MCC BC556,B BC557,A,B,C BC558,B omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data TO-92 A E l Case: TO-92, Molded Plastic l Polarity: indicated as above. B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-Base Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 Collector Current(DC) IC Power Dissipation@TA=25oC Pd Power Dissipation@TC=25oC Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature -100 625 5.0 1.5 12 Unit C V V D V mA mW mW/oC W mW/oC G DIMENSIONS RqJA RqJC 200 83.3 Tj, TSTG -55~150 o C/W o C/W o C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC BC556 thru BC558B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -65 -45 -30 -- -- -- -- -- -- -80 -50 -30 -- -- -- -- -- -- -5.0 -5.0 -5.0 -- -- -- -- -- -- -- -- -- 120 120 120 120 180 420 -- -- -- 90 150 270 -- -- -- 170 290 500 120 180 300 -- -- -- 500 800 800 220 460 800 -- -- -- -- --- -0.3 -- -- -1.0 -0.55 -- -0.62 -0.7 -0.7 -0.82 -- -- -- 280 320 360 -- -- -- -- 3.0 6.0 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 Adc) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 V) (IC = -2.0 mAdc, VCE = -5.0 V) (IC = -100 mAdc, VCE = -5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector - Emitter Saturation Voltage (IC = -100mAdc, IB = -5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) VBE(on) -- V V V SMALL-SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) fT BC556 BC557 BC558 Cob MHz www.mccsemi.com pF MCC BC556 thru BC558B BC557/BC558 1.5 -1.0 TA = 25C -0.9 VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 1. Normalized DC Current Gain -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) -1.6 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 1.0 TA = 25C 0 -50 Figure 2. "Saturation" and "On" Voltages -2.0 -0.8 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product www.mccsemi.com MCC BC556 thru BC558B BC556 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance -50 -100 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C -55C to 125C -2.2 Figure 9. Collector Saturation Region 40 VB for VBE 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 12. Current-Gain - Bandwidth Product www.mccsemi.com