MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE | FS10VS-06 OUTLINE DRAWING Dimensions in mm 7. 10.5MAX. . 45. i oye 9.8405 ws! | ee @#10V DRIVE p GATE 2 IN @VDSS cece cece renee teen e een e een e ee eneenes sass BOV 3: SOURCE 4. DRAIN @ DS (ON) (MAX) vortec terete terete tee tenner ee 78MQ @ ID vce rere rece eect rete e eee ener ee eer et asarebenne 10A Integrated Fast Recovery Diode (TYP.) --:--: 55ns TO-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Vbss Drain-source voltage Vas =0V 60 Vv Vass Gate-source voltage Vos = OV +20 Vv Ip Drain current 10 A fiom Drain current (Pulsed) 40 A IDA Avalanche drain current (Pulsed) | l= 100pH 10 A Is Source current 10 A Ism Source current (Pulsed) 40 A Po Maximum power dissipation 30 Ww Teh Channel temperature ~55 ~ +150 ae) Tsig Storage temperature ~55 ~ +150 C _ Weight Typical value 1.2 9g 2 - 822 MITSUBISHI ELECTRIC ELECTRICAL CHARACTERISTICS (ich = 25C) MITSUBISH! Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE Symboi Parameter Test conditions ~ Limits Unit Min, Typ. Max. V (BR) OSS | Drain-source breakdown voltage | ID = 1mA, VDS = OV 60 Vv less Gate leakage current Vas = t20V, Vos = OV _ _ +0.1 HA ipss Drain current Vos = 60V, Vas = OV _ _ 0.1 mA VGS (th) Gate-source threshold voltage ID = mA, VDs = 10V 2.0 3.0 4.0 Vv rps (ON) _| Drain-source on-state resistance | ID = 5A, VGS = 10V _ 58 78 mo Vos (ON) | Drain-source on-state voitage | ID = 5A, VaS = 10V _ 0.29 0.39 v lyts | Forward transfer admittance _| 1D = SA, VOS = 5V = 9.0 ~~ s Ciss input capacitance _ 600 _ pF Coss Output Capacitance Vos = 10V, Vas = OV, F= 1MHz ~ 180 ~ pF Crss Reverse transfer capacitance _ 60 pF td (on) Turn-on delay time _ 18 _ ns n Rise time _ VoD = 30V, Ip = 5A, V6s = 10V. RGEN = Ras = 500 = 22 = ns td (otf) Turn-off delay time 30 = ns tf Fall time _ 17 _ ns Vspb Source-drain voltage Is = 5A, Vas = OV _ 1.0 15 Vv Rih ich-c)_ | Thermal resistance Channel to case ~ ~ 417 CMW tre Reverse recovery time [s = 10A, dis/dt = -100A/us _ 55 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 50 5 3 tw = 10us = 2 2 zy z e Q 30 & 3 E io a & 40 wH 5 Z % 20 5. US Qa z 3 a Z 2 wt c 5 10 6 10-1 a. 5 Te = 25C 3 Single Pulse 2 % 50 100 150 200 23 571009 23 57101 23 57102 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 Vas =20V 10V BV 7V Vas = 20V 10V 8V 6V Toh = 25C ei? ed Teh = 25C Pulse Test rn Pulse Test 4 z 16 =< 8 2 8 5B 42 5 6 ce te 5 5 3 8 3 4 z z < < a 5 4 5 2 0 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 06 0.8 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vbps (V) ate MiTSuBSH 2 = 823 ELECTRIC ON-STATE VOLTAGE VS. MITSUBISHI Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. ELECTRIC GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) tao Teh = 25C Te = 25C Pulse Test Pulse Test f Ee 80 Ke ge De wares 290 22 3 B g 60 Vas = tov O> O 4 i Gy a iw =1 20V 39 Bz 40 Oe oa 26 Zn > 2 20 a 5A or 0 0 0 4 8 12 16 20 35710 23 57101 23 57102 23 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 102 Toh = 25C 7 | Vos = 5V Vos = 10V Pulse Test - Pulse Test 5 < ce 3 2 iu 3 bt ZR 2 z < i cw fig FO 10! ee 7 5 < Z 2 E 3 Te = 25C 98 3 750 o 2 125C 0 400 0 4 8 12 16 20 10 2 345 7101 2 345 7102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 104 102 7 5 7 5 3 z 4 g * & 3 oy 103 we Ze 7 2 ZO 5 = o a 3 g 101 a & 2 = 7 Og 10 ce 3 5 5 S 3 Toh = 25C 3} Tch = 25C 2 voo = ov 2} f = IMHz GS = 103 Ves = 0V 109 AGEN = Res = 500 3 &71009 23 5710123 57102 23 10 62:3: 45/7101 2 345 7102 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ib (A) MITSUBISHI DRAIN-SOURCE ON-STATE RESISTANCE rps (on) (tC) DRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE _V (gr) 08s (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8a) 08s (25C) GATE-SOURCE VOLTAGE Vas (V) 16 12 = Q pe NY wo AO! a Q o ny wa wn 10-1 0.4 GATE-SOQURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Teh = 26C tD = 10A Ves = 10V 0 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) V@s = 10V Ip = 1/210 Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V lo=1mA 60 0 50 100 166 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE = 2th {chc) (C/W) ww anB 2 10 7 5 3 2 SOURCE CURRENT is (A) GATE-SOURCE THRESHOLD VOLTAGE Vs (th) (V} 101 7 5[D=10 3405 0.2 MITSUBISHI! Nch POWER MOSFET FS10VS-06 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Ves = 0V Pulse Test 32 24 To = 125C 16 0 0 0.4 0.8 12 16 2.0 SOURCE-DRAIN VOLTAGE so (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vos = 10V Ip=1mA 4.0 3.0 2.0 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.1 0.05 0.02 D= tw 0.01 Pulse 10-1 10423 5710923 5710223 5710-123 5710023 5710! 23 57102 PULSE WIDTH tw {s) 9 MITSUBISHI ELECTRIC 2 - B25