Features
l Through Hole Package
l 150oC Junction Temperature
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage BC556
BC557
BC558
VCEO
-65
-45
-30
V
Collector-Base Voltage BC556
BC557
BC558
VCBO
-80
-50
-30
V
Emitter-Base Voltage
VEBO
-5.0 V
Collector Current(DC) I
C
-100 mA
Power Dissipation@TA=25oC
Pd625
5.0
mW
mW/oC
Power Dissipation@TC=25oC
Pd1.5
12
W
mW/oC
Thermal Resistance, Junction to
Ambient Air
200 oC/W
Thermal Resistance, Junction to
Case
83.3 oC/W
Operating & Storage Temperature T
j
, T
STG
-55~150 oC
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
625mW
TO-92
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.175 .185 4.45 4.70
B.175 .185 4.46 4.70
C.500 --- 12.7 ---
D.016 .020 0.41 0.63
E.135 .145 3.43 3.68
G.095 .105 2.42 2.67
A
E
B
C
D
G
DIMENSIONS
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Pin Configuration
Bottom View CB E
R
q
JC
R
q
JA
omponents
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MCC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0) BC556
BC557
BC558
V(BR)CEO –65
–45
–30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = –100 µAdc) BC556
BC557
BC558
V(BR)CBO –80
–50
–30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0) BC556
BC557
BC558
V(BR)EBO –5.0
–5.0
–5.0
—
—
—
—
—
—
V
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
(IC = –2.0 mAdc, VCE = –5.0 V) BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
(IC = –100 mAdc, VCE = –5.0 V) BC557A
BC556B/557B/558B
BC557C
hFE —
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –100mAdc, IB = –5.0 mAdc) VCE(sat) —--- –0.3 V
Base–Emitter Saturation V oltage
(IC = –100 mAdc, IB = –5.0mAdc) VBE(sat) —–1.0—V
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
VBE(on) –0.55
—–0.62
–0.7 –0.7
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556
BC557
BC558
fT—
—
—
280
320
360
—
—
—
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz) Cob —3.0 6.0 pF
MCC
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BC556 thru BC558B
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
–0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–0.6
–0.7
–0.8
–0.9
–1.0
–0.5
0
–0.2
–0.4
–0.1
–0.3
1.6
1.2
2.0
2.8
2.4
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOL TAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOL TAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
1.5
1.0
0.7
0.5
0.3
–0.2 –10 –100
–1.0
TA = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE = –10 V
TA = 25
°
C
–55
°
C to +125
°
C
IC = –100 mA
IC = –20 mA
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC = –200 mAIC = –50 mAIC =
–10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
–0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
–0.5
C, CAP ACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
TA = 25
°
C
Cob
Cib
–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
150
–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
VCE = –10 V
TA = 25
°
C
TA = 25
°
C
1.0
MCC
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BC556 thru BC558B
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
–0.8
–1.0
–0.6
–0.2
–0.4
1.0
2.0
–0.1 –1.0 –10 –200
–0.2
0.2
0.5
–0.2 –1.0 –10 –200
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = –5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
–1.2
–1.6
–2.0
–0.02 –1.0 –10
0–20
–0.1
–0.4
–0.8
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VB, TEMPERA TURE COEFFICIENT (mV/ C)
°θ
–0.2 –2.0 –10 –200
–1.0
TJ = 25
°
C
IC =
–10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = –5.0 V
TA = 25
°
C
0–0.5 –2.0 –5.0 –20 –50 –100
–0.05 –0.2 –0.5 –2.0 –5.0
–100 mA
–20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 –0.5 –5.0 –20 –50 –100
–55
°
C to 125
°
C
θ
VB for VBE
–2.0 –5.0 –20 –50 –100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2 –1.0 –50
2.0 –2.0 –10 –100
100
200
500
50
20
20
10
6.0
4.0
–1.0 –10 –100
VCE = –5.0 V
C, CAP ACITANCE (pF)
f , CURRENT–GAIN – BANDWIDTH PRODUCT
T
–0.5 –5.0 –20
TJ = 25
°
C
Cob
Cib
8.0
–50 mA –200 mA
MCC
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BC556 thru BC558B
