MJW3281AG - ON SEMICONDUCTOR

March, 2010 − Rev. 4

1Publication Order Number:

MJW3281A/D

MJW3281A (NPN)

MJW1302A (PNP)

Complementary NPN-PNP

Silicon Power Bipolar

Transistors

The MJW3281A and MJW1302A are PowerBaset power

transistors for high power audio, disk head positioners and other linear

applications.

Features

•Designed for 100 W Audio Frequency

•Gain Complementary:

Gain Linearity from 100 mA to 7 A

hFE = 45 (Min) @ IC = 8 A

•Low Harmonic Distortion

•High Safe Operation Area − 1 A/100 V @ 1 Second

•High fT − 30 MHz Typical

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 230 Vdc

Collector−Base Voltage VCBO 230 Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector−Emitter Voltage − 1.5 V VCEX 230 Vdc

Collector Current − Continuous

Collector Current − Peak (Note 1)

IC15

Adc

Base Current − Continuous IB1.5 Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

PD200

1.43

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg − 65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJW3281A TO−247

TO−247

CASE 340L

30 Units/Rail

15 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

230 VOLTS 200 WATTS

MARKING DIAGRAM

MJWxxxxA

AYWWG

xxxx = 3281 or 1302

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MJW1302A TO−247 30 Units/Rail

1 BASE

2 COLLECTOR

3 EMITTER

http://onsemi.com

MJW1302AG TO−247

(Pb−Free)

30 Units/Rail

MJW3281AG TO−247

(Pb−Free)

30 Units/Rail

MJW3281A (NPN) MJW1302A (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus) 230 − −

Vdc

Collector Cutoff Current

(VCB = 230 Vdc, IE = 0)

ICBO

− − 50

mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

−−5

mAdc

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non−repetitive)

(VCE = 100 Vdc, t = 1 s (non−repetitive)

IS/b 4

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 7 Adc, VCE = 5 Vdc)

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 15 Adc, VCE = 5 Vdc)

hFE 50

125

−

115

−

200

−

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

VCE(sat)

−0.4 2

Vdc

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

−−2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

−30 −

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

− − 600

MJW3281A (NPN) MJW1302A (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

f, CURRENT BANDWIDTH PRODUCT (MHz)

PNP MJW1302A

f, CURRENT BANDWIDTH PRODUCT (MHz)

NPN MJW3281A

IC, COLLECTOR CURRENT (AMPS)

0.1 1.0 10

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V

hFE , DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

hFE , DC CURRENT GAIN

hFE

, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

PNP MJW1302A NPN MJW3281A

hFE

, DC CURRENT GAIN

PNP MJW1302A NPN MJW3281A

1000

100

101.00.1

TJ = 100°C 25°C

-25°C

VCE = 20 V

1000

100

100101.00.1

TJ = 100°C

25°C

-25°C

VCE = 20 V

100

1000

100

100101.00.1

TJ = 100°C

25°C

-25°C

VCE = 5 V

1000

100

100101.00.1

TJ = 100°C

25°C

-25°C

VCE = 5 V

MJW3281A (NPN) MJW1302A (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

IC, COLLECTOR CURRENT (A)

PNP MJW1302A NPN MJW3281A

5.0

05.0010152025

5.00101520

5.0

1.5 A

1 A

0.5 A

IB = 2 A

TJ = 25°C

1.5 A

1 A

0.5 A

IB = 2 A

TJ = 25°C

Figure 9. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

SATURATION VOLTAGE (VOLTS)

Figure 10. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

SATURATION VOLTAGE (VOLTS)

Figure 11. Typical Base−Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

VBE(on), BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Typical Base−Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

VBE(on), BASE-EMITTER VOLTAGE (VOLTS)

PNP MJW1302A NPN MJW3281A

3.0

2.5

2.0

1.5

1.0

0.5

100101.00.1

2.5

2.0

1.5

1.0

100101.00.1

0.5

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

1.0

0.1

100101.00.1

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

1.0

0.1

100101.00.1

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

MJW3281A (NPN) MJW1302A (PNP)

http://onsemi.com

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR EMITTER (VOLTS)

Figure 14. Active Region Safe Operating Area

PNP MJW1302A NPN MJW3281A

100

1.0

0.1

1000101.0 100

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR EMITTER (VOLTS)

100

1.0

0.1

1000101.0 100

IC, COLLECTOR CURRENT (AMPS)

100 mSec

10 mSec

1 Sec

100 mSec

10 mSec

1 Sec

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 13 and 14 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

Figure 15. MJW1302A Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Figure 16. MJW3281A Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

10000

1000

100

100101.00.1

10000

1000

100

100101.00.1

TJ = 25°C

ftest = 1 MHz

Cib

Cob

TJ = 25°C

ftest = 1 MHz

Cib

Cob

PNP MJW1302A NPN MJW3281A

TYPICAL CHARACTERISTICS

MJW3281A (NPN) MJW1302A (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE E

0.25 (0.010) MYQ S

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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MJW3281A/D

PowerBase is a trademark of Semiconductor Components Industries, LLC.

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