2N3866(A) Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a low profile UB package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES TO-205AD * JEDEC registered 2N3866 number * JAN, JANTX, JANTXV and JANS qualifications also available per MIL-PRF-19500/398 * RoHS compliant (formerly TO-39) Package Also available in: UB package APPLICATIONS / BENEFITS * * * (surface mount) 2N3866(A)UB Short leaded TO-205AD package Lightweight Military and other high-reliability applications MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage (1) (1) Total Power Dissipation @ TA = +25 C (2) @ TC = +25 C Collector Current TJ , Tstg R JC R JA V CEO V CBO V EBO PT IC Value Unit -65 to +200 60 175 30 60 3.5 1.0 2.9 0.4 C C/W C/W V V V Notes: 1. Derated linearly 5.71 mW/C for T A > +25 C 2. Derated at 16.6 mW/C for T C > +25 C W A MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0175, Rev. 2 (8/30/13) (c)2013 Microsemi Corporation Page 1 of 4 2N3866(A) MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance. MARKING: Part number, date code, manufacturer's ID and serial number POLARITY: NPN WEIGHT: Approximately 1.064 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3866 (A) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial V CBO V CE V CEO V CC V EBO JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol IB IC V BE V CB Forward Current Transfer Ratio selection option Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Base-emitter voltage: The dc voltage between the base and the emitter. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0175, Rev. 2 (8/30/13) (c)2013 Microsemi Corporation Page 2 of 4 2N3866(A) ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 5 mA Collector-Base Breakdown Voltage I C = 100 A Emitter-Base Breakdown Voltage I E = 100 A Collector-Emitter Cutoff Current V CE = 28 V Collector-Emitter Cutoff Current V CE = 55 V ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = 50 mA, V CE = 5.0 V Symbol Min V (BR)CEO 30 V V (BR)CBO 60 V V (BR)EBO 3.5 V 2N3866 2N3866A 2N3866 2N3866A I C = 360 mA, V CE = 5.0 V DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 50 mA, V CE = 15 V, f = 200 MHz 2N3866 2N3866A Output Capacitance V CB = 28 V, I E = 0, 100 kHz f 1.0 MHz A I CES1 100 A 15 25 5 8 200 200 V CE(sat) 1.0 V I CES2 2.0 mA h FE3 7 12 |h FE | 2.5 4.0 8.0 7.5 3.5 pF P 1out P 2out 1.0 0.5 n1 n2 45 40 % V (BR)CEX 55 V Collector Efficiency V CC = 28 V; P in = 0.15 W; f = 400 MHz V CC = 28 V; P in = 0.075 W; f = 400 MHz Clamp Inductive Collector-Emitter Breakdown Voltage V BE = -1.5 V, I C = 40 mA 20 C obo POWER OUTPUT CHARACTERISTICS Power Output V CC = 28 V; P in = 0.15 W; f = 400 MHz * V CC = 28 V; P in = 0.075 W; f = 400 MHz * * See Figure 4 on MIL-PRF-19500/398 Unit I CEO h FE Collector-Emitter Saturation Voltage I C = 100 mA, I B = 10 mA Collector-Emitter Cutoff Current - High Temp Operation V CE = 55 V, TA = +150 C Forward-Current Transfer Ratio - Low Temperature Operation 2N3866 V CE = 5.0 V, I C = 50 mA, TA = -55 C 2N3866A Max 2.0 W (1) Pulse Test: pulse width = 300 s, duty cycle 2.0% T4-LDS-0175, Rev. 2 (8/30/13) (c)2013 Microsemi Corporation Page 3 of 4 2N3866(A) PACKAGE DIMENSIONS Ltr Dimensions Inch Millimeters Min Max Min Max Notes CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 h 0.009 0.041 0.23 1.04 j 0.028 0.034 0.71 0.86 3 k 0.029 0.045 0.74 1.14 3, 4 LD 0.016 0.021 0.41 0.53 8, 9 LL 0.500 0.750 12.7 19.05 LC 0.200 TP 5.08 TP 7 LU 0.016 0.019 0.41 0.48 8, 9 L1 - 0.050 - 1.27 8, 9 L2 0.250 6.35 0.100 - 8, 9 P - Q - 0.030 - 0.76 5 0.25 45 TP 10 7 r 0.010 45 TP 2.54 7 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimensions are in inches. Millimeters are given for information only. Beyond r (radius) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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