TN2435 TN2435 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-243AA* Die** 350V 6.0 1.0A TN2435N8 TN2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels. ** Die in wafer form. Features Low Threshold DMOS Technology High input impedance These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Low input capacitance Fast switching speeds Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces Solid state relays Package Options Power Management Analog switches Ringers Telecom switches D G D S Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* TO-243AA (SOT-89) -55C to +150C 300C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 08/02/99 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and other Supertex products, refer to the Supertex 1998 Databook. 1 TN2435 Thermal Characteristics Package ID (continuous)* TO-243AA 365mA ID (pulsed) Power Dissipation @ TA = 25C 1.6W 1.8A * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. jc C/W ja C/W 15 78 IDR* IDRM 365mA 1.8A Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to Source ON-State Resistance Typ Max -5.5 100 10 1.0 0.5 1.0 A 15.0 10.0 6.0 1.7 Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Unit V V mV/C nA A mA %/C m RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Min 350 0.8 125 125 25 8 5 10 28 10 200 70 25 20 20 40 30 1.5 300 pF Conditions VGS = 0V, ID = 250A VGS = VDS, ID= 1.0mA VGS = VDS, ID= 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 150mA VGS = 4.5V, ID = 250mA VGS = 10V, ID = 750mA VGS = 10V, ID = 750mA VDS = 25V, ID = 350mA VGS = 0V, VDS = 25V f = 1.0MHz ns VDD = 25V, ID = 750mA RGEN = 25 V ns VGS = 0V, ISD = 750mA VGS = 0V, ISD = 750mA Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 TN2435 Typical Performance Curves Output Characteristics Saturation Characteristics 3.0 2.0 VGS = 10V 8V 6V 2.0 VGS = 10V 8V 6V 5V 1.6 ID (Amperes) ID (Amperes) 2.5 5V 1.5 4V 4V 1.2 3V 0.8 1.0 3V 0.5 2.5V 0.4 2.5V 0 0.0 0 10 20 30 40 0 50 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 1.0 2.0 V DS =15V TO-243AA T A =-55C 1.5 PD (Watts) GFS (siemens) 0.8 0.6 T A =25C 1.0 0.4 T A =125C 0.5 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0 25 50 ID (Amperes) 100 125 150 TC (C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 75 TO-243AA (DC) 0.1 0.01 TO-243AA P D = 1.6W T C = 25C 0.8 0.6 0.4 0.2 T A =25C 0 0.001 0.001 1 10 100 1000 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 TN2435 Typical Performance Curves On Resistance vs. Drain Current BVDSS Variation with Temperature 1.2 20 1.0 VGS = 4.5V VGS = 3V 16 1.1 RDS(ON) (ohms) BVDSS (Normalized) BV @ 250A 12 8 0.9 VGS = 10V 4 0.8 -50 0 50 100 0 0.0 150 0.5 1.0 1.5 2.0 2.5 TJ (C) ID (Amperes) Transfer Characteristics VGS(TH) and RDS(ON) w/ Temperature 2.0 3.0 1.4 2.4 1.2 2.0 ID (Amperes) VGS(th) (normalized) TA = -55C 1.6 TA = 150C 1.2 0.8 VGS(th) @ 1mA 1.0 1.6 0.8 1.2 0.6 0.4 0.0 0 2 4 6 8 0.4 -50 10 0.8 RDS(ON) @ 10V, 0.75A VDS = 25V 0 50 RDS(ON) (normalized) TA = 25C 100 VGS (Volts) TJ (C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 0.4 150 10 300 ID = 365mA f = 1MHz 8 VDS=10V 150 VGS (volts) C (picofarads) 225 CISS 6 VDS=40V 4 525pF 75 2 COSS 150pF CRSS 0 0 10 20 30 40 0 0.0 50 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (Volts) 08/02/99 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com VF24 Die Specifications VF24 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF24 55 55 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 1.5 Au Al-Si 5x7 Au 1.5 Epoxy Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional. 3. Al-Cu-Si is used for higher operating current densities. Bond pad size represents smaller gate pad. 4. Bond wire size and material depends on AuTCB, TSB or Al USB. 5. Soft solder or organic die attach methods may be used with appropriate backmetal option. CH06F SOT-23 K1 TO-39 N2 TO-92 N3 SOT-89 N8 Die ND * VF25 * VF25 *6 VF01 Device Number BVDSS min (V) RDS(ON) max () CISS typ (pf) VGS(th) max (V) TN2501 18 2.5 70 1.0 TN0702 20 1.3 130 1.0 * TN0604 40 0.75 140 1.6 * TN2504 40 1.0 70 1.6 TN0104 40 1.8 50 1.6 * TN0606 60 1.5 100 2.0 * TN0606 60 1.5 100 2.0 * TN2106 60 2.5 45 2.0 2N6660 60 3.0 50 2.0 TN0106 60 3.0 50 2.0 * VN0606 60 3.0 50 2.0 *3 VN0808 80 4.0 50 2.0 *3 2N6661 90 4.0 50 2.0 TN0610 100 1.5 100 2.0 TN2510 100 1.5 70 1.6 TN0110 100 3.0 50 2.0 * VN1206 120 6.0 125 2.0 *3 TN0620 200 6.0 110 1.6 * TN2524 240 6.0 65 2.0 VN2406 240 6.0 125 2.0 TN2124 240 10.0 38 1.8 VN2410 240 10.0 125 2.0 TN2425 250 3.5 105 0.8 TN5325 250 7.0 70 2.0 * TN2130 300 25.0 35 2.4 * TN5335 350 15.0 65 2.0 * VN3515 350 15.0 110 1.8 TN2435 350 6.0 2004 0.85 * VF24 TN2535 350 10.0 125 2.0 * VF25 TN2640 400 5.0 180 2.0 * *2 VF26 TN2540 400 12.0 95 2.0 * * VF25 VN4012 400 12.0 110 1.8 *3 * Quad1 *6 VF06 * VF21 *2 *2 * VF06 * VF25 VF01 * VF25 * VF24 *3 * *3 * * VF21 * *3 http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (1 of 2) [7/20/2001 12:41:17 PM] CH06F Add package suffix for complete part number, e.g., TN2640N3 is TN2640 in a TO-92 package. Notes: 1. Package options are defined on individual data sheets. 2. No package suffix required. 3. Use package suffix "L" instead of N3. 4. Rated at Maximum Value. 5. Rated at Minimum Value. 6. Not recommended for new designs. [Home] http://www.supertex.com/Products/Selector_Guides/CH06A_Table/ch06a_table.htm (2 of 2) [7/20/2001 12:41:17 PM]