UNISONIC TECHNOLOGIES CO., LTD
2SB772
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882
Lead Free:1 2SB772L
Halogen Free: 2SB772G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SB772-x-T60-K 2SB772L-x-T60-K 2SB772G-x-T60-K TO-126 E C B Bulk
2SB772-x-T6C-K 2SB772L-x-T6C-K 2SB772G-x-T6C-K TO-126C E C B Bulk
2SB772-x-TM3-T 2SB772L-x-TM3-T 2SB772G-x-TM3-T TO-251 B C E Tube
2SB772-x-TN3-R 2SB772L-x-TN3-R 2SB772G-x-TN3-R TO-252 B C E Tape Reel
2SB772-x-T9N-B 2SB772L-x-T9N-B 2SB772G-x-T9N-B TO-92NL E C B Tape Box
2SB772-x-T9N-K 2SB772L-x-T9N-K 2SB772G-x-T9N-K TO-92NL E C B Bulk
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2SB772
PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta = 25)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
DC IC -3 A
Collector Current Pulse ICP -7 A
Base Current IB -0.6 A
TO-92NL 0.5 W
Collector Dissipation (Ta=25) TO-251/TO-252/
TO-126/TO-126C
PC 1 W
Junction Temperature TJ +150
Storage Temperature TSTG -55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -40 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -30 V
Emitter-Base Breakdown Voltage BVEBO I
E=-100μA, IC=0 -5 V
Collector Cut-Off Current ICBO V
CB=-30V ,IE=0 -1000 nA
Collector Cut-Off Current ICEO V
CE=-30V ,IB=0 -1000 nA
Emitter Cut-Off Current IEBO V
EB=-3V, IC=0 -1000 nA
DC Current Gain(Note 1) hFE1
hFE2
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-2A, IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT V
CE=-5V, IC=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V, IE=0,f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100 ~ 200 160 ~ 320 200 ~ 400
2SB772
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
Static Characteristics
-Collector-Emitter voltage (V)
-Collector Current, Ic (A)
04 812 1620
0
0.4
0.8
1.2
1.6
Case Temperature, Tc ()
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB=7mA
-IB=8mA
-IB=9mA
Derating Curve of Safe Operating Areas
- Ic Derating (%)
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
Case Temperature, Tc ()
200150100500-50
Power Derating
Power Dissipation(W)
0
4
8
12
Collector Output Capacitance
-Collector-Base Voltage(v)
Output Capacitance(pF)
10 010-1 10 -2 10-3
101
102
103
100
IE=0
f=1MHz
Current Gain-
Bandwidth Product
Current Gain-
Bandwidth Product, fT(MHz)
101
102
103
100
VCE=5V
Collector-Emitter Voltage
-Collector Current, Ic (A)
Safe Operating Area
Ic(max),DC
Ic(max),Pulse
10mS
1mS
0.1mS
Collector Current, Ic (A)
10 -2 10-1 10 010 1
10 -2
10-1
10 0
101
10 010110 2
IB=8mAIB=8mA
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2SB772
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
DC Current Gain
-Collector Current, Ic (mA) -Collector Current, Ic (mA)
Saturation Voltage
DC Current Gain, hFE
101
102
103
100
-Saturation Voltage (mV)
VCE=-2V
VCE(SAT)
VBE(SAT)
100101102103104100101102103104
100
101
102
103
104
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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