January 2007
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FDY3000NZ Rev B
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON)
@ VGS = 2.5v.
Applications
x Li-Ion Battery Pack
Features
x 600 mA, 20 V RDS(ON)
= 700 m:@ VGS = 4.5 V
RDS(ON)
= 850 m: @ VGS = 2.5 V
x ESD protection diode (note 3)
x RoHS Compliant
Absolute Maxim um Ratings TA=25oC unless otherwise noted
Sym bol Param eter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage r 12 V
ID Drain Current – Continuous (Note 1a) 600 mA
– Pulsed 1000
PD Power Dissipation (Steady State) (Note 1a) 625 mW
(Note 1b) 446
TJ, TSTG Operating and Storage Junction Temperature
Range
–55 to +150 qC
Therm al Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 200 qC/W
RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 280
Package Marking and Ordering Inform ation
Device Marking Device Reel Size Tape width Quantity
C FDY3000NZ 7 ’’ 8 mm 3000 units
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench
MOSFET
1
3
5
2
4
6
S1D1
G2
S2
D2
G1
4
6
5
3
1
2
tm
January 2007
FDY3000NZ Rev B www.fairchildsemi.com
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown
Voltage
VGS = 0 V, ID = 250 PA20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, Referenced to 25qC 14 mV/qC
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA
VGS = r 12 V, VDS = 0 V r 10 PA
IGSS Gate–Body Leakage,
VGS = r 4.5 V, VDS = 0 V r 1 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA0.6 1.0 1.3 V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC– 3 mV/qC
RDS(on) Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 150 mA
VGS = 4.5 V, ID=600mA, TJ= 125qC
0.25
0.37
0.73
0.35
0.70
0.85
1.25
1.00 :gFS Forward Transconductance VDS = 5 V, ID = 600 mA 1.8 S
Dynamic Characteristics
Ciss Input Capacitance 60 pF
Coss Output Capacitance 20 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
10 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 8 16 ns
tf Turn–Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 : 2.4 4.8 ns
Qg Total Gate Charge 0.8 1.1 nC
Qgs Gate–Source Charge 0.16 nC
Qgd Gate–Drain Charge
VDS = 10 V, ID = 600 mA,
VGS = 4.5 V
0.26 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V
trr Diode Reverse Recovery Time 8 nS
Qrr Diode Reverse Recovery Charge
IF = 600 mA,
dIF/dt = 100 A/µs 1 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design
a) 200°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width < 300Ps,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDY3000NZ Rev B www.fairchildsemi.com
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
0 0.25 0.5 0.75 1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
2.0V
V
GS
= 4.5V 3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 0.2 0.4 0.6 0.8 1
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 600mA
V
GS
= 4.5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1 2 3 4 5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 300mA
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
0.5 1 1.5 2 2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORW ARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDY3000NZ Rev B www.fairchildsemi.com
Typical Characteristics
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 600mA
V
DS
= 5V
15V
10V
0
10
20
30
40
50
60
70
80
90
100
0 4 8 12 16 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s 100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
TJA
= 280
o
C/W
T
A
= 25
o
C
10ms
1ms
0
5
10
15
20
25
30
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
TJA
= 280°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=280 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDY3000NZ Rev B www.fairchildsemi.com
Dimensional Outline and Pad Layout
0.55
1.20 BSC
0.20 BSC
0.35 BSC
0.18
0.10
DETAIL A
SCALE 2 : 1
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
1.70
1.50
1.70
1.55
0.50
1.00
0.30
0.15
0.60
0.56
(0.20)
1 3
6 4
SEE DETAIL A
LAND PATTERN RECOMMENDATION
1.80
0.30
1.25
0.50
0.50
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
TRADEMARKS
The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not
intended to b e an ex haustiv e list of all suc h tradem ark s.
DISC L AIMER
F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS
H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E
A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS
P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D ’S
W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS .
L IF E SU P P O RT P O L IC Y
F A IR C H IL D ’S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S
W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N .
A s used herein:
1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s
whic h, (a) are intended for surgic al im p lant into the b ody , or
(b ) sup p ort or sustain life, or (c ) whose failure to p erform
when p rop erly used in ac c ordanc e with instruc tions for use
p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to
result in signific ant injury to the user.2. A c ritic al c om p onent is any c om p onent of a life sup p ort
dev ic e or sy stem whose failure to p erform c an b e
reasonab ly ex p ec ted to c ause the failure of the life sup p ort
dev ic e or sy stem , or to affec t its safety or effec tiv eness.P RO DU C T STATU S DEF IN ITIO N S
De fin itio n o f Te rm s
A C Ex ™
A c tiv eA rray ™
B ottom less™
B uild it N ow™
C oolF ET™
CROSSVOLT™
D O M E™
Ec oS P A R K ™
E2C M O S ™
EnS igna™
F A C T®
F A S T®
F A S Tr™
F P S ™
F R F ET™
F A C T Q uiet S eries™
G lob alO p toisolator™
G TO ™
H iS eC ™
I2C ™
i-Lo ™
Im p liedD isc onnec t™
IntelliM A X ™
IS O P L A N A R ™
L ittleF ET™
M IC R O C O U P L ER ™
M ic roF ET™
M ic roP ak ™
M IC R O W IR E™
M S X ™
M S X P ro™
O C X ™
O C X P ro™
O P TO L O G IC ®
O P TO P L A N A R ™
P A C M A N ™
P O P ™
P ower24 7 ™
P owerEdge™
P owerS av er™
P owerTrenc h®
Q F ET®
Q S ™
Q T O p toelec tronic s™
Q uiet S eries™
R ap idC onfigure™
R ap idC onnec t™
µ S erD es™
S c alarP um p ™
S IL EN T S W ITC H ER ®
S M A R T S TA R T™
S P M ™
S tealth™
S up erF ET™
S up erS O T™-3
S up erS O T™-6
S up erS O T™-8
S y nc F ET™
TC M ™
Tiny B oost™
Tiny B uc k ™
Tiny P W M ™
Tiny P ower™
Tiny L ogic ®
TIN Y O P TO ™
TruTranslation™
UHC®
U niF ET™
V C X ™
W ire™
A c ross the b oard. A round the world.™
The P ower F ranc hise®
P rogram m ab le A c tiv e D roop ™
Da ta s h e e t Id e n tific a tio n P ro d u c t Sta tu s De fin itio n
A dv anc e Inform ation F orm ativ e or In
D esign
This datasheet c ontains the design sp ec ific ations for
p roduc t dev elop m ent. S p ec ific ations m ay c hange in
any m anner without notic e.
P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and
sup p lem entary data will b e p ub lished at a later date.
F airc hild S em ic onduc tor reserv es the right to m ak e
c hanges at any tim e without notic e in order to im p rov e
design.
N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild
S em ic onduc tor reserv es the right to m ak e c hanges at
any tim e without notic e in order to im p rov e design.O b solete N ot In P roduc tion This datasheet c ontains sp ec ific ations on a p roduc t
that has b een disc ontinued b y F airc hild sem ic onduc tor.
The datasheet is p rinted for referenc e inform ation only .
R ev . I22
