh 1.5 Min. (0.059) > 9.720.15 (0.382) oro 0s A _ 0.5 1.80.15 ) (0.020) 7 (0.071) 1.5 Min. a (0.059) 3.2 Max. |* SE) were | | | 20 1.15 | 0.045) 0.2 Max (0.008) ~ | 13.020.15 WS 1: Gate (0.512) 2: Source (Flange) 16.50.15 3: Drain _ a $i (0.650) Unit: mm (Inches) 499 1998 Microwave Databook Data Sheets