FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. * Q1: N-Channel 9.3A, 30V RDS(on) = 18 m @ V GS = 10V RDS(on) = 23 m @ V GS = 4.5V * Applications Q2: P-Channel -5.6A, -20V * DC/DC converter RDS(on) = 46 m @ V GS = -4.5V RDS(on) = 63 m @ V GS = -2.5V * Power management * Load switch * Battery protection DD DD DD Q2 DD 5 4 6 3 Q1 2 G S2 G S1 S 1 SO-8 SO-8 S S G Absolute Maximum Ratings Symbol Drain-Source Voltage Gate-Source Voltage ID Drain Current - Continuous - Pulsed Power Dissipation for Single Operation PD (Note 1a) 8 1 Q1 Q2 Units 30 -20 20 9.3 20 8 -5.6 -20 V V A 2.5 1.2 1 -55 to +150 W (Note 1a) 50 C/W (Note 1) 25 C/W (Note 1a) (Note 1b) (Note 1c) TJ , TSTG 2 TA = 25C unless otherwise noted Parameter V DSS V GSS 7 Operating and Storage Junction Temperature Range C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4501H FDS4501H 13" 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W) FDS4501H May 2001 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BV DSS BV DSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics V GS = 0 V, ID = 250 A V GS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C V DS = 24 V, V GS = 0 V V DS = -16 V, V GS = 0 V V GS = +20 V, V DS = 0 V V GS = +8 V, V DS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 -20 V DS = V GS , ID = 250 A V DS = V GS , ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C V GS = 10 V, ID = 9.3 A V GS = 10 V, ID = 9.3 A, TJ = 125C V GS = 4.5 V, ID = 7.6 A V GS = -4.5 V, ID = -5.6 A V GS = -4.5 V, ID = -5.6 A, TJ = 125C V GS = -2.5 V, ID = -5.0 A V GS = 10 V, V DS = 5 V V GS = -4.5 V, V DS = -5 V V DS = 5 V, ID = 9.3 A V DS = 5 V, ID = -5.6 A Q1 Q2 Q1 Q2 Q1 1 -0.4 V DS = 10 V, V GS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 V 24 -13 mV/C 1 -1 +100 +100 A 3 -1.5 V nA (Note 2) V GS(th) Gate Threshold Voltage V GS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance Q2 Q1 Q2 Q1 Q2 1.6 -0.7 -4 3 14 21 17 36 49 47 20 -20 mV/C 18 29 23 46 80 63 m A 28 16 S 1958 1312 424 240 182 106 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pF pF FDS4501H Rev C(W) FDS4501H Electrical Characteristics Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Gate-Drain Charge Q1 V DD = 15 V, ID = 1 A, V GS = 10V, RGEN = 6 Q1 V DD = -10 V, ID = -1 A, V GS = -4.5V, RGEN = 6 Q1 V DS = 15 V, ID = 9.3 A, V GS = 4.5 V Q2 V DS = 15 V, ID = -2.4 A,V GS = -4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 15 15 5 15 38 40 10 25 17 13 4 2.5 5 2.0 27 27 10 27 61 64 20 40 27 21 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current V SD Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A (Note 2) Voltage V GS = 0 V, IS = -2.1 A (Note 2) Q1 Q2 Q1 Q2 2.1 -2.1 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b) 105C/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q2 4 15 V GS = -4.5V -2.5V -3.0V 12 3.5 V GS = -1.5V -2.0V 3 9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5 3 -1.5V -2.5V -3.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID , DRAIN CURRENT (A) -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 ID = -1.2 A ID = -2.4A 1.4 V GS = -4.5V 0.12 1.3 0.1 1.2 1.1 0.08 T A = 125o C 1 0.06 0.9 TA = 25oC 0.04 0.8 0.7 -50 -25 0 25 50 75 100 125 150 0.02 1 2 T J, JUNCTION TEMPERATURE (oC) 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 15 V DS = - 5V V GS = 0V o TA = 125 C 25o C 10 12 -55o C 1 T A = 125o C 9 25o C 0.1 6 -55 oC 0.01 3 0.001 0.0001 0 0 0.5 1 1.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q2 5 2000 f = 1MHz V GS = 0 V V DS = -5V ID = -2.4A -10V 4 1600 CISS -15V 3 1200 2 800 1 400 0 COSS CRSS 0 0 2 4 6 8 10 12 14 0 5 Q g, GATE CHARGE (nC) 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 RDS(ON) LIMIT 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE R JA = 125C/W T A = 25C 1ms 10 15 10ms 100ms 1s 1 10 10s DC VGS =-4.5V SINGLE PULSE 0.1 5 R JA = 125 oC/W T A = 25o C 0.01 0 0.1 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q1 21 4 V GS = 10.0V 18 3.5V 6.0V 3.5 3.0V 4.5V 15 V GS = 2.5V 3 12 2.5 9 2 6 2.5V 3.0V 1.5 3.5V 4.5V 3 6.0V 1 0 0 0.5 1 1.5 2 10V 0.5 0 5 V DS, DRAIN TO SOURCE VOLTAGE (V) 10 15 20 25 ID, DIRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.08 ID = 9.3A V GS = 10V ID = 4.7A 1.4 0.06 1.2 0.04 T A = 125o C 1 0.02 0.8 TA = 25 oC 0.6 0 -50 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5 V GS, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE (oC) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 25 100 T A = -55oC V DS = 5.0V V GS = 0V 25o C 10 20 125oC TA = 125o C 1 15 25o C 0.1 10 -55 o C 0.01 5 0.001 0 0.0001 1 1.5 2 2.5 3 V GS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4501H Rev C(W) FDS4501H Typical Characteristics Q1 3000 10 ID = 9.3A V DS = 5V 10 8 f = 1 MHz V GS = 0 V 2500 15V CISS 2000 6 1500 4 1000 COSS 2 500 CRSS 0 0 0 5 10 15 20 25 30 0 5 Q g, GATE CHARGE (nC) 10 15 20 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 30 P(pk), PEAK TRANSIENT POWER (W) 100 100s RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 10s DC V GS = 10V SINGLE PULSE 0.1 o R JA = 125 C/W T A = 25o C 0.01 SINGLE PULSE RJ A = 125C/W TA = 25C 25 20 15 10 5 0 0.01 0.1 1 10 100 0.01 0.1 VDS , DRAIN-SOURCE VOLTAGE (V) 1 10 t1 , TIME (sec) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R JA(t) = r(t) + R JA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 SINGLE PULSE T J - TA = P * RJA(t) Duty Cycle, D = t 1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4501H Rev C(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. Embossed ESD Marking TION NS ATTEE NPRECAUTIO G RV HANDLIN OBSEFO IC R OSTAT ELECTR ITIVE SENS ES DEVIC Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 355x333x40 530x130x83 355x333x40 193x183x80 Max qty per Box 5,000 30,000 8,000 2,000 Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Reel Size Box Dimension (mm) SOIC-8 Unit Orientation Barcode Label Note/Comments Barcode Label Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option F63TNR Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 2500 FSID: FDS9953A SPEC: D/C1: Z 9842AB D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 1680mm minimum or 210 empty pockets January 2001, Rev. C SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 E1 1.60 +/-0.10 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2