e
1
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 40 Vdc
Collector-Base Voltage VCBO 65 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC8.0 Adc
Total Device Dissipation at Tflange = 25°C PD145 Watts
Above 25°C derate by 0.83 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 1.2 °C/W
Gain vs. Frequency
(as measured in a broadba nd c ircuit)
8
9
10
11
12
920 925 930 935 940 945 950 955 960 965
Frequency (MHz)
Gain (dB)
VCC = 25 V
ICQ = 200 mA
Pout = 60 W
PTB 20148
60 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20148 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 925–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
20148
LOT CODE
9/28/98
PTB 20148
2
e
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 25 30 — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5.0 — Volts
DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 960 MHz) Gpe 8.0 9.5 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 960 MHz) ηC50 — — %
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, Ψ— — 10:1 —
f = 960 MHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA)
Frequency Z Source Z Load
MHz R jX R jX
925 3.4 -4.2 3.8 0.6
940 3.2 -4.7 3.5 1.2
960 3.0 -5.5 3.3 2.0
5
/19/98
PTB 20148
3
e
Efficiency vs. Frequency
(as measured in a broadba nd c ircuit)
20
30
40
50
60
70
80
920 925 930 935 940 945 950 955 960 965
Frequency (MHz)
Efficiency (%)
VCC = 25 V
ICQ = 200 mA
Pout = 60 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20148 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
