IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D * Halogen-free According to IEC 61249-2-21 Definition * Surface Mount * Available in Tape and Reel * Dynamic dV/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Compliant to RoHS Directive 2002/95/EC DESCRIPTION G G S D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL210-GE3 SiHFL210TR-GE3a IRFL210PbF IRFL210TRPbFa SiHFL210-E3 SiHFL210T-E3a IRFL210 IRFL210TRa SiHFL210 SiHFL210Ta Lead (Pb)-free SnPb Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 C TC = 100 C Currenta ID IDM V 0.96 0.6 A 7.7 Linear Derating Factor 0.025 Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb UNIT W/C EAS 50 Currenta IAR 0.96 A Repetitive Avalanche Energya EAR 0.31 mJ Repetitive Avalanche mJ * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91193 S10-1257-Rev. C, 31-May-10 www.vishay.com 1 IRFL210, SiHFL210 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL Maximum Power Dissipation TC = 25 C Maximum Power Dissipation (PCB Mount)e TA = 25 C Operating Junction and Storage Temperature Range UNIT 3.1 PD Peak Diode Recovery dV/dtc Soldering Recommendations (Peak Temperature) LIMIT W 2.0 dV/dt 5.0 TJ, Tstg - 55 to + 150 V/ns C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 81 mH, RG = 25 , IAS = 0.96 A (see fig. 12). c. ISD 3.3 A, dI/dt 70 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 60 UNIT C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 200 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.30 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = 10 V ID = 0.58 Ab VDS = 50 V, ID = 0.58 A A - - 1.5 0.51 - - S - 140 - - 53 - - 15 - - - 8.2 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 1.8 Gate-Drain Charge Qgd - - 4.5 Turn-On Delay Time td(on) - 8.2 - tr - 17 - - 14 - - 8.9 - - 4.0 - - 6.0 - Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 3.3 A, VDS = 160 V, see fig. 6 and 13b VDD = 100 V, ID = 3.3 A, Rg = 24 , RD = 30 , see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S www.vishay.com 2 Document Number: 91193 S10-1257-Rev. C, 31-May-10 IRFL210, SiHFL210 Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - - 0.96 S - - 7.7 TJ = 25 C, IS = 0.96 A, VGS = 0 Vb - - 2.0 - 150 310 ns - 0.60 1.4 C Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current MOSFET symbol showing the integral reverse p - n junction diode IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton D A G TJ = 25 C, IF = 3.3 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 100 10-1 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 25 C 10-1 10-2 20 s Pulse Width TC = 25 C 100 10-1 100 4.5 V 10-1 20 s Pulse Width TC = 150 C 100 10-1 91193_02 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C Document Number: 91193 S10-1257-Rev. C, 31-May-10 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) Top 5 VGS, Gate-to-Source Voltage (V) 91193_03 Fig. 1 - Typical Output Characteristics, TC = 25 C VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 20 s Pulse Width VDS = 50 V 4 101 VDS, Drain-to-Source Voltage (V) 91193_01 150 C 100 91193_04 3.5 ID = 3.3 A 3.0 VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFL210, SiHFL210 Vishay Siliconix 300 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ISD, Reverse Drain Current (A) Capacitance (pF) 250 101 200 Ciss 150 Coss 100 Crss 50 0 100 0.8 VDS = 160 V VDS = 40 V 12 8 4 For test circuit see figure 13 0 0 91193_06 2 4 6 8 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 2 10 5 100 s 2 1 1 ms 5 2 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 QG, Total Gate Charge (nC) 2.0 Operation in this area limited by RDS(on) 5 VDS = 100 V 1.6 VSD, Source-to-Drain Voltage (V) 102 ID = 3.3 A 16 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VGS = 0 V 91193_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 25 C 10-1 0.4 101 VDS, Drain-to-Source Voltage (V) 91193_05 150 C 100 91193_08 2 5 10 ms 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91193 S10-1257-Rev. C, 31-May-10 IRFL210, SiHFL210 Vishay Siliconix RD VDS VGS 1.0 + - VDD 10 V 0.8 ID, Drain Current (A) D.U.T. Rg Pulse width 1 s Duty factor 0.1 % 0.6 Fig. 10a - Switching Time Test Circuit 0.4 VDS 0.2 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (C) 91193_09 10 % VGS td(on) td(off) tf tr Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 102 0 - 0.5 10 1 0.2 0.1 0.05 0.02 PDM 0.01 Single Pulse (Thermal Response) t1 0.1 10-2 10-5 91193_11 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10 102 103 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91193 S10-1257-Rev. C, 31-May-10 www.vishay.com 5 IRFL210, SiHFL210 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 tp IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) 120 ID 0.43 A 0.61 A Bottom 0.90 A Top 100 80 60 40 20 0 VDD = 50 V 25 91193_12C 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG VGS 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91193 S10-1257-Rev. C, 31-May-10 IRFL210, SiHFL210 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91193. Document Number: 91193 S10-1257-Rev. C, 31-May-10 www.vishay.com 7 Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. Document Number: 91363 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000