2SB772
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R213-016,E
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
DC IC -3 A
Collector Current Pulse ICP -7 A
Base Current IB -0.6 A
TO-92NL 0.5 W
Collector Dissipation (Ta=25℃) TO-251/TO-252/
TO-126/TO-126C
PC 1 W
Junction Temperature TJ +150
℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -40 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -30 V
Emitter-Base Breakdown Voltage BVEBO I
E=-100μA, IC=0 -5 V
Collector Cut-Off Current ICBO V
CB=-30V ,IE=0 -1000 nA
Collector Cut-Off Current ICEO V
CE=-30V ,IB=0 -1000 nA
Emitter Cut-Off Current IEBO V
EB=-3V, IC=0 -1000 nA
DC Current Gain(Note 1) hFE1
hFE2
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-2A, IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT V
CE=-5V, IC=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V, IE=0,f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100 ~ 200 160 ~ 320 200 ~ 400