ky SGS-THOMSON MICROELECTRONICS P0O1xxxL SENSITIVE GATE SCR FEATURES a IT(7RMS) =0.2A = VorM = 100V to 400V a Low let< 1A maxto <200nA DESCRIPTION The PO1xxxL series of SCRs uses a high performance planar PNPN technology. These SOT23 parts are intended for general purpose high (Plastic) volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Ir7RMs)* | RMS on-state current Ta= 25C 0.26 A (180 conductionangle) ITiAyy * Mean on-state current Ta= 25C 0.17 A (180 conductionangle) ITsmM Non repetitive surge peak on-state current | tp =8.3 ms 5 A (Jj initial = 25C ) tp = 10 ms 7 I*t ?t Value for fusing tp = 10 ms 0.24 As dl/dt Critical rate of rise of on-state current 30 A/us Ia@=10mA dig /ct =0.1 A/us. Tstg Storage and operating junction temperature range - 40, +150 C qj -40, +125 Tl Maximum lead temperature for soldering during 10s 260 C * : Mounted on a ceramic substrate of 8 x 10 x 0.7mm. Voltage Symbol Parameter Unit A B Cc D VpRM Repetitive peak off-state voltage 100 | 200 | 300 | 400 Vv VRRM Tj =125G Rek = 1KQ January 1995 1/6PO1xxxL THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient * 500 CAV * : Mounted on a ceramic substrate of 8 x 10x 0.7mm. GATE CHARACTERISTICS (maximum values) Pe wavy 0.02 W Pem = 1 W (tp = 20 ps) lam = 0.5 A (tp =20 us) ELECTRICAL CHARACTERISTICS Sensitivity Symbol Test Conditions Unit 02 o9 11 15 lat Vp=12V (DC) R.=1400 Tj= 25C | MIN - - 4 15 LA MAX | 200 1 25 | 50 Vet Vp=12V (DC) Ri=1400 Tj= 25C | MAX 0.8 Vap Vp=Vpram RL=3.3kQ Tj=125C | MIN 0.1 Vv Rek =1K2 VRGM IRa =10nA Tj= 25C | MIN 8 Vv tga vyo=VorM~ ItM= 3x Iav) Tj= 25C | TYP 0.5 us diefdt=0.1AUs Ig=10mA IH r= 50mA Rex =1 KO Tj= 25C | MAX 5 mA IL Ig=1mA Rex =1KQ Tj= 25C | MAX 6 mA VIM tu=0.4A tp= 380us Tj= 25C | MAX 1.3 Vv IDRM Vp =Vprm Rex = 1K Tj= 25C | MAX 1 LA IRRM VR =VRRM . Tj= 125C | MAX 100 LA dV/at Vo=67%Vprm Rek =1 KQ Tj=125C | MIN | 25 | 25 | 50 | 100] Vus tq m= 3 x ITrav) VR=35V Tj= 125C | MAX 200 us di/dt=10Adais tp=100us dV/dt=10V/us Vo= 67%VorM Rek = 1 KO ORDERING INFORMATION SCR PLANAR | PACKAGE : L=SOT23 CURRENT SENSITIVITY VOLTAGE 2/6 hr SGS-THOMSON MIGRGELESTROMIGSPO1xxxL Fig.1 : Maximum average power dissipation ver- sus average on-state current. P (W) 0.25 360" 0.20 4 \ | Fe 0.15 KE a yy Niy- 180 0.10 b+ 4 = 120 Y Na- 908 0.05 \ Fig.3 : Average on-state current versus tab tem- perature. ITavy (A) 0.25 0.20 0.15 Ps. 0.10 IN 0.05 PS Tamb (C mb (0) DA 0 10 20 30 40 50 60 70 80 90 100 110120130 0.00 Fig.5: Relative variation of gate trigger current and holding current versus junction temperature. Igt{ Ti] Ih[Tj] Igt[Tj=25 C] = Ih[Tj=25 C] 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 Tiec) -40 -20 O 20 = 640 60 8=680 100 120 140 Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb). P (W) 0.25 0.20 NY Rihj-a} 0.15 S 0.10 MN 0.05 aN Tamb (C) NN, 0.00 NS o 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rih(j-a) 1.00 Alumine substrate: 10mm*8mm*0.5mm tpis) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Tomt4) Tj initial = 25C Number of cycles 1 10 100 1,000 o = nN WwW fbf uwanyt ao {7 SGS-THOMSON 3/6 Nf wicrorecRoMmesPO1xxxL Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of It. lrg (A). Pt (Ars) Ir (A) 100 10 initial = 25 T initi 25C 10 4 4 0.1 0.1 1 005 115 2 25 3 35 4 45 5 55 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) 3 ih(igk=1k Q) 1.0 Q 0.1 1.0E6+00 1.0E+01 1.06+02 1.06+03 1.06+04 1.06405 1.0E+06 ag hr SGS-THOMSON MIGRGELESTROMIGSPACKAGE MECHANICAL DATA S0T23 (Plastic) PO1xxxL DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 0.93 1.04 0.036 0.041 B 1.20 1.40 0.047 0.055 C 0.15 0.006 D 0.085 0.115 0.003 0.005 E 0.45 0.60 0.018 0.024 F 0.08 0.003 7 G 0.013 0.10 0.0005 0.004 H 1.90 2.05 0.075 0.081 ] 0.95 1.05 0.037 0.041 " . J 0.95 1.05 0.037 0.041 K 2.10 2.50 0.083 0.098 L 0.45 0.60 0.018 0.024 - M 0.37 0.46 0.015 0.018 - . N 2.80 3.00 0.110 0.118 Weight : 0.007 g FOOT PRINT 0.8 {0.6 1.3 0.6] 0.8 12 0.8 k SGS-THOMSON Mf inienctuzcTRomcs 5/6PO1xxxL MARKING Type Marking PO0102AL P2A P0102BL P2B P0102CL P2C P0102DL P2D PO109AL PSA PO0109BL P9B P0109CL P9C P0109DL P9D PO111AL PIA P0111BL P1B P0111CL Pic P0111DBL P1iD PO115AL P5A PO0115BL P5B P0115CL P5C P0115DBL P5D Information furnished is beliaved to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or cther rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical componentsin life support devices or systems without exprass written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hang Kang - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 ky SGS-THOMSON MIGRGELESTROMIGS