SAMSUNG SEMICONOUCTOR MPS6513 INC LYE D Bj esesis2 o007323 4 i : Tr2q52 NPN EPITAXIAL SILICON TRANSISTOR + AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo =30V * Collector Dissipation: P, (max)=625mW ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Emitter Voltage _ Veeo 30 v Collector-Base Voltage Veso 40 Vv Emitter-Base Voltage Veao 4 4 Vou Collector Current Io 100 mA | Collector Dissipation Pe 625 mw Junction Temperature Ti 150 Cc ii Storage Temperature Tstg ~&5~150 c | * Refer to 2N3904 for graphs TO-92 1. Emitter 2, Base 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BV ceo Ic =500pA, Ip =O 30 Vv Emitter-Base Breakdown Voltage BVeso fe =10pA, Ic =O 4 Vv Collector Cut-off Current IcBo Vee =30V, Ir =0 50 nA DC Current Gain Hee Ic=2mA, Vce=10 90. 180 Io =100mA, Vee =10V 60- . Collector-Emitter Saturation Voltage Vee (sat) Io =50mA, lg=5mA 0.6 Vv Output Capacitance Cob Ves = 10V, fg =0 3.5 pF f=100KHz *Pulse Test: Pulse Width < 300us, Duty Cycle < 2% 893 ce SAMSUNG SEMICON DUCTOR